SiC-On-Insulator and Other Substrates

Global SiC-On-Insulator and Other Substrates Market to Reach US$151.3 Million by 2030

The global market for SiC-On-Insulator and Other Substrates estimated at US$96.0 Million in the year 2024, is expected to reach US$151.3 Million by 2030, growing at a CAGR of 7.9% over the analysis period 2024-2030. Semi-insulating SiC Substrates, one of the segments analyzed in the report, is expected to record a 9.0% CAGR and reach US$110.1 Million by the end of the analysis period. Growth in the Conductive SiC Substrates segment is estimated at 5.1% CAGR over the analysis period.

The U.S. Market is Estimated at US$26.2 Million While China is Forecast to Grow at 12.5% CAGR

The SiC-On-Insulator and Other Substrates market in the U.S. is estimated at US$26.2 Million in the year 2024. China, the world`s second largest economy, is forecast to reach a projected market size of US$32.7 Million by the year 2030 trailing a CAGR of 12.5% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 3.9% and 7.6% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 5.2% CAGR.

Global SiC-On-Insulator and Other Substrates Market – Key Trends & Drivers Summarized

Why Is the Demand for SiC-On-Insulator and Other Substrates Increasing? Understanding Their Growing Role in Semiconductor Applications

The semiconductor industry is witnessing a paradigm shift with the increasing adoption of silicon carbide-on-insulator (SiC-OI) and other advanced substrates, primarily driven by the demand for high-performance electronics, power devices, and next-generation semiconductor components. As industries such as electric vehicles (EVs), telecommunications, aerospace, and renewable energy continue to expand, the need for materials that offer superior thermal conductivity, high voltage resistance, and energy efficiency has intensified. SiC-on-insulator technology provides significant advantages over traditional silicon-based semiconductors by enhancing power efficiency, reducing heat dissipation, and improving device longevity. Additionally, the rising demand for 5G infrastructure, high-frequency RF applications, and power electronics in industrial automation has further propelled the need for advanced substrate materials. The transition toward wide-bandgap semiconductors is reshaping the semiconductor manufacturing landscape, positioning SiC-OI as a key enabler of energy-efficient and high-performance electronics.

How Are Technological Advancements Enhancing SiC-On-Insulator and Other Substrate Materials? Exploring Innovations in Semiconductor Fabrication

Recent advancements in material science, epitaxial growth techniques, and wafer fabrication have significantly improved the performance, scalability, and cost-effectiveness of SiC-on-insulator and other specialized substrates. The development of larger SiC wafers, such as 200mm substrates, has increased manufacturing efficiency and reduced production costs, enabling mass adoption in high-power applications. Additionally, innovations in bonding and thinning techniques have enhanced the mechanical stability and electrical performance of SiC-based substrates, making them more suitable for high-voltage and high-temperature environments. The integration of AI-driven process control in wafer fabrication has further optimized yield rates, reducing defects and improving material consistency. Additionally, advancements in alternative substrates, such as gallium nitride (GaN) on silicon, sapphire, and diamond-based semiconductors, have expanded the range of options available for high-frequency and power applications. As semiconductor manufacturers continue to push the limits of material engineering, SiC-OI and other advanced substrates are becoming critical components in the evolution of high-efficiency electronics.

What Challenges Are Hindering the Growth of SiC-On-Insulator and Other Substrates? Addressing Market Constraints and Production Limitations

Despite their promising potential, the adoption of SiC-on-insulator and other advanced substrates faces several challenges, including high manufacturing costs, complex fabrication processes, and supply chain constraints. The production of high-quality SiC wafers requires precision engineering and specialized equipment, leading to higher costs compared to traditional silicon-based substrates. The limited availability of raw materials and the complexity of wafer processing have also resulted in supply chain bottlenecks, affecting the scalability of production. Additionally, the integration of SiC-based substrates into existing semiconductor manufacturing processes requires technological adaptations, increasing development time and costs for semiconductor manufacturers. Another challenge is the competition from alternative materials, such as GaN and diamond-based semiconductors, which offer distinct advantages in specific applications. Overcoming these challenges will require continued investments in research and development, process optimization, and strategic collaborations across the semiconductor ecosystem.

What’s Driving the Growth of the SiC-On-Insulator and Other Substrates Market? Identifying Key Expansion Factors

The growth in the SiC-on-insulator and other substrates market is driven by several factors, including the increasing adoption of power-efficient electronics, the expansion of the electric vehicle market, and advancements in 5G and high-frequency communication technologies. The push toward electrification in the automotive sector has created a strong demand for SiC-based power devices, which offer improved efficiency and reduced energy losses in EV powertrains and charging systems. Additionally, the deployment of 5G networks and high-frequency RF applications has accelerated the adoption of advanced substrates that support faster data transmission and lower power consumption. The rise of renewable energy systems, such as solar inverters and wind power converters, has also contributed to market expansion, as SiC-based components enable higher energy conversion efficiency. Government initiatives and funding for semiconductor research and domestic production have further bolstered the growth of advanced substrate technologies. With ongoing innovations in semiconductor materials and increasing investments in next-generation electronics, the SiC-on-insulator market is poised for strong growth, shaping the future of high-performance semiconductor manufacturing.

SCOPE OF STUDY:

The report analyzes the SiC-On-Insulator and Other Substrates market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:
Substrate Type (Semi-insulating SiC Substrates, Conductive SiC Substrates); Wafer Size (100mm Size, 150mm Size, 200mm Size); Application (Power Devices Application, RF Devices Application, Other Applications)

Geographic Regions/Countries:
World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

Select Competitors (Total 43 Featured) -

• Coherent Corp.
• GeneSiC Semiconductor Inc.
• GlobalWafers Co., Ltd.
• Infineon Technologies AG
• MTI Corporation
• NGK Insulators, Ltd.
• ON Semiconductor Corporation
• Resonac Holdings Corporation
• ROHM Co., Ltd.
• Semiconductor Wafer Inc.
• SICC Co., Ltd.
• SICOXS Corporation
• SiCrystal GmbH
• SK Siltron Co., Ltd.
• Soitec
• STMicroelectronics N.V.
• Sumitomo Electric Industries, Ltd.
• TankeBlue Co., Ltd.
• Wolfspeed, Inc.
• Xiamen Powerway Advanced Material Co.

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