Global Power SiC Market Growth 2025-2031

The global Power SiC market size is predicted to grow from US$ 4991 million in 2025 to US$ 25360 million in 2031; it is expected to grow at a CAGR of 31.1% from 2025 to 2031.

This report studies the SiC Based Power Electronics, key segments cover SiC MOSFET, SiC Schottky Barrier Diodes (SBDs), SiC FETs, SiC JFETs etc.

Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.

A silicon carbide (SiC) schottky diode is a semiconductor diode formed by the junction of a semiconductor with a metal. SiC Schottky barrier diodes have a much lower reverse leakage current than their Si counterparts and also a higher forward voltage. They significantly reduce losses and can therefore be used to increase system efficiency and reduce product size.

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent. The key players of SiC MOSFET Discrete are STMicroelectronics, Infineon, Wolfspeed, Rohm, and CETC 55, etc. The top five players hold a share over 80 percent. The key players of SiC SBD are STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), and San'an Optoelectronics, etc. The top five players hold a share over 70 percent.

LP Information, Inc. (LPI) ' newest research report, the “Power SiC Industry Forecast” looks at past sales and reviews total world Power SiC sales in 2024, providing a comprehensive analysis by region and market sector of projected Power SiC sales for 2025 through 2031. With Power SiC sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Power SiC industry.

This Insight Report provides a comprehensive analysis of the global Power SiC landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Power SiC portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Power SiC market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Power SiC and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Power SiC.

This report presents a comprehensive overview, market shares, and growth opportunities of Power SiC market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
SiC MOSFET Module
SiC MOSFET Discrete
SiC Diode (SiC SBD)
Others (SiC JFETs & FETs)

Segmentation by Application:
Automotive & EV/HEV
EV Charging
Industrial Motor/Drive
PV, Energy Storage, Wind Power
UPS, Data Center & Server
Rail Transport
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric (Vincotech)
Semikron Danfoss
Fuji Electric
Navitas (GeneSiC)
Toshiba
Qorvo (UnitedSiC)
San'an Optoelectronics
Littelfuse (IXYS)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
SanRex
Alpha & Omega Semiconductor
Bosch
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
StarPower
Yangzhou Yangjie Electronic Technology
Guangdong AccoPower Semiconductor
Changzhou Galaxy Century Microelectronics
Hangzhou Silan Microelectronics
Cissoid
SK powertech
InventChip Technology
Hebei Sinopack Electronic Technology
Oriental Semiconductor
Jilin Sino-Microelectronics
PN Junction Semiconductor (Hangzhou)
United Nova Technology

Key Questions Addressed in this Report

What is the 10-year outlook for the global Power SiC market?

What factors are driving Power SiC market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Power SiC market opportunities vary by end market size?

How does Power SiC break out by Type, by Application?

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