RF GAN Devices in Telecom Infrastructure

Global RF GAN Devices in Telecom Infrastructure Market to Reach US$1.5 Billion by 2030

The global market for RF GAN Devices in Telecom Infrastructure estimated at US$935.3 Million in the year 2024, is expected to reach US$1.5 Billion by 2030, growing at a CAGR of 8.3% over the analysis period 2024-2030. Module, one of the segments analyzed in the report, is expected to record a 6.5% CAGR and reach US$881.3 Million by the end of the analysis period. Growth in the Discrete segment is estimated at 11.2% CAGR over the analysis period.

The U.S. Market is Estimated at US$245.9 Million While China is Forecast to Grow at 8.1% CAGR

The RF GAN Devices in Telecom Infrastructure market in the U.S. is estimated at US$245.9 Million in the year 2024. China, the world`s second largest economy, is forecast to reach a projected market size of US$242.4 Million by the year 2030 trailing a CAGR of 8.1% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 7.4% and 7.2% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 6.9% CAGR.

Global RF GaN Devices in Telecom Infrastructure Market – Key Trends & Drivers Summarized

Why Are RF GaN Devices Becoming the Heartbeat of 5G and Beyond?

RF GaN (Gallium Nitride) devices are quickly becoming indispensable in telecom infrastructure as the industry transitions to 5G and prepares for even more advanced wireless networks. Unlike traditional silicon and GaAs semiconductors, GaN delivers superior power density, efficiency, and frequency handling, making it the optimal technology for high-performance base station power amplifiers. As mobile operators scale small cell deployments and densify macrocell networks, GaN’s ability to provide linear amplification at high output levels ensures optimal coverage and minimal signal distortion. The explosion in data traffic driven by video streaming, IoT devices, and ultra-reliable low latency communications (URLLC) demands more robust front-end RF hardware, a challenge that GaN is uniquely positioned to meet. In addition, GaN devices support wider bandwidths needed for massive MIMO and carrier aggregation, central to 5G networks. The rising importance of energy efficiency and sustainability in telecom operations is also pushing network equipment vendors to adopt GaN-based solutions that reduce heat generation and energy consumption. Whether in urban macro sites or compact rural installations, GaN technology provides the compactness, ruggedness, and thermal efficiency needed to keep future networks lean and reliable.

What Technology Breakthroughs Are Accelerating Commercial Viability?

GaN-on-SiC (silicon carbide) technology is emerging as a major breakthrough in driving commercial deployment of RF GaN devices in telecom. These substrates offer high thermal conductivity and low loss, allowing devices to operate at higher voltages and frequencies without compromising reliability. Enhanced drain efficiency in GaN transistors now reaches beyond 70%, slashing power losses in 5G infrastructure deployments. Integration of GaN MMICs (monolithic microwave integrated circuits) into compact radio units is allowing network OEMs to design smaller, lighter, and more thermally stable radio heads. Envelope tracking and digital pre-distortion technologies are being increasingly paired with GaN PAs to maximize linearity and spectral efficiency. GaN devices are also achieving broader bandwidth support, including up to 1 GHz in some high-frequency 5G bands. Advanced packaging technologies, including air cavity and surface-mount solutions, are improving manufacturability and cost-effectiveness. The development of GaN-on-silicon devices, while still maturing, offers promise for large-scale, lower-cost production. These advances are transforming GaN from a niche solution into a mass-market technology central to the telecom industry’s growth agenda.

Which Deployment Scenarios Are Driving Demand Growth Globally?

The surge in demand for RF GaN devices is strongest in regions aggressively rolling out 5G infrastructure. Asia-Pacific, particularly China, South Korea, and Japan, is leading deployments of GaN-enabled macro base stations and small cells for urban and semi-rural coverage. North America and Europe are expanding GaN usage in both standalone and non-standalone 5G networks, focusing on sub-6 GHz and mmWave frequencies. Emerging economies in Southeast Asia, Latin America, and the Middle East are investing in GaN-based telecom gear to leapfrog into next-generation wireless systems. Beyond mobile networks, private 5G installations in factories, logistics hubs, and smart campuses are becoming high-potential segments. Defense and homeland security agencies are also procuring GaN-based telecom infrastructure for secure, high-bandwidth battlefield communications. Additionally, GaN is making inroads in wireless backhaul and microwave point-to-point links, where high power and efficiency are essential. As telcos aim for faster ROI and lower OPEX, GaN’s performance advantages in high-frequency and high-traffic deployments make it a compelling long-term investment.

What’s Fueling Market Expansion for RF GaN Devices in Telecom?

The growth in the global RF GaN devices in telecom infrastructure market is driven by escalating data consumption, 5G densification, energy efficiency goals, and evolving radio access technologies. Telecom operators are under pressure to expand capacity and coverage while minimizing power usage, and GaN offers the highest power-added efficiency (PAE) in the industry. The massive deployment of small cells, active antenna systems, and MIMO configurations requires compact, high-performance RF solutions that GaN excels in delivering. Regulatory pressure to reduce carbon emissions from telecom networks is prompting base station vendors to prioritize energy-saving RF front-ends. The continued evolution toward 6G and terahertz communication will further cement the role of GaN, which already supports higher frequency thresholds than legacy semiconductors. Growing investments from governments and telcos in rural broadband and high-speed connectivity initiatives are expanding infrastructure rollouts into underserved areas, adding to GaN adoption. Vendor collaboration across the RF supply chain is reducing costs and accelerating time-to-market for GaN-based systems. These interwoven drivers are laying the groundwork for GaN’s long-term dominance in telecom RF power systems.

SCOPE OF STUDY:

The report analyzes the RF GAN Devices in Telecom Infrastructure market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:
Product Type (Module, Discrete); Device Type (Filter, Duplexer, Power Amplifier, Switch, Low Noise Amplifier, Phase Shifters, Oscillators, Attenuators, Couplers, Antenna Tuners, Other Device Types)

Geographic Regions/Countries:
World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.

Select Competitors (Total 36 Featured) -

• Aethercomm Inc.
• Ampleon B.V.
• Analog Devices, Inc.
• Broadcom Inc.
• Coherent Corp. (formerly II-VI Inc.)
• Efficient Power Conversion Corporation
• Filtronic plc
• GaN Systems Inc.
• Guerrilla RF, Inc.
• Infineon Technologies AG
• Integra Technologies Inc.
• MACOM Technology Solutions Holdings Inc.
• Mercury Systems, Inc.
• Microchip Technology Inc.
• Mitsubishi Electric Corporation
• NXP Semiconductors N.V.
• Qorvo, Inc.
• RFHIC Corporation
• Skyworks Solutions, Inc.
• Sumitomo Electric Device Innovations, Inc.

TARIFF IMPACT FACTOR

Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by artificially increasing the COGS, reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.

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APRIL 2025: NEGOTIATION PHASE

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