Global Power Semiconductor Discrete Devices Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031
Description
According to our (Global Info Research) latest study, the global Power Semiconductor Discrete Devices market size was valued at US$ 31770 million in 2024 and is forecast to a readjusted size of USD 44200 million by 2031 with a CAGR of 4.9% during review period.
Discrete power devices refer to electronic devices with individual functions and functions that cannot be disassembled. According to different chip structures and functions, they can be divided into diodes, triodes, bridge rectifiers, thyristors, etc., and can be divided from the perspective of power dissipation (or rated current) For small signal devices, power devices.
Discrete power devices are electronic devices based on semiconductor materials with fixed single characteristics and functions. The device is mainly composed of a chip, a lead/frame, and a plastic casing. The chip determines device functions, such as rectification, voltage stabilization, switching, protection, etc. The lead/frame realizes the connection between the chip and the external circuit and the heat export. Provide protection for the chip and internal structure, ensure the stable realization of its functions, and are highly related to core performance such as heat dissipation.
The discrete power devices are mainly produced in North America, Europe, Japan, Europe, China mainland, China Taiwan, South Korea and Southeast Asia, etc. The global key players are mainly from Europe, US, Japan, China mainland, and China Taiwan. In 2023, the global top ten players hold a share nearly 55 percent in terms of revenue.
In terms of product segment, the MOSFETs is the largest segment, with a share of 35%. IGBTs now are the second segment, and will be the largest segment in next few years, driven by the demand from electric vehicle (EV), PV and wind power, etc.
In terms of application, the automotive is the largest segment in 2023, holds a share over 35 percent, followed by Industrial Control, with a share about 224.8%.
In next several years, the SiC power devices like SiC SBD, SiC MOSFETs, and automotive grade IGBT will be the fast-growing products.
This report is a detailed and comprehensive analysis for global Power Semiconductor Discrete Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Power Semiconductor Discrete Devices market size and forecasts, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Semiconductor Discrete Devices market size and forecasts by region and country, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Semiconductor Discrete Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Semiconductor Discrete Devices market shares of main players, shipments in revenue ($ Million), sales quantity (Million Pcs), and ASP (US$/Pcs), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Power Semiconductor Discrete Devices
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Power Semiconductor Discrete Devices market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, onsemi, STMicroelectronics, Mitsubishi Electric (Vincotech), Nexperia, Vishay Intertechnology, Toshiba, Fuji Electric, Rohm, Renesas Electronics, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Power Semiconductor Discrete Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Diode
IGBT
MOSFET
Bipolar Transistor (BJT)
Thyristor
Market segment by Application
Automotive
Industrial Control
Consumer Electronics
Communication
Others
Major players covered
Infineon
onsemi
STMicroelectronics
Mitsubishi Electric (Vincotech)
Nexperia
Vishay Intertechnology
Toshiba
Fuji Electric
Rohm
Renesas Electronics
Diodes Incorporated
Littelfuse (IXYS)
Alpha & Omega Semiconductor
Semikron Danfoss
Hitachi Power Semiconductor Device
Microchip
Sanken Electric
Semtech
MagnaChip
Bosch
Texas Instruments
KEC Corporation
Wolfspeed
PANJIT Group
Unisonic Technologies (UTC)
Niko Semiconductor
Hangzhou Silan Microelectronics
Yangzhou Yangjie Electronic Technology
China Resources Microelectronics Limited
Jilin Sino-Microelectronics
StarPower
NCEPOWER
Prisemi
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Zhuzhou CRRC Times Electric
WeEn Semiconductors
Changzhou Galaxy Century Microelectronics
MacMic Science & Technolog
BYD
Hubei TECH Semiconductors
BASiC Semiconductor
Shandong Jingdao Microelectronics
Sanan Optoelectronics
CETC-55
Shenzhen BASiC Semiconductor
Guangdong AccoPower
Qorvo (UnitedSiC)
GE Aerospace
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Power Semiconductor Discrete Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Power Semiconductor Discrete Devices, with price, sales quantity, revenue, and global market share of Power Semiconductor Discrete Devices from 2020 to 2025.
Chapter 3, the Power Semiconductor Discrete Devices competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Power Semiconductor Discrete Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Power Semiconductor Discrete Devices market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Power Semiconductor Discrete Devices.
Chapter 14 and 15, to describe Power Semiconductor Discrete Devices sales channel, distributors, customers, research findings and conclusion.
Discrete power devices refer to electronic devices with individual functions and functions that cannot be disassembled. According to different chip structures and functions, they can be divided into diodes, triodes, bridge rectifiers, thyristors, etc., and can be divided from the perspective of power dissipation (or rated current) For small signal devices, power devices.
Discrete power devices are electronic devices based on semiconductor materials with fixed single characteristics and functions. The device is mainly composed of a chip, a lead/frame, and a plastic casing. The chip determines device functions, such as rectification, voltage stabilization, switching, protection, etc. The lead/frame realizes the connection between the chip and the external circuit and the heat export. Provide protection for the chip and internal structure, ensure the stable realization of its functions, and are highly related to core performance such as heat dissipation.
The discrete power devices are mainly produced in North America, Europe, Japan, Europe, China mainland, China Taiwan, South Korea and Southeast Asia, etc. The global key players are mainly from Europe, US, Japan, China mainland, and China Taiwan. In 2023, the global top ten players hold a share nearly 55 percent in terms of revenue.
In terms of product segment, the MOSFETs is the largest segment, with a share of 35%. IGBTs now are the second segment, and will be the largest segment in next few years, driven by the demand from electric vehicle (EV), PV and wind power, etc.
In terms of application, the automotive is the largest segment in 2023, holds a share over 35 percent, followed by Industrial Control, with a share about 224.8%.
In next several years, the SiC power devices like SiC SBD, SiC MOSFETs, and automotive grade IGBT will be the fast-growing products.
This report is a detailed and comprehensive analysis for global Power Semiconductor Discrete Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Power Semiconductor Discrete Devices market size and forecasts, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Semiconductor Discrete Devices market size and forecasts by region and country, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Semiconductor Discrete Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Semiconductor Discrete Devices market shares of main players, shipments in revenue ($ Million), sales quantity (Million Pcs), and ASP (US$/Pcs), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Power Semiconductor Discrete Devices
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Power Semiconductor Discrete Devices market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, onsemi, STMicroelectronics, Mitsubishi Electric (Vincotech), Nexperia, Vishay Intertechnology, Toshiba, Fuji Electric, Rohm, Renesas Electronics, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Power Semiconductor Discrete Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Diode
IGBT
MOSFET
Bipolar Transistor (BJT)
Thyristor
Market segment by Application
Automotive
Industrial Control
Consumer Electronics
Communication
Others
Major players covered
Infineon
onsemi
STMicroelectronics
Mitsubishi Electric (Vincotech)
Nexperia
Vishay Intertechnology
Toshiba
Fuji Electric
Rohm
Renesas Electronics
Diodes Incorporated
Littelfuse (IXYS)
Alpha & Omega Semiconductor
Semikron Danfoss
Hitachi Power Semiconductor Device
Microchip
Sanken Electric
Semtech
MagnaChip
Bosch
Texas Instruments
KEC Corporation
Wolfspeed
PANJIT Group
Unisonic Technologies (UTC)
Niko Semiconductor
Hangzhou Silan Microelectronics
Yangzhou Yangjie Electronic Technology
China Resources Microelectronics Limited
Jilin Sino-Microelectronics
StarPower
NCEPOWER
Prisemi
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Zhuzhou CRRC Times Electric
WeEn Semiconductors
Changzhou Galaxy Century Microelectronics
MacMic Science & Technolog
BYD
Hubei TECH Semiconductors
BASiC Semiconductor
Shandong Jingdao Microelectronics
Sanan Optoelectronics
CETC-55
Shenzhen BASiC Semiconductor
Guangdong AccoPower
Qorvo (UnitedSiC)
GE Aerospace
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Power Semiconductor Discrete Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Power Semiconductor Discrete Devices, with price, sales quantity, revenue, and global market share of Power Semiconductor Discrete Devices from 2020 to 2025.
Chapter 3, the Power Semiconductor Discrete Devices competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Power Semiconductor Discrete Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Power Semiconductor Discrete Devices market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Power Semiconductor Discrete Devices.
Chapter 14 and 15, to describe Power Semiconductor Discrete Devices sales channel, distributors, customers, research findings and conclusion.
Table of Contents
208 Pages
- 1 Market Overview
- 2 Manufacturers Profiles
- 3 Competitive Environment: Power Semiconductor Discrete Devices by Manufacturer
- 4 Consumption Analysis by Region
- 5 Market Segment by Type
- 6 Market Segment by Application
- 7 North America
- 8 Europe
- 9 Asia-Pacific
- 10 South America
- 11 Middle East & Africa
- 12 Market Dynamics
- 13 Raw Material and Industry Chain
- 14 Shipments by Distribution Channel
- 15 Research Findings and Conclusion
- 16 Appendix
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