Global Flash Memory Market 2017-2021
About Flash Memory
Flash memory is a non-volatile memory. Dr. Fujio Masuoka invented the flash memory when he worked for Toshiba in the 1980s. Flash memory penetrated the semiconductor market by early 1990s. Flash memory evolved from erasable programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (EEPROM). If considered technically, flash memory is a variant of EEPROM. However, the industry reserves the term EEPROM for byte-level erasable memory and applies the term flash memory to larger block-level erasable memory. Flash memory is a type of non-volatile memory that erases data in units called blocks. A block stored on a flash memory chip must be erased before any form of data is written or programmed to the microchip. Flash memory retains the stored data for an extended period of time even when the flash-equipped device is powered on or off.
Technavio’s analysts forecast the global flash memory market to grow at a CAGR of 11.37% during the period 2017-2021.
Covered in this report
The report covers the present scenario and the growth prospects of the global flash memory market for 2017-2021. To calculate the market size, the report considers the non-volatile flash memory technologies and excludes volatile memory technologies.
The market is divided into the following segments based on geography:
Technavio Announces the Publication of its Research Report – Global Flash Memory Market 2017-2021
Technavio recognizes the following companies as the key players in the global flash memory market: Samsung, Toshiba, Western Digital, and SK Hynix.
Other Prominent Vendors in the market are: ADATA, Cactus, Delkin, Eye-Fi, Hoodman, KINGMAX, Lexar (Micron Consumer Products Group), PNY Technologies, Sony, Starline International Group, Strontium, and Intel.
Commenting on the report, an analyst from Technavio’s team said: “The latest trend gaining momentum in the market is Increasing demand for next-generation memory. The demand for fast, economical, and high scalable memory solutions is increasing exponentially across the globe. This results in the increase in the demand for the next-generation memory solutions such as ferroelectric random access memory (FeRAM), magnetoresistive random access memory (MRAM), and phase-change memory (PCM). These memories are required as the amount of data generated that needs to be stored and efficiently analyzed is increasing exponentially.”
According to the report, one of the major drivers for this market is High demand for rugged and robust storage devices. Rugged devices are meant to be used in harsh environmental conditions. The rugged devices withstand and function at extreme high or low temperatures, without affecting the performance. Attributes like long battery life and being lightweight make them convenient to be integrated into the commercial and industrial segments.
Further, the report states that one of the major factors hindering the growth of this market is Reliability of flash memory. A flash memory goes through many program/erase (P/E) cycles during its lifetime. During each of the P/E cycles, very high electric fields are applied to the tunnel oxide, which needs to operate under such stress conditions. The tunnel oxide is basically a thin oxide and is also responsible for other effects, such as erratic bits and over-programming, which might result in read errors. The performance of the tunnel oxide defines the reliability of the entire memory. It is essential for the vendors to determine the right process for the tunnel oxide creation in terms of thickness, material, growth, defectivity, and interface.
Samsung, Toshiba, Western Digital, SK Hynix, ADATA, Cactus, Delkin, Eye-Fi, Hoodman, KINGMAX, Lexar (Micron Consumer Products Group), PNY Technologies, Sony, Starline International Group, Strontium, and Intel.
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