Global Gate Driver ICs for GaN HEMTs Market Growth 2025-2031

The global Gate Driver ICs for GaN HEMTs market size is predicted to grow from US$ 25.6 million in 2025 to US$ 56.1 million in 2031; it is expected to grow at a CAGR of 13.9% from 2025 to 2031.

Gallium Nitride FET-based power conversion systems offer higher efficiency, increased power density, and lower overall system cost than silicon based alternatives. These advantageous characteristics have spurred the presence of an ever increasing ecosystem of power electronics components such as gate drivers, controllers, and passive components that specifically enhance eGaN FET performance.

Currently GaN RF devices are currently in a dominant position, accounting for about 85% of the market share, while GaN power devices currently account for the remaining 15%. GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years.

At present, GaN RF devices are mainly dominated by several companies such as Sumitomo Electric Device Innovations (SEDI), Wolfspeed, Qorvo and NXP; while GaN power devices are dominated by Power Integrations, Inc., Navitas Semiconductor, GaN Systems, Efficient Power Conversion Corporation (EPC), Innoscience, Transphorm Inc. and Infineon, among which Innoscience is the world's largest GaN power device manufacturer.

LP Information, Inc. (LPI) ' newest research report, the “Gate Driver ICs for GaN HEMTs Industry Forecast” looks at past sales and reviews total world Gate Driver ICs for GaN HEMTs sales in 2024, providing a comprehensive analysis by region and market sector of projected Gate Driver ICs for GaN HEMTs sales for 2025 through 2031. With Gate Driver ICs for GaN HEMTs sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Gate Driver ICs for GaN HEMTs industry.

This Insight Report provides a comprehensive analysis of the global Gate Driver ICs for GaN HEMTs landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Gate Driver ICs for GaN HEMTs portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Gate Driver ICs for GaN HEMTs market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Gate Driver ICs for GaN HEMTs and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Gate Driver ICs for GaN HEMTs.

This report presents a comprehensive overview, market shares, and growth opportunities of Gate Driver ICs for GaN HEMTs market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
Gate Driver ICs for GaN SG HEMTs
Gate Driver ICs for GaN GIT HEMTs

Segmentation by Application:
Industrial
Telecom
Data Center
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon Technologies AG
Texas Instruments
STMicroelectronics
Rohm
uPI Semiconductor
Onsemi
Monolithic Power Systems (MPS)
Analog Devices, Inc. (ADI)
Renesas
Chengdu danXi Technology
Innoscience

Key Questions Addressed in this Report

What is the 10-year outlook for the global Gate Driver ICs for GaN HEMTs market?

What factors are driving Gate Driver ICs for GaN HEMTs market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Gate Driver ICs for GaN HEMTs market opportunities vary by end market size?

How does Gate Driver ICs for GaN HEMTs break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.