Global 6 Inches Conductive SiC Wafer Market Growth 2025-2031

The global 6 Inches Conductive SiC Wafer market size is predicted to grow from US$ 785 million in 2025 to US$ 1963 million in 2031; it is expected to grow at a CAGR of 16.5% from 2025 to 2031.

Silicon carbide is an inorganic substance with the chemical formula SiC. It is made of raw materials such as quartz sand, petroleum coke (or coal coke), and sawdust (salt is needed to produce green silicon carbide) through high-temperature smelting in a resistance furnace. Silicon carbide is a semiconductor that exists in nature in the form of the extremely rare mineral moissanite. Since 1893, it has been mass-produced as powder and crystals for use as abrasives, etc. Among non-oxide high-tech refractory raw materials such as C, N, and B, silicon carbide is the most widely used and economical one, which can be called diamond sand or refractory sand.

Wafer refers to the cutting, grinding, and polishing of crystals along a specific crystal direction to obtain a clean single wafer with specific crystal planes and appropriate electrical, optical, and mechanical properties for growing epitaxial layers. Silicon carbide wafer is the core material of the newly developed wide bandgap semiconductor. The devices made with it have the characteristics of high temperature resistance, high voltage resistance, high frequency, high power, and radiation resistance. It has the advantages of fast switching speed and high efficiency, which can greatly reduce product power consumption, improve energy conversion efficiency, and reduce product volume.

Conductive silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of conductive silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based power devices through homoepitaxial growth, wafer manufacturing, packaging and testing, and are important basic materials for the development of the third-generation semiconductor industry. Conductive silicon carbide wafers can be used to manufacture power devices such as SiC diodes and metal-oxide semiconductor field-effect transistors (MOSFETs) through homoepitaxial growth and device manufacturing processes. These devices are widely used in new energy vehicles, photovoltaic power generation, rail transportation, smart grids, aerospace and other fields.

As the size of silicon carbide wafers continues to increase, 6-inch wafers will become mainstream.

According to the survey and statistics of our company's "Semiconductor Research Center", silicon carbide substrate manufacturers are currently mainly distributed in the United States, Europe, Japan and China, especially in the Chinese market. In recent years, investment in silicon carbide related projects has been very active. It is expected that in the next few years, Chinese manufacturers will play an important role in all links of the silicon carbide industry chain. Conductive substrates are widely used in power devices. Fields such as new energy vehicles, photovoltaics, high-speed rail, and industrial power supplies are its downstream markets. Power devices are very important basic components in the power electronics industry. Conductive silicon carbide substrates are mainly used to manufacture power devices. This type of power device is widely used in many aspects such as power conversion and circuit control of power equipment, and is related to all aspects of economy and life. Silicon carbide power devices can withstand high voltage, high temperature, and low loss. These excellent properties are in line with the requirements of power devices, so they have been rapidly promoted and applied in new energy vehicles, photovoltaic power generation and other fields in recent years.

LP Information, Inc. (LPI) ' newest research report, the “6 Inches Conductive SiC Wafer Industry Forecast” looks at past sales and reviews total world 6 Inches Conductive SiC Wafer sales in 2024, providing a comprehensive analysis by region and market sector of projected 6 Inches Conductive SiC Wafer sales for 2025 through 2031. With 6 Inches Conductive SiC Wafer sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world 6 Inches Conductive SiC Wafer industry.

This Insight Report provides a comprehensive analysis of the global 6 Inches Conductive SiC Wafer landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on 6 Inches Conductive SiC Wafer portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global 6 Inches Conductive SiC Wafer market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for 6 Inches Conductive SiC Wafer and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global 6 Inches Conductive SiC Wafer.

This report presents a comprehensive overview, market shares, and growth opportunities of 6 Inches Conductive SiC Wafer market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Warpage ≤ 40μm
Warpage 40- 60μm
Other

Segmentation by Application:
New Energy Vehicles
Charging Piles
Photovoltaic and Wind Power
Other

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Wolfspeed
SK Siltron
ROHM Group (SiCrystal)
Coherent
Resonac
STMicroelectronics
TankeBlue
SICC
Hebei Synlight Crystal
CETC
San'an Optoelectronics

Key Questions Addressed in this Report

What is the 10-year outlook for the global 6 Inches Conductive SiC Wafer market?

What factors are driving 6 Inches Conductive SiC Wafer market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do 6 Inches Conductive SiC Wafer market opportunities vary by end market size?

How does 6 Inches Conductive SiC Wafer break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.


*This is a tentative TOC and the final deliverable is subject to change.*
1 Scope of the Report
2 Executive Summary
3 Global by Company
4 World Historic Review for 6 Inches Conductive SiC Wafer by Geographic Region
5 Americas
6 APAC
7 Europe
8 Middle East & Africa
9 Market Drivers, Challenges and Trends
10 Manufacturing Cost Structure Analysis
11 Marketing, Distributors and Customer
12 World Forecast Review for 6 Inches Conductive SiC Wafer by Geographic Region
13 Key Players Analysis
14 Research Findings and Conclusion

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