Global Wide Band Gap Semiconductor Market Growth (Status and Outlook) 2025-2031

The global Wide Band Gap Semiconductor market size is predicted to grow from US$ 3189 million in 2025 to US$ 14430 million in 2031; it is expected to grow at a CAGR of 28.6% from 2025 to 2031.

Wide Band Gap Semiconductor refer to power electronic devices manufactured using wide bandgap materials such as silicon carbide (SiC) and gallium nitride (GaN). These materials possess a wider bandgap compared to traditional silicon-based materials, enabling operation at higher temperatures, voltages, and frequencies. They exhibit lower on-state resistance, higher efficiency, and smaller form factors. WBG devices and modules are widely applied in high-efficiency power conversion, electric vehicles, renewable energy systems, and other fields.

Global key Wide Band Gap Semiconductor manufacturers include Wolfspped (Cree), Infineon Technologies, ROHM Semiconductor, STMicroelectronics and onsemi etc. The top 5 companies hold a share over 70%.

The market drivers for Wide Band Gap Semiconductor primarily stem from their significant advantages in performance and efficiency, as well as the global demand for improved energy efficiency. First, the rapid expansion of the electric vehicle (EV) market has made WBG devices and modules a critical component in EV power systems due to their ability to operate at higher temperatures, voltages, and frequencies while reducing energy losses. Additionally, the fast-growing renewable energy systems, such as solar inverters and wind power systems, are driving the adoption of WBG devices and modules because they enable more efficient power conversion and higher system reliability. Furthermore, the increasing demand for efficient power management in data centers and telecommunications infrastructure is promoting the market penetration of WBG devices and modules. Due to the lower on-state resistance and higher switching speeds of wide bandgap materials, power electronics can operate at higher efficiencies, reducing cooling requirements and lowering operational costs.

From a trend’s perspective, Wide Band Gap Semiconductor are moving towards higher integration and modularization. In the future, advancements in manufacturing processes and cost reductions will make WBG devices and modules more prevalent, gradually replacing traditional silicon-based devices. Currently, gallium nitride (GaN) and silicon carbide (SiC) are the two leading materials, with SiC dominating high-power applications and GaN being more suitable for high-frequency applications. Over the next few years, these two materials are expected to continue leading the market, but emerging ultra-wide bandgap materials like zinc oxide (ZnO) and diamond may also begin to gain prominence. Moreover, the rise of smart grids, industrial automation, and 5G communications offers vast application prospects for WBG devices and modules. The growing demand for high-performance, low-energy, and compact solutions in these emerging fields will accelerate innovation and development in WBG technology.

LPI (LP Information)' newest research report, the “Wide Band Gap Semiconductor Industry Forecast” looks at past sales and reviews total world Wide Band Gap Semiconductor sales in 2024, providing a comprehensive analysis by region and market sector of projected Wide Band Gap Semiconductor sales for 2025 through 2031. With Wide Band Gap Semiconductor sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Wide Band Gap Semiconductor industry.

This Insight Report provides a comprehensive analysis of the global Wide Band Gap Semiconductor landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyses the strategies of leading global companies with a focus on Wide Band Gap Semiconductor portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Wide Band Gap Semiconductor market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Wide Band Gap Semiconductor and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Wide Band Gap Semiconductor.

This report presents a comprehensive overview, market shares, and growth opportunities of Wide Band Gap Semiconductor market by product type, application, key players and key regions and countries.

Segmentation by Type:
Power SiC Device
Power GaN Device

Segmentation by Application:
Electric Vehicle
Photovoltaic and Energy Storage Systems
Electric Vehicle Charging Infrastructure
PFC Power Supply
Rail
Motor Drive
UPS
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
Wolfspped (Cree)
Infineon Technologies
ROHM Semiconductor
STMicroelectronics
onsemi
Mitsubishi Electric
Littelfuse
Microsemi
GeneSiC Semiconductor
Transphorm
GaN Systems
Navitas Semiconductor
Efficient Power Conversion (EPC)
Coherent
GE Aerospace
Bruckewell
Powerex
Qorvo
DENSO
Fuji Electric
Renesas
Semikron Danfoss
Bosch
Vitesco
NXP
CISSOID
Trinno
SK powertech
Rfsemi
Power Master Semiconductor
Actron Technology
United Nova Technology
Silan
GTA Semiconductor
BASiC Semiconductor
Pyrotech Workspace Solutions
Wingtech Technology
Yangzhou Yangjie Electronic Technology
Oriental Semiconductor
BYD Semiconductor

Please note: The report will take approximately 2 business days to prepare and deliver.