Global GaN Field-Effect Transistors Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031
Description
According to our (Global Info Research) latest study, the global GaN Field-Effect Transistors market size was valued at US$ 3764 million in 2024 and is forecast to a readjusted size of USD 20640 million by 2031 with a CAGR of 27.8% during review period.
GaN Field-Effect Transistors is a type of field effect transistor based on gallium nitride and aluminum gallium nitride. Due to the good heat dissipation performance, high breakdown electric field and high saturation speed of GaN materials, GaN FETs have great application prospects in high-power high-frequency energy conversion and high-frequency microwave communication.
The Gallium Nitride (GaN) Field-Effect Transistors (FETs) market is driven by several factors that highlight the advantages of GaN technology in power electronics and RF applications. GaN FETs are semiconductor devices that use GaN as the material for the transistor"s channel, offering higher performance, efficiency, and power density compared to traditional silicon-based transistors. Here are some key drivers for the GaN Field-Effect Transistors market:
High Electron Mobility: GaN has a high electron mobility, allowing for faster switching speeds and higher frequency operation, making GaN FETs suitable for high-speed and RF applications.
High Power Density: GaN FETs can handle higher voltages and currents, enabling higher power density and smaller form factors for power electronics systems.
Efficiency Improvement: GaN FETs have lower conduction and switching losses compared to silicon-based devices, leading to improved overall efficiency in power conversion applications.
RF and Microwave Applications: GaN FETs offer superior RF performance with higher gain, higher power output, and wider frequency range, making them ideal for wireless communication, radar systems, and satellite communication.
5G Technology: The demand for higher data rates and faster communication speeds in 5G networks drives the adoption of GaN FETs in RF power amplifiers and other 5G infrastructure components.
Wireless Power Transmission: GaN FETs are used in wireless power transfer systems, including wireless charging for electric vehicles and consumer electronics.
Aerospace and Defense: The aerospace and defense industries utilize GaN FETs for high-power radar systems, electronic warfare, and communication systems due to their high power handling and ruggedness.
Automotive Industry: GaN FETs are increasingly adopted in electric and hybrid vehicles for efficient power conversion and energy management in charging systems and powertrains.
Renewable Energy: GaN FETs play a role in solar inverters and wind turbine converters, enhancing energy conversion efficiency and grid integration.
Data Centers: GaN FETs are used in data center power supplies to improve efficiency and reduce energy consumption, contributing to green data center initiatives.
Compact and Lightweight Design: The high power density and efficiency of GaN FETs allow for smaller, lighter, and more compact power electronic systems.
Power Electronics Miniaturization: GaN FETs enable the miniaturization of power electronic components, benefiting applications like portable electronics, robotics, and drones.
High-Temperature Operation: GaN devices can operate at higher temperatures compared to traditional silicon-based devices, expanding their range of industrial and high-temperature applications.
Transition from Silicon to GaN: Industries are transitioning from silicon-based technology to GaN technology to take advantage of its superior performance characteristics.
Government Investments: Government initiatives to support innovation and advancements in semiconductor technology contribute to the growth of the GaN FETs market.
Research and Development: Ongoing R&D efforts to enhance GaN material properties and transistor designs lead to improved GaN FET performance and wider adoption.
This report is a detailed and comprehensive analysis for global GaN Field-Effect Transistors market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global GaN Field-Effect Transistors market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Field-Effect Transistors market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Field-Effect Transistors market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Field-Effect Transistors market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for GaN Field-Effect Transistors
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global GaN Field-Effect Transistors market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon Technologies, Texas Instruments, Nexperia, Renesas Electronics, NXP, Transphorm, Panasonic Electronic, GaN Systems, EPC, pSemi (Murata), etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
GaN Field-Effect Transistors market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
HFET
MODFET
Others
Market segment by Application
Consumer Electronics
Automotive
Communication
Charging Equipment
Others
Major players covered
Infineon Technologies
Texas Instruments
Nexperia
Renesas Electronics
NXP
Transphorm
Panasonic Electronic
GaN Systems
EPC
pSemi (Murata)
Toshiba
Qorvo
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe GaN Field-Effect Transistors product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of GaN Field-Effect Transistors, with price, sales quantity, revenue, and global market share of GaN Field-Effect Transistors from 2020 to 2025.
Chapter 3, the GaN Field-Effect Transistors competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the GaN Field-Effect Transistors breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and GaN Field-Effect Transistors market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of GaN Field-Effect Transistors.
Chapter 14 and 15, to describe GaN Field-Effect Transistors sales channel, distributors, customers, research findings and conclusion.
GaN Field-Effect Transistors is a type of field effect transistor based on gallium nitride and aluminum gallium nitride. Due to the good heat dissipation performance, high breakdown electric field and high saturation speed of GaN materials, GaN FETs have great application prospects in high-power high-frequency energy conversion and high-frequency microwave communication.
The Gallium Nitride (GaN) Field-Effect Transistors (FETs) market is driven by several factors that highlight the advantages of GaN technology in power electronics and RF applications. GaN FETs are semiconductor devices that use GaN as the material for the transistor"s channel, offering higher performance, efficiency, and power density compared to traditional silicon-based transistors. Here are some key drivers for the GaN Field-Effect Transistors market:
High Electron Mobility: GaN has a high electron mobility, allowing for faster switching speeds and higher frequency operation, making GaN FETs suitable for high-speed and RF applications.
High Power Density: GaN FETs can handle higher voltages and currents, enabling higher power density and smaller form factors for power electronics systems.
Efficiency Improvement: GaN FETs have lower conduction and switching losses compared to silicon-based devices, leading to improved overall efficiency in power conversion applications.
RF and Microwave Applications: GaN FETs offer superior RF performance with higher gain, higher power output, and wider frequency range, making them ideal for wireless communication, radar systems, and satellite communication.
5G Technology: The demand for higher data rates and faster communication speeds in 5G networks drives the adoption of GaN FETs in RF power amplifiers and other 5G infrastructure components.
Wireless Power Transmission: GaN FETs are used in wireless power transfer systems, including wireless charging for electric vehicles and consumer electronics.
Aerospace and Defense: The aerospace and defense industries utilize GaN FETs for high-power radar systems, electronic warfare, and communication systems due to their high power handling and ruggedness.
Automotive Industry: GaN FETs are increasingly adopted in electric and hybrid vehicles for efficient power conversion and energy management in charging systems and powertrains.
Renewable Energy: GaN FETs play a role in solar inverters and wind turbine converters, enhancing energy conversion efficiency and grid integration.
Data Centers: GaN FETs are used in data center power supplies to improve efficiency and reduce energy consumption, contributing to green data center initiatives.
Compact and Lightweight Design: The high power density and efficiency of GaN FETs allow for smaller, lighter, and more compact power electronic systems.
Power Electronics Miniaturization: GaN FETs enable the miniaturization of power electronic components, benefiting applications like portable electronics, robotics, and drones.
High-Temperature Operation: GaN devices can operate at higher temperatures compared to traditional silicon-based devices, expanding their range of industrial and high-temperature applications.
Transition from Silicon to GaN: Industries are transitioning from silicon-based technology to GaN technology to take advantage of its superior performance characteristics.
Government Investments: Government initiatives to support innovation and advancements in semiconductor technology contribute to the growth of the GaN FETs market.
Research and Development: Ongoing R&D efforts to enhance GaN material properties and transistor designs lead to improved GaN FET performance and wider adoption.
This report is a detailed and comprehensive analysis for global GaN Field-Effect Transistors market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global GaN Field-Effect Transistors market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Field-Effect Transistors market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Field-Effect Transistors market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Field-Effect Transistors market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for GaN Field-Effect Transistors
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global GaN Field-Effect Transistors market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon Technologies, Texas Instruments, Nexperia, Renesas Electronics, NXP, Transphorm, Panasonic Electronic, GaN Systems, EPC, pSemi (Murata), etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
GaN Field-Effect Transistors market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
HFET
MODFET
Others
Market segment by Application
Consumer Electronics
Automotive
Communication
Charging Equipment
Others
Major players covered
Infineon Technologies
Texas Instruments
Nexperia
Renesas Electronics
NXP
Transphorm
Panasonic Electronic
GaN Systems
EPC
pSemi (Murata)
Toshiba
Qorvo
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe GaN Field-Effect Transistors product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of GaN Field-Effect Transistors, with price, sales quantity, revenue, and global market share of GaN Field-Effect Transistors from 2020 to 2025.
Chapter 3, the GaN Field-Effect Transistors competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the GaN Field-Effect Transistors breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and GaN Field-Effect Transistors market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of GaN Field-Effect Transistors.
Chapter 14 and 15, to describe GaN Field-Effect Transistors sales channel, distributors, customers, research findings and conclusion.
Table of Contents
112 Pages
- 1 Market Overview
- 2 Manufacturers Profiles
- 3 Competitive Environment: GaN Field-Effect Transistors by Manufacturer
- 4 Consumption Analysis by Region
- 5 Market Segment by Type
- 6 Market Segment by Application
- 7 North America
- 8 Europe
- 9 Asia-Pacific
- 10 South America
- 11 Middle East & Africa
- 12 Market Dynamics
- 13 Raw Material and Industry Chain
- 14 Shipments by Distribution Channel
- 15 Research Findings and Conclusion
- 16 Appendix
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