The global FeRAM market size is predicted to grow from US$ 1078 million in 2025 to US$ 1661 million in 2031; it is expected to grow at a CAGR of 7.5% from 2025 to 2031.
Ferroelectric random access memory (FeRAM) is a nonvolatile memory, in which data are stored using hysteretic P-E (polarization vs. electric field) characteristics in a ferroelectric film. Ferroelectric random access memories (FeRAMs) are widely used in IC (integrated circuits) cards and RF (radio frequency) tags. Their features are (1) nonvolatile data storage (The stored data do not disappear even if electricity is turned off.), (2) the lowest power consumption among various semi-conductor memories, and (3) the operation speed as fast as that of DRAMs (dynamic RAMs).
From the perspective of manufacturers, globally, the core FRAM memory manufacturers mainly include RAMXEED (formerly Fujitsu), Infineon (Cypress), Texas Instruments, ROHM (Lapis), and Sunming Memory, among others. In 2023, the top two global manufacturers were RAMXEED (formerly Fujitsu) and Infineon (Cypress), which together held approximately 90% of the market share. It is expected that in the coming years, with technological breakthroughs from emerging companies, more enterprises will enter the market, competing with existing manufacturers for market share through product differentiation and lower prices.
In terms of product types, 4K-256K holds a significant position, with its market share expected to reach 68% by 2031. Medium and low-capacity memories, due to their high technological maturity, have been widely used in automotive electronics, instrumentation, industrial automation, and other fields. In the future, FRAM memory is expected to develop towards higher capacity and faster speeds, anticipating broader applications in more high-end markets.
Regarding the market application of products, FRAM memory has shown strong growth potential in the automotive electronics and charging station markets. With the acceleration of automotive intelligence and electrification trends, the demand for high-speed, high-reliability, and low-power memory in the automotive market is increasingly growing. FRAM memory, with its unique advantages such as fast read/write speeds, low power consumption, and long data retention, has become one of the preferred choices in the automotive field. Automotive electronics and charging stations occupy the most important position in the downstream applications of FRAM memory. The share of automotive electronics and charging stations was about 27% in 2024, with a CAGR of approximately 9.6% expected in the coming years. Additionally, the growth in demand from other downstream markets also provides a solid foundation for the prosperous development of the FRAM memory industry.
LP Information, Inc. (LPI) ' newest research report, the “FeRAM Industry Forecast” looks at past sales and reviews total world FeRAM sales in 2024, providing a comprehensive analysis by region and market sector of projected FeRAM sales for 2025 through 2031. With FeRAM sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world FeRAM industry.
This Insight Report provides a comprehensive analysis of the global FeRAM landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on FeRAM portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global FeRAM market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for FeRAM and breaks down the forecast by Memory Size, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global FeRAM.
This report presents a comprehensive overview, market shares, and growth opportunities of FeRAM market by product type, application, key manufacturers and key regions and countries.
Segmentation by Memory Size:
4K to 256K
512K to 2M
Above 2M
Segmentation by Application:
Automotive Electronics and Charging Piles
Instruments and Meters
Industrial Automation
Medical
Telecommunication
Consumer Electronics
Others
This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
RAMXEED (Former Fujitsu)
Infineon
Texas Instruments
ROHM (Lapis)
Wuxi Smart Memories
Key Questions Addressed in this Report
What is the 10-year outlook for the global FeRAM market?
What factors are driving FeRAM market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do FeRAM market opportunities vary by end market size?
How does FeRAM break out by Memory Size, by Application?
Please note: The report will take approximately 2 business days to prepare and deliver.
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