Global Power Schottky Diode Market Growth 2025-2031
Description
The global Power Schottky Diode market size is predicted to grow from US$ 1538 million in 2025 to US$ 3253 million in 2031; it is expected to grow at a CAGR of 13.3% from 2025 to 2031.
The impact of the latest U.S. tariff measures and the corresponding policy responses from countries worldwide on market competitiveness, regional economic performance, and supply chain configurations will be comprehensively evaluated in this report.
Power Schottky diodes combine the low forward‐voltage drop and fast switching of Schottky barrier diodes with enhanced current and voltage handling suited for power applications. They employ a metal–semiconductor junction (typically metal silicide on n-type silicon) to minimize stored charge and conduction losses, yielding forward drops of 0.15–0.45 V and switching speeds up to tens of nanoseconds. Compared to p–n rectifiers, power Schottkys offer higher efficiency and simplified thermal design, though they exhibit greater reverse leakage and modest reverse‐voltage limits (typically ≤ 200 V). Silicon carbide (SiC) variants extend these limits to kilovolt ratings with negligible recovery losses. Key applications include switched-mode power supplies, photovoltaic blocking diodes, OR-ing circuits, and high-speed clamping.
Si SBD is the largest segment, this segment holds 95% in terms of volume, while SiC SBD will grow at a CAGR of 18.5% during next six years.
The global key manufacturers of Power Schottky Diode include Vishay Intertechnology, Fuji Electric, China Resources Microelectronics, Rohm, Nexperia, Toshiba, ST Microelectronics, Diodes Incorporated, ON Semiconductor, Jilin Sino-Microelectronics, Shandong Jingdao Microelectronics, Kyocera AVX, Microchip (Microsemi), PANJIT Group, and Infineon, etc. in 2024, the global top ten players hold a share nearly 65%.
In terms of end use, currently Automotive is the largest segment, with a share about 36 percent in 2024, and this percent will reach 40% in 2031, driven by the rapid growth of EV. Energy is also important market, driven by the market demand of solar energy and wind energy. In consumer good segment, the domestic robots, lighting, game consoles, Home Entertainment, and smart wearables are major applications, will increase rapidly.
LP Information, Inc. (LPI) ' newest research report, the “Power Schottky Diode Industry Forecast” looks at past sales and reviews total world Power Schottky Diode sales in 2024, providing a comprehensive analysis by region and market sector of projected Power Schottky Diode sales for 2025 through 2031. With Power Schottky Diode sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Power Schottky Diode industry.
This Insight Report provides a comprehensive analysis of the global Power Schottky Diode landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Power Schottky Diode portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Power Schottky Diode market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Power Schottky Diode and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Power Schottky Diode.
This report presents a comprehensive overview, market shares, and growth opportunities of Power Schottky Diode market by product type, application, key manufacturers and key regions and countries.
Segmentation by Type:
SiC Schottky Diode
Si Schottky Diode
Segmentation by Application:
Automotive & Transportation
Energy & Power Grid
Consumer Electronics
Industrial Applications
Telecommunications
Avionics, Military and Medical
Others
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
Microchip (Microsemi)
Fuji Electric
Navitas (GeneSiC)
Toshiba
San'an Optoelectronics
Littelfuse (IXYS)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
Yangzhou Yangjie Electronic Technology
Changzhou Galaxy Century Microelectronics
Kyocera AVX
Sanken Electric
Texas Instruments
Shindengen
Hangzhou Silan Microelectronics
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Key Questions Addressed in this Report
What is the 10-year outlook for the global Power Schottky Diode market?
What factors are driving Power Schottky Diode market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Power Schottky Diode market opportunities vary by end market size?
How does Power Schottky Diode break out by Type, by Application?
Please note: The report will take approximately 2 business days to prepare and deliver.
The impact of the latest U.S. tariff measures and the corresponding policy responses from countries worldwide on market competitiveness, regional economic performance, and supply chain configurations will be comprehensively evaluated in this report.
Power Schottky diodes combine the low forward‐voltage drop and fast switching of Schottky barrier diodes with enhanced current and voltage handling suited for power applications. They employ a metal–semiconductor junction (typically metal silicide on n-type silicon) to minimize stored charge and conduction losses, yielding forward drops of 0.15–0.45 V and switching speeds up to tens of nanoseconds. Compared to p–n rectifiers, power Schottkys offer higher efficiency and simplified thermal design, though they exhibit greater reverse leakage and modest reverse‐voltage limits (typically ≤ 200 V). Silicon carbide (SiC) variants extend these limits to kilovolt ratings with negligible recovery losses. Key applications include switched-mode power supplies, photovoltaic blocking diodes, OR-ing circuits, and high-speed clamping.
Si SBD is the largest segment, this segment holds 95% in terms of volume, while SiC SBD will grow at a CAGR of 18.5% during next six years.
The global key manufacturers of Power Schottky Diode include Vishay Intertechnology, Fuji Electric, China Resources Microelectronics, Rohm, Nexperia, Toshiba, ST Microelectronics, Diodes Incorporated, ON Semiconductor, Jilin Sino-Microelectronics, Shandong Jingdao Microelectronics, Kyocera AVX, Microchip (Microsemi), PANJIT Group, and Infineon, etc. in 2024, the global top ten players hold a share nearly 65%.
In terms of end use, currently Automotive is the largest segment, with a share about 36 percent in 2024, and this percent will reach 40% in 2031, driven by the rapid growth of EV. Energy is also important market, driven by the market demand of solar energy and wind energy. In consumer good segment, the domestic robots, lighting, game consoles, Home Entertainment, and smart wearables are major applications, will increase rapidly.
LP Information, Inc. (LPI) ' newest research report, the “Power Schottky Diode Industry Forecast” looks at past sales and reviews total world Power Schottky Diode sales in 2024, providing a comprehensive analysis by region and market sector of projected Power Schottky Diode sales for 2025 through 2031. With Power Schottky Diode sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Power Schottky Diode industry.
This Insight Report provides a comprehensive analysis of the global Power Schottky Diode landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Power Schottky Diode portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Power Schottky Diode market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Power Schottky Diode and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Power Schottky Diode.
This report presents a comprehensive overview, market shares, and growth opportunities of Power Schottky Diode market by product type, application, key manufacturers and key regions and countries.
Segmentation by Type:
SiC Schottky Diode
Si Schottky Diode
Segmentation by Application:
Automotive & Transportation
Energy & Power Grid
Consumer Electronics
Industrial Applications
Telecommunications
Avionics, Military and Medical
Others
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
Microchip (Microsemi)
Fuji Electric
Navitas (GeneSiC)
Toshiba
San'an Optoelectronics
Littelfuse (IXYS)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
Yangzhou Yangjie Electronic Technology
Changzhou Galaxy Century Microelectronics
Kyocera AVX
Sanken Electric
Texas Instruments
Shindengen
Hangzhou Silan Microelectronics
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Key Questions Addressed in this Report
What is the 10-year outlook for the global Power Schottky Diode market?
What factors are driving Power Schottky Diode market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Power Schottky Diode market opportunities vary by end market size?
How does Power Schottky Diode break out by Type, by Application?
Please note: The report will take approximately 2 business days to prepare and deliver.
Table of Contents
224 Pages
- *This is a tentative TOC and the final deliverable is subject to change.*
- 1 Scope of the Report
- 2 Executive Summary
- 3 Global by Company
- 4 World Historic Review for Power Schottky Diode by Geographic Region
- 5 Americas
- 6 APAC
- 7 Europe
- 8 Middle East & Africa
- 9 Market Drivers, Challenges and Trends
- 10 Manufacturing Cost Structure Analysis
- 11 Marketing, Distributors and Customer
- 12 World Forecast Review for Power Schottky Diode by Geographic Region
- 13 Key Players Analysis
- 14 Research Findings and Conclusion
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