SiC and GaN Power Semiconductor Market Growth, Size, Trends Analysis - By Processor, By Power Range, By Vertical - Regional Outlook, Competitive Strategies and Segment Forecast to 2034
Description
SiC and GaN Power Semiconductor Market Introduction and Overview
According to SPER market research, ‘SiC and GaN Power Semiconductor Market Size- By Processor, By Power Range, By Vertical - Regional Outlook, Competitive Strategies and Segment Forecast to 2034’ state that the SiC and GaN Power Semiconductor Market is predicted to reach 26.61 billion by 2034 with a CAGR of 25.23%.
High-performance wide-band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) outperform conventional silicon-based apparatus. Electric vehicles (EVs), industrial power supply, and renewable energy systems are just a few examples of high-power applications that benefit greatly from SiC's high thermal conductivity and breakdown voltage. It permits more compact designs, increased efficiency, and reduced switching losses.
Restraints:Generally speaking, GaN and SiC power semiconductors are more expensive up front than traditional silicon-based semiconductors. Widespread adoption might be deterred by this upfront cost, particularly in sectors with limited funding. Certain raw materials are required for the production of GaN and SiC power semiconductors, and these ingredients may not always be easily accessible.
Scope of the Report:
Report Metric Details
Market size available for years 2021-2034
Base year considered 2024
Forecast period 2025-2034
Segments covered By Processor, By Power Range, By Vertical.
Regions covered
North America, Latin America, Asia-Pacific, Europe, and Middle East & Africa.
Companies Covered
Alpha & Omega Semiconductor, CISSOID, Diodes Incorporated, Fuji Electric Co., Ltd., Infineon Technologies AG, Littelfuse, Inc., Microsemi Corporation, Mitsubishi Electric Corporation, Nexperia, ON Semiconductor Corporation, Panasonic Corporation, Renesas Electronics Corporation, ROHM CO., LTD., SANKEN ELECTRIC CO., LTD., SEMIKRON. other.
SiC and GaN Power Semiconductor Market Segmentation:
By Processor:Based on the Processor, Global SiC and GaN Power Semiconductor Market is segmented as; SiC power module, GaN power module, Discrete SiC, Discrete GaN.
By Power Range:Based on the Power Range, Global SiC and GaN Power Semiconductor Market is segmented as; Low-power, Medium-power, High-power.
By Vertical:Based on the Vertical, Global SiC and GaN Power Semiconductor Market is segmented as; Power supplies, Industrial motor drives, H/EV, PV inverters, Traction.
By Region:This research also includes data for North America, Latin America, Asia-Pacific, Europe and Middle East & Africa.
According to SPER market research, ‘SiC and GaN Power Semiconductor Market Size- By Processor, By Power Range, By Vertical - Regional Outlook, Competitive Strategies and Segment Forecast to 2034’ state that the SiC and GaN Power Semiconductor Market is predicted to reach 26.61 billion by 2034 with a CAGR of 25.23%.
High-performance wide-band gap power semiconductors like silicon carbide (SiC) and gallium nitride (GaN) outperform conventional silicon-based apparatus. Electric vehicles (EVs), industrial power supply, and renewable energy systems are just a few examples of high-power applications that benefit greatly from SiC's high thermal conductivity and breakdown voltage. It permits more compact designs, increased efficiency, and reduced switching losses.
Restraints:Generally speaking, GaN and SiC power semiconductors are more expensive up front than traditional silicon-based semiconductors. Widespread adoption might be deterred by this upfront cost, particularly in sectors with limited funding. Certain raw materials are required for the production of GaN and SiC power semiconductors, and these ingredients may not always be easily accessible.
Scope of the Report:
Report Metric Details
Market size available for years 2021-2034
Base year considered 2024
Forecast period 2025-2034
Segments covered By Processor, By Power Range, By Vertical.
Regions covered
North America, Latin America, Asia-Pacific, Europe, and Middle East & Africa.
Companies Covered
Alpha & Omega Semiconductor, CISSOID, Diodes Incorporated, Fuji Electric Co., Ltd., Infineon Technologies AG, Littelfuse, Inc., Microsemi Corporation, Mitsubishi Electric Corporation, Nexperia, ON Semiconductor Corporation, Panasonic Corporation, Renesas Electronics Corporation, ROHM CO., LTD., SANKEN ELECTRIC CO., LTD., SEMIKRON. other.
SiC and GaN Power Semiconductor Market Segmentation:
By Processor:Based on the Processor, Global SiC and GaN Power Semiconductor Market is segmented as; SiC power module, GaN power module, Discrete SiC, Discrete GaN.
By Power Range:Based on the Power Range, Global SiC and GaN Power Semiconductor Market is segmented as; Low-power, Medium-power, High-power.
By Vertical:Based on the Vertical, Global SiC and GaN Power Semiconductor Market is segmented as; Power supplies, Industrial motor drives, H/EV, PV inverters, Traction.
By Region:This research also includes data for North America, Latin America, Asia-Pacific, Europe and Middle East & Africa.
Table of Contents
252 Pages
- 1. Introduction
- 1.1. Scope of the report
- 1.2. Market segment analysis
- 2. Research Methodology
- 2.1. Research data source
- 2.1.1. Secondary Data
- 2.1.2. Primary Data
- 2.1.3. SPERs internal database
- 2.1.4. Premium insight from KOLs
- 2.2. Market size estimation
- 2.2.1. Top-down and Bottom-up approach
- 2.3. Data triangulation
- 3. Executive Summary
- 4. Market Dynamics
- 4.1. Driver, Restraint, Opportunity and Challenges analysis
- 4.1.1. Drivers
- 4.1.2. Restraints
- 4.1.3. Opportunities
- 4.1.4. Challenges
- 5. Market variable and outlook
- 5.1. SWOT Analysis
- 5.1.1. Strengths
- 5.1.2. Weaknesses
- 5.1.3. Opportunities
- 5.1.4. Threats
- 5.2. PESTEL Analysis
- 5.2.1. Political Landscape
- 5.2.2. Economic Landscape
- 5.2.3. Social Landscape
- 5.2.4. Technological Landscape
- 5.2.5. Environmental Landscape
- 5.2.6. Legal Landscape
- 5.3. PORTERs Five Forces
- 5.3.1. Bargaining power of suppliers
- 5.3.2. Bargaining power of buyers
- 5.3.3. Threat of Substitute
- 5.3.4. Threat of new entrant
- 5.3.5. Competitive rivalry
- 5.4. Heat Map Analysis
- 6. Competitive Landscape
- 6.1. Global SiC and GaN Power Semiconductor Market Manufacturing Base Distribution, Sales Area, Product Type
- 6.2. Mergers & Acquisitions, Partnerships, Product Launch, and Collaboration in Global SiC and GaN Power Semiconductor Market
- 7. Global SiC and GaN Power Semiconductor Market, By Processor (USD Million) 2021-2034
- 7.1. SiC power module
- 7.2. GaN power module
- 7.3. Discrete SiC
- 7.4. Discrete GaN
- 8. Global SiC and GaN Power Semiconductor Market, By Power Range (USD Million) 2021-2034
- 8.1. Low-power
- 8.2. Medium-power
- 8.3. High-power
- 9. Global SiC and GaN Power Semiconductor Market, By Vertical (USD Million) 2021-2034
- 9.1. Power supplies
- 9.2. Industrial motor drives
- 9.3. H/EV
- 9.4. PV inverters
- 9.5. Traction
- 10. Global SiC and GaN Power Semiconductor Market, (USD Million) 2021-2034
- 10.1. Global SiC and GaN Power Semiconductor Market Size and Market Share
- 11. Global SiC and GaN Power Semiconductor Market, By Region, (USD Million) 2021-2034
- 11.1. Asia-Pacific
- 11.1.1. Australia
- 11.1.2. China
- 11.1.3. India
- 11.1.4. Japan
- 11.1.5. South Korea
- 11.1.6. Rest of Asia-Pacific
- 11.2. Europe
- 11.2.1. France
- 11.2.2. Germany
- 11.2.3. Italy
- 11.2.4. Spain
- 11.2.5. United Kingdom
- 11.2.6. Rest of Europe
- 11.3. Middle East and Africa
- 11.3.1. Kingdom of Saudi Arabia
- 11.3.2. United Arab Emirates
- 11.3.3. Qatar
- 11.3.4. South Africa
- 11.3.5. Egypt
- 11.3.6. Morocco
- 11.3.7. Nigeria
- 11.3.8. Rest of Middle-East and Africa
- 11.4. North America
- 11.4.1. Canada
- 11.4.2. Mexico
- 11.4.3. United States
- 11.5. Latin America
- 11.5.1. Argentina
- 11.5.2. Brazil
- 11.5.3. Rest of Latin America
- 12. Company Profile
- 12.1. Alpha & Omega Semiconductor
- 12.1.1. Company details
- 12.1.2. Financial outlook
- 12.1.3. Product summary
- 12.1.4. Recent developments
- 12.2. CISSOID
- 12.2.1. Company details
- 12.2.2. Financial outlook
- 12.2.3. Product summary
- 12.2.4. Recent developments
- 12.3. Diodes Incorporated
- 12.3.1. Company details
- 12.3.2. Financial outlook
- 12.3.3. Product summary
- 12.3.4. Recent developments
- 12.4. Fuji Electric Co., Ltd.
- 12.4.1. Company details
- 12.4.2. Financial outlook
- 12.4.3. Product summary
- 12.4.4. Recent developments
- 12.5. Infineon Technologies AG
- 12.5.1. Company details
- 12.5.2. Financial outlook
- 12.5.3. Product summary
- 12.5.4. Recent developments
- 12.6. Littelfuse, Inc.
- 12.6.1. Company details
- 12.6.2. Financial outlook
- 12.6.3. Product summary
- 12.6.4. Recent developments
- 12.7. Microsemi Corporation
- 12.7.1. Company details
- 12.7.2. Financial outlook
- 12.7.3. Product summary
- 12.7.4. Recent developments
- 12.8. Mitsubishi Electric Corporation
- 12.8.1. Company details
- 12.8.2. Financial outlook
- 12.8.3. Product summary
- 12.8.4. Recent developments
- 12.9. Nexperia
- 12.9.1. Company details
- 12.9.2. Financial outlook
- 12.9.3. Product summary
- 12.9.4. Recent developments
- 12.10. ON Semiconductor Corporation
- 12.10.1. Company details
- 12.10.2. Financial outlook
- 12.10.3. Product summary
- 12.10.4. Recent developments
- 12.11. Others
- 13. Conclusion
- 14. List of Abbreviations
- 15. Reference Links
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