Global Gallium Nitride Field-effect Transistors(GaN FETs) Market Analysis and Forecast 2026-2032

The global Gallium Nitride Field-effect Transistors(GaN FETs) market is projected to grow from US$ million in 2026 to US$ million by 2032, at a Compound Annual Growth Rate (CAGR) of % during the forecast period.

Gallium Nitride Field-effect Transistors(GaN FETs)'s global sales reached XX (k units) with a value of US$ XX Million, marking an change of XX% compared to the previous year. This performance has positioned Nexperia as the global sales leader, a title it has maintained for several consecutive years. Notably, Nexperia's performance in primary markets is also remarkable. In the Chinese market, sales were XX (k units), a change of XX% from the previous year. In Europe, sales were XX (k units), showing a year-on-year of XX%. In the US, sales were XX (k units), a year-on-year change of XX%.

The major global manufacturers in the Gallium Nitride Field-effect Transistors(GaN FETs) market include Nexperia, Renesas Electronics, Infineon Technologies, Transphorm, Panasonic Electronic, GaN Systems, Efficient Power Conversion Corporation., San'an Optoelectronics and Solid State Devices, etc. In 2025, the top three vendors accounted for approximately % of the revenue.

In terms of production side, this report researches the Gallium Nitride Field-effect Transistors(GaN FETs) production, growth rate, market share by manufacturers and by region (region level and country level), from 2021 to 2026, and forecast to 2032.

In terms of consumption side, this report focuses on the sales of Gallium Nitride Field-effect Transistors(GaN FETs) by region (region level and country level), by Company, by Type and by Application. from 2021 to 2026 and forecast to 2032.

This report presents an overview of global market for Gallium Nitride Field-effect Transistors(GaN FETs), capacity, output, revenue and price. Analyses of the global market trends, with historic market revenue or sales data for 2021 - 2025, estimates for 2026, and projections of CAGR through 2032.

This report researches the key producers of Gallium Nitride Field-effect Transistors(GaN FETs), also provides the consumption of main regions and countries. Of the upcoming market potential for Gallium Nitride Field-effect Transistors(GaN FETs), and key regions or countries of focus to forecast this market into various segments and sub-segments. Country specific data and market value analysis for the U.S., Canada, Mexico, Brazil, China, Japan, South Korea, Southeast Asia, India, Germany, the U.K., Italy, Middle East, Africa, and Other Countries.

This report focuses on the Gallium Nitride Field-effect Transistors(GaN FETs) sales, revenue, market share and industry ranking of main manufacturers, data from 2021 to 2026. Identification of the major stakeholders in the global Gallium Nitride Field-effect Transistors(GaN FETs) market, and analysis of their competitive landscape and market positioning based on recent developments and segmental revenues. This report will help stakeholders to understand the competitive landscape and gain more insights and position their businesses and market strategies in a better way.

This report analyzes the segments data by Type and by Application, sales, revenue, and price, from 2021 to 2032. Evaluation and forecast the market size for Gallium Nitride Field-effect Transistors(GaN FETs) sales, projected growth trends, production technology, application and end-user industry.


Gallium Nitride Field-effect Transistors(GaN FETs) Segment by Company

Nexperia
Renesas Electronics
Infineon Technologies
Transphorm
Panasonic Electronic
GaN Systems
Efficient Power Conversion Corporation.
San'an Optoelectronics
Solid State Devices
Texas Instruments
Qorvo
pSemi Corporation
Toshiba Infrastructure Systems & Solutions Corporation
Alpha and Omega Semiconductor
NTT Advanced Technology Corporation
Tektronix
ON Semiconductor
Advance Compound Semiconductors
ST Microelectronics
Wolfspeed

Gallium Nitride Field-effect Transistors(GaN FETs) Segment by Type

Metal-Oxide-Semiconductor Field-Effect Transistor
Heterojunction Field Effect Transistor
Modulation Doped Field Effect Transistor

Gallium Nitride Field-effect Transistors(GaN FETs) Segment by Application

Consumer Electronics
Automobile Circuit
Communication Device
Industrial Appliances
Charging Equipment

Gallium Nitride Field-effect Transistors(GaN FETs) Segment by Region

North America
United States
Canada
Mexico
Europe
Germany
France
U.K.
Italy
Russia
Spain
Netherlands
Switzerland
Sweden
Poland
Asia-Pacific
China
Japan
South Korea
India
Australia
Taiwan
Southeast Asia
South America
Brazil
Argentina
Chile
Middle East & Africa
Egypt
South Africa
Israel
Türkiye
GCC Countries

Study Objectives

1. To analyze and research the global status and future forecast, involving, production, value, consumption, growth rate (CAGR), market share, historical and forecast.
2. To present the key manufacturers, capacity, production, revenue, market share, and Recent Developments.
3. To split the breakdown data by regions, type, manufacturers, and Application.
4. To analyze the global and key regions market potential and advantage, opportunity and challenge, restraints, and risks.
5. To identify significant trends, drivers, influence factors in global and regions.
6. To analyze competitive developments such as expansions, agreements, new product launches, and acquisitions in the market.

Reasons to Buy This Report

1. This report will help the readers to understand the competition within the industries and strategies for the competitive environment to enhance the potential profit. The report also focuses on the competitive landscape of the global Gallium Nitride Field-effect Transistors(GaN FETs) market, and introduces in detail the market share, industry ranking, competitor ecosystem, market performance, new product development, operation situation, expansion, and acquisition. etc. of the main players, which helps the readers to identify the main competitors and deeply understand the competition pattern of the market.
2. This report will help stakeholders to understand the global industry status and trends of Gallium Nitride Field-effect Transistors(GaN FETs) and provides them with information on key market drivers, restraints, challenges, and opportunities.
3. This report will help stakeholders to understand competitors better and gain more insights to strengthen their position in their businesses. The competitive landscape section includes the market share and rank (in volume and value), competitor ecosystem, new product development, expansion, and acquisition.
4. This report stays updated with novel technology integration, features, and the latest developments in the market.
5. This report helps stakeholders to gain insights into which regions to target globally.
6. This report helps stakeholders to gain insights into the end-user perception concerning the adoption of Gallium Nitride Field-effect Transistors(GaN FETs).
7. This report helps stakeholders to identify some of the key players in the market and understand their valuable contribution.

Chapter Outline

Chapter 1: Introduces the report scope of the report, executive summary of different market segments (by type and by application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the market and its likely evolution in the short to mid-term, and long term.
Chapter 2: Introduces the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 3: Gallium Nitride Field-effect Transistors(GaN FETs) production/output of global and key producers (regions/countries). It provides a quantitative analysis of the production, and development potential of each producer in the next six years.
Chapter 4: Sales (consumption), revenue of Gallium Nitride Field-effect Transistors(GaN FETs) in global, regional level and country level. It provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space of each country in the world.
Chapter 5: Detailed analysis of Gallium Nitride Field-effect Transistors(GaN FETs) manufacturers competitive landscape, price, sales, revenue, market share and industry ranking, latest development plan, merger, and acquisition information, etc.
Chapter 6: Provides the analysis of various market segments by type, covering the sales, revenue, average price, and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 7: Provides the analysis of various market segments by application, covering the sales, revenue, average price, and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 8: Provides profiles of key manufacturers, introducing the basic situation of the main companies in the market in detail, including product descriptions and specifications, Gallium Nitride Field-effect Transistors(GaN FETs) sales, revenue, price, gross margin, and recent development, etc.
Chapter 9: North America by type, by application and by country, sales, and revenue for each segment.
Chapter 10: Europe by type, by application and by country, sales, and revenue for each segment.
Chapter 11: China by type, by application, sales, and revenue for each segment.
Chapter 12: Asia (Excluding China) by type, by application and by region, sales, and revenue for each segment.
Chapter 13: South America, Middle East and Africa by type, by application and by country, sales, and revenue for each segment.
Chapter 14: Analysis of industrial chain, sales channel, key raw materials, distributors and customers.
Chapter 15: The main concluding insights of the report.

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