Global Silicon-Base Schottky Rectifier Market Growth 2025-2031

The global Silicon-Base Schottky Rectifier market size is predicted to grow from US$ 1000 million in 2025 to US$ 1296 million in 2031; it is expected to grow at a CAGR of 4.4% from 2025 to 2031.

A Schottky barrier diode (SBD) is a device in which a semiconductor and a metal such as molybdenum are bonded instead of a pn junction. In general, semiconductors in which metals are bonded to n-type layers have been commercialized. It is suitable for high-speed switching applications, because of small forward voltage and short reverse recovery time.

Schottky diode refers to an electronics part which is used at a boundless range for various applications such as power OR circuits, control rectifier, RF applications and others especially as a blender to identifier diode. The product is also known as several other names including Surface Barrier Diode, Hot Carrier Diode and Hot Electron Diode.

The global key manufacturers of Schottky Rectifier Diode include Vishay Intertechnology, Fuji Electric, China Resources Microelectronics, Rohm, Nexperia, Toshiba, ST Microelectronics, Diodes Incorporated, ON Semiconductor, Jilin Sino-Microelectronics, Shandong Jingdao Microelectronics, Kyocera AVX, Microchip (Microsemi), PANJIT Group, and Infineon, etc. in 2021, the global top four players hold a share nearly 40%.

In terms of end use, currently Automotive is the largest segment, with a share about 30 percent in 2021, and this percent will reach 35% in 2028, driven by the rapid growth of EV. Energy is also important market, driven by the market demand of solar energy and wind energy. In consumer good segment, the domestic robots, lighting, game consoles, Home Entertainment, and smart wearables are major applications, will increase rapidly.

LP Information, Inc. (LPI) ' newest research report, the “Silicon-Base Schottky Rectifier Industry Forecast” looks at past sales and reviews total world Silicon-Base Schottky Rectifier sales in 2024, providing a comprehensive analysis by region and market sector of projected Silicon-Base Schottky Rectifier sales for 2025 through 2031. With Silicon-Base Schottky Rectifier sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Silicon-Base Schottky Rectifier industry.

This Insight Report provides a comprehensive analysis of the global Silicon-Base Schottky Rectifier landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Silicon-Base Schottky Rectifier portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Silicon-Base Schottky Rectifier market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Silicon-Base Schottky Rectifier and breaks down the forecast by Reverse Voltage, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Silicon-Base Schottky Rectifier.

This report presents a comprehensive overview, market shares, and growth opportunities of Silicon-Base Schottky Rectifier market by product type, application, key manufacturers and key regions and countries.

Segmentation by Reverse Voltage:
Below 50 V
50 V to 100 V
101 V to 200 V

Segmentation by Application:
Automotive & Transportation
Energy & Power Grid
Consumer
Industrial Applications
Telecommunications
Avionics, Military and Medical
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Vishay Intertechnology
Rohm
onsemi
Infineon
Nexperia (Wingtech)
ST Microelectronics
Diodes Incorporated
PANJIT Group
Toshiba
Fuji Electric
Kyocera AVX
Littelfuse (IXYS)
Microchip (Microsemi)
Sanken Electric
Texas Instruments
Bourns, Inc
Central Semiconductor Corp.
Shindengen
MACOM
KEC Corporation
Wolfspeed
Unisonic Technologies (UTC)
Hangzhou Silan Microelectronics
Yangzhou Yangjie Electronic Technology
China Resources Microelectronics Limited
Jilin Sino-Microelectronics
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Changzhou Galaxy Century Microelectronics
Shandong Jingdao Microelectronics
Chongqing Pingwei Enterprise
Prisemi
Navitas (GeneSiC)
Sanan IC
Mitsubishi Electric (Vincotech)
GeneSiC Semiconductor Inc.
Shenzhen BASiC Semiconductor
Renesas Electronics
Wayon Electronics
WeEn Semiconductors
SemiQ
Cissoid

Key Questions Addressed in this Report

What is the 10-year outlook for the global Silicon-Base Schottky Rectifier market?

What factors are driving Silicon-Base Schottky Rectifier market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Silicon-Base Schottky Rectifier market opportunities vary by end market size?

How does Silicon-Base Schottky Rectifier break out by Reverse Voltage, by Application?

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