Global QLC NAND Flash Memory Market Growth 2025-2031

The global QLC NAND Flash Memory market size is predicted to grow from US$ 5015 million in 2025 to US$ 7908 million in 2031; it is expected to grow at a CAGR of 7.9% from 2025 to 2031.

QLC (Quad-Level Cell) NAND Flash Memory is a type of non-volatile memory that stores four bits per cell by utilizing 16 voltage levels. It offers higher data density and lower cost per gigabyte compared to TLC (Triple-Level Cell) and MLC (Multi-Level Cell) NAND, but has lower endurance.

United States market for QLC NAND Flash Memory is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

China market for QLC NAND Flash Memory is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Europe market for QLC NAND Flash Memory is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Global key QLC NAND Flash Memory players cover Micron Technology, Yangtze Memory Technology, Kioxia, Samsung, Intel, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2024.

LP Information, Inc. (LPI) ' newest research report, the “QLC NAND Flash Memory Industry Forecast” looks at past sales and reviews total world QLC NAND Flash Memory sales in 2024, providing a comprehensive analysis by region and market sector of projected QLC NAND Flash Memory sales for 2025 through 2031. With QLC NAND Flash Memory sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world QLC NAND Flash Memory industry.

This Insight Report provides a comprehensive analysis of the global QLC NAND Flash Memory landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on QLC NAND Flash Memory portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global QLC NAND Flash Memory market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for QLC NAND Flash Memory and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global QLC NAND Flash Memory.

This report presents a comprehensive overview, market shares, and growth opportunities of QLC NAND Flash Memory market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
2D
3D

Segmentation by Application:
Solid-State Drive (SSD)
Mobile Storage Device
Memory Card

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Micron Technology
Yangtze Memory Technology
Kioxia
Samsung
Intel
SanDisk

Key Questions Addressed in this Report

What is the 10-year outlook for the global QLC NAND Flash Memory market?

What factors are driving QLC NAND Flash Memory market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do QLC NAND Flash Memory market opportunities vary by end market size?

How does QLC NAND Flash Memory break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.