Global High Power GaN Devices Market Growth 2025-2031

The global High Power GaN Devices market size is predicted to grow from US$ million in 2025 to US$ million in 2031; it is expected to grow at a CAGR of %from 2025 to 2031.

United States market for High Power GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

China market for High Power GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Europe market for High Power GaN Devices is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Global key High Power GaN Devices players cover Infineon, Texas Instruments, Integra Technologies, Qorvo, Wolfspeed, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2024.

LP Information, Inc. (LPI) ' newest research report, the “High Power GaN Devices Industry Forecast” looks at past sales and reviews total world High Power GaN Devices sales in 2024, providing a comprehensive analysis by region and market sector of projected High Power GaN Devices sales for 2025 through 2031. With High Power GaN Devices sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world High Power GaN Devices industry.

This Insight Report provides a comprehensive analysis of the global High Power GaN Devices landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on High Power GaN Devices portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global High Power GaN Devices market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for High Power GaN Devices and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global High Power GaN Devices.

This report presents a comprehensive overview, market shares, and growth opportunities of High Power GaN Devices market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Transistors
Diodes

Segmentation by Application:
Radar
Satellite
Base Station
Inverter
Power Switch
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon
Texas Instruments
Integra Technologies
Qorvo
Wolfspeed
Efficient Power Conversion
GaN Systems
Nexperia
STMicroelectronics
GOHM
Navitas
Power Integrations
Transphorm
Panasonic
GaNPower
Toshiba
Mitsubishi Electric

Key Questions Addressed in this Report

What is the 10-year outlook for the global High Power GaN Devices market?

What factors are driving High Power GaN Devices market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do High Power GaN Devices market opportunities vary by end market size?

How does High Power GaN Devices break out by Type, by Application?

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