Global GaN Power Discrete Device Market Growth 2025-2031

The global GaN Power Discrete Device market size is predicted to grow from US$ 213 million in 2025 to US$ 549 million in 2031; it is expected to grow at a CAGR of 17.1% from 2025 to 2031.

GaN power discrete devices have excellent physical characteristics such as low conduction loss and high current density, which can significantly reduce the power loss and cooling load of the communication system and greatly reduce the operating cost. It has been widely used in microwave integrated circuits, high voltage and high power fields. Gallium nitride high power semiconductor devices also began to be used in inverter, voltage regulator, transformer, wireless charging and other fields.

650V is preferred for AC-DC conversion in power supply applications, and the penetration rate in the consumer and datacom/telecom applications is expected to increase. The low voltage ratings – under 200V – are preferred for high-end and high-performance LIDAR, motor drive, and DC-DC applications, such as in electric vehicles, datacom, telecom, and Aerospace. Under 200V, GaN faces stronger competition with Si devices in terms of price. Key advantage is tohave low losses which is achieved with WLSCP, as of 2023, only EPC and Innoscience offer this packaging. The entry of more players and ASP decrease will benefit to higher growth for low voltage Power GaN market.

LP Information, Inc. (LPI) ' newest research report, the “GaN Power Discrete Device Industry Forecast” looks at past sales and reviews total world GaN Power Discrete Device sales in 2024, providing a comprehensive analysis by region and market sector of projected GaN Power Discrete Device sales for 2025 through 2031. With GaN Power Discrete Device sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world GaN Power Discrete Device industry.

This Insight Report provides a comprehensive analysis of the global GaN Power Discrete Device landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on GaN Power Discrete Device portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global GaN Power Discrete Device market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for GaN Power Discrete Device and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global GaN Power Discrete Device.

This report presents a comprehensive overview, market shares, and growth opportunities of GaN Power Discrete Device market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
GaN Power >600V
GaN Power <200V

Segmentation by Application:
Consumer Electronics
IT & Telecommunications
Automotive
Aerospace & Defense
Others

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Innoscience
Navitas Semiconductor
Power Integrations, Inc.
Infineon (GaN Systems)
STMicroelectronics
Efficient Power Conversion Corporation (EPC)
Renesas Electronics (Transphorm)
Wolfspeed, Inc
onsemi
Microchip Technology
Rohm
NXP Semiconductors
Toshiba
Texas Instruments
Alpha and Omega Semiconductor Limited (AOS)
Nexperia
Epistar Corp.
Cambridge GaN Devices (CGD)
Wise Integration
Ampleon
GaNext
Chengdu DanXi Technology
Southchip Semiconductor Technology
Panasonic
Toyoda Gosei
China Resources Microelectronics Limited
CorEnergy
Dynax Semiconductor
Sanan Optoelectronics
Hangzhou Silan Microelectronics
Guangdong ZIENER Technology
CETC 13
CETC 55
Qingdao Cohenius Microelectronics
Nanjing Xinkansen Technology
GaNPower
CloudSemi

Key Questions Addressed in this Report

What is the 10-year outlook for the global GaN Power Discrete Device market?

What factors are driving GaN Power Discrete Device market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do GaN Power Discrete Device market opportunities vary by end market size?

How does GaN Power Discrete Device break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.