Global GaN on SiC Epitaxy (Epi) Wafers Market Growth 2025-2031

The global GaN on SiC Epitaxy (Epi) Wafers market size is predicted to grow from US$ 233 million in 2025 to US$ 637 million in 2031; it is expected to grow at a CAGR of 18.3% from 2025 to 2031.

Gallium nitride (GaN) transistors and integrated circuits (ICs) offer fundamental advantages over silicon. GaN-based solutions exceed the performance capabilities of silicon in speed, temperature, and power handling. These improvements offer greater efficiency, significantly reduced size and weight, reduced cost, and improved thermal performance.

Currently the key size is 4 inch SiC Epitaxial Wafer. In next few years, the 6 inch SiC Epitaxial Wafer will grow faster. Now Wolfspeed, Inc is the leader of GaN-on-SiC HEMT Epitaxial wafer in the world.

The GaN RF Devices include Power Amplifier PA, Low Noise Amplifier LNA, RF Switch, etc. Gallium nitride (GaN) technology continues to evolve, pushing the limits of what’s possible with ever-increasing power density, reliability and gain in a reduced size. No longer a technology just for defense/aerospace applications, GaN is enabling higher and higher frequencies in more complex applications, such as phased arrays, radar, base transceiver stations for 5G, cable TV (CATV), VSAT and defense communications. At present, GaN RF devices are mainly dominated by several companies such as Sumitomo Electric Device Innovations (SEDI), Wolfspeed, Qorvo and NXP.

LP Information, Inc. (LPI) ' newest research report, the “GaN on SiC Epitaxy (Epi) Wafers Industry Forecast” looks at past sales and reviews total world GaN on SiC Epitaxy (Epi) Wafers sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN on SiC Epitaxy (Epi) Wafers sales for 2025 through 2031. With GaN on SiC Epitaxy (Epi) Wafers sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN on SiC Epitaxy (Epi) Wafers industry.

This Insight Report provides a comprehensive analysis of the global GaN on SiC Epitaxy (Epi) Wafers landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN on SiC Epitaxy (Epi) Wafers portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN on SiC Epitaxy (Epi) Wafers market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN on SiC Epitaxy (Epi) Wafers and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN on SiC Epitaxy (Epi) Wafers.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN on SiC Epitaxy (Epi) Wafers market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
4 Inch GaN on SiC Epi Wafer
6 Inch GaN on SiC Epi Wafer

Segmentation by Application:
Telecom Infrastructure
Satellite
Military, Defense & Aerospace
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Wolfspeed, Inc
IQE
Soitec (EpiGaN)
Transphorm Inc.
Sumitomo Chemical (SCIOCS)
NTT Advanced Technology (NTT-AT)
DOWA Electronics Materials
BTOZ
Epistar Corp.
CETC 13
CETC 55
Enkris Semiconductor Inc
CorEnergy
Suzhou Nanowin Science and Technology
Shaanxi Yuteng Electronic Technology
Dynax Semiconductor
Sanan Optoelectronics
SweGaN
IVWorks
GaNcool

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN on SiC Epitaxy (Epi) Wafers market?

What factors are driving GaN on SiC Epitaxy (Epi) Wafers market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do GaN on SiC Epitaxy (Epi) Wafers market opportunities vary by end market size?

How does GaN on SiC Epitaxy (Epi) Wafers break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.