Global GaN on Si HEMT Epitaxial Wafer Market Growth 2025-2031

The global GaN on Si HEMT Epitaxial Wafer market size is predicted to grow from US$ 85.8 million in 2025 to US$ 296 million in 2031; it is expected to grow at a CAGR of 22.9% from 2025 to 2031.

Due to the use of Si substrate materials, GaN can be epitaxially grown on large-diameter silicon wafers and has the advantages of being compatible with traditional Si processes, making it an ideal choice for the development of power semiconductor technology. There are two types of GaN on Si HEMT epitaxy: normally-on, depletion-type (D-type) and normally-off, enhancement-type (E-type).

The main feature of GaN on Si is that Si is the substrate and GaN is the epitaxy. Silicon substrates are cheap, low in cost, can be produced on a large scale, have high energy density, and the size of the wafer can be made very large. Currently, the size of the wafer is 8 inches, but it is mainly 6 inches.

LP Information, Inc. (LPI) ' newest research report, the “GaN on Si HEMT Epitaxial Wafer Industry Forecast” looks at past sales and reviews total world GaN on Si HEMT Epitaxial Wafer sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN on Si HEMT Epitaxial Wafer sales for 2025 through 2031. With GaN on Si HEMT Epitaxial Wafer sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN on Si HEMT Epitaxial Wafer industry.

This Insight Report provides a comprehensive analysis of the global GaN on Si HEMT Epitaxial Wafer landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN on Si HEMT Epitaxial Wafer portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN on Si HEMT Epitaxial Wafer market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN on Si HEMT Epitaxial Wafer and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN on Si HEMT Epitaxial Wafer.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN on Si HEMT Epitaxial Wafer market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
4 Inch
6 Inch
Others

Segmentation by Application:
GaN RF Devices
GaN Power Devices

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
IQE
DOWA Electronics
CETC13
CETC55
Soitec (EpiGaN)
NTT-AT
BTOZ
Episil-Precision Inc
Epistar Corp
Enkris Semiconductor Inc
Innoscience
Runxin Microelectronics
CorEnergy
Qingdao Cohenius Microelectronics
Shaanxi Yuteng Electronic Technology

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN on Si HEMT Epitaxial Wafer market?

What factors are driving GaN on Si HEMT Epitaxial Wafer market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do GaN on Si HEMT Epitaxial Wafer market opportunities vary by end market size?

How does GaN on Si HEMT Epitaxial Wafer break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.