Global NAND Flash Memory and DRAM Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031

According to our (Global Info Research) latest study, the global NAND Flash Memory and DRAM market size was valued at US$ 165810 million in 2024 and is forecast to a readjusted size of USD 244360 million by 2031 with a CAGR of 5.8% during review period.

NAND flash memory is a type of non-volatile storage technology that does not require power in order to retain data. It uses floating-gate transistors that are connected in a way that the resulting connection resembles a NANA gate, where several transistors are series connected and a bit line is pulled low only when all word lines are at a high state, hence the name. The technology is used in common storage devices such as flash drives, solid-state drives and memory cards.

Dynamic random-access memory is a type of random access semiconductor memory that stores each bit of data in a memory cell consisting of a tiny capacitor and a transistor, both typically based on metal-oxide-semiconductor technology.

China is the largest NAND Flash Memory and DRAM market with about 27% market share. Korea is follower, accounting for about 24% market share.

The key players are Samsung, Micron, SK Hynix, Kioxia Holdings Corporation, Western Digital, Intel, Nanya, Winbond etc. Top 3 companies occupied about 73% market share.

This report is a detailed and comprehensive analysis for global NAND Flash Memory and DRAM market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.

Key Features:

Global NAND Flash Memory and DRAM market size and forecasts, in consumption value ($ Million), sales quantity (M Units), and average selling prices (US$/Unit), 2020-2031

Global NAND Flash Memory and DRAM market size and forecasts by region and country, in consumption value ($ Million), sales quantity (M Units), and average selling prices (US$/Unit), 2020-2031

Global NAND Flash Memory and DRAM market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (M Units), and average selling prices (US$/Unit), 2020-2031

Global NAND Flash Memory and DRAM market shares of main players, shipments in revenue ($ Million), sales quantity (M Units), and ASP (US$/Unit), 2020-2025

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for NAND Flash Memory and DRAM

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global NAND Flash Memory and DRAM market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Samsung, Micron, SK Hynix, Kioxia Holdings Corporation, Western Digital, Intel, Nanya, Winbond, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market Segmentation

NAND Flash Memory and DRAM market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
NAND Flash Memory
DRAM

Market segment by Application
Smartphone
PC
SSD
Digital TV
Others

Major players covered
Samsung
Micron
SK Hynix
Kioxia Holdings Corporation
Western Digital
Intel
Nanya
Winbond

Market segment by region, regional analysis covers

North America (United States, Canada, and Mexico)

Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)

Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)

South America (Brazil, Argentina, Colombia, and Rest of South America)

Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe NAND Flash Memory and DRAM product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of NAND Flash Memory and DRAM, with price, sales quantity, revenue, and global market share of NAND Flash Memory and DRAM from 2020 to 2025.

Chapter 3, the NAND Flash Memory and DRAM competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the NAND Flash Memory and DRAM breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.

Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and NAND Flash Memory and DRAM market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.

Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of NAND Flash Memory and DRAM.

Chapter 14 and 15, to describe NAND Flash Memory and DRAM sales channel, distributors, customers, research findings and conclusion.