Global Automotive-grade SiC Devices (Discrete) Market Growth 2025-2031

The global Automotive-grade SiC Devices (Discrete) market size is predicted to grow from US$ 1561 million in 2025 to US$ 5795 million in 2031; it is expected to grow at a CAGR of 24.4% from 2025 to 2031.

This report studies the Automotive-grade SiC Devices (Discrete), key segments cover SiC MOSFET discrete, SiC Schottky Barrier Diodes discrete, SiC FETs, SiC JFETs etc., used in EV Main Inverter (Electric Traction), OBC and DC/DC.

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent. The key players of SiC MOSFET Discrete are STMicroelectronics, Infineon, Wolfspeed, Rohm, and CETC 55, etc. The top five players hold a share over 80 percent. The key players of SiC SBD are STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), and San'an Optoelectronics, etc. The top five players hold a share over 70 percent. Automotive is the largest market, hold a share over 65%, mainly used in OBC, DC/DC Converter, etc.

Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.

LP Information, Inc. (LPI) ' newest research report, the “Automotive-grade SiC Devices (Discrete) Industry Forecast” looks at past sales and reviews total world Automotive-grade SiC Devices (Discrete) sales in 2024, providing a comprehensive analysis by region and market sector of projected Automotive-grade SiC Devices (Discrete) sales for 2025 through 2031. With Automotive-grade SiC Devices (Discrete) sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Automotive-grade SiC Devices (Discrete) industry.

This Insight Report provides a comprehensive analysis of the global Automotive-grade SiC Devices (Discrete) landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Automotive-grade SiC Devices (Discrete) portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Automotive-grade SiC Devices (Discrete) market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Automotive-grade SiC Devices (Discrete) and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Automotive-grade SiC Devices (Discrete).

This report presents a comprehensive overview, market shares, and growth opportunities of Automotive-grade SiC Devices (Discrete) market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
SiC MOSFET Discrete
SiC Diode Discrete (SiC SBD)

Segmentation by Application:
Main Inverter (Electric Traction)
OBC
DC/DC Converter for EV/HEV

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric (Vincotech)
Semikron Danfoss
Fuji Electric
Navitas (GeneSiC)
Toshiba
Qorvo (UnitedSiC)
San'an Optoelectronics
Littelfuse (IXYS)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
SanRex
Alpha & Omega Semiconductor
Bosch
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
StarPower
Yangzhou Yangjie Electronic Technology
Guangdong AccoPower Semiconductor
Changzhou Galaxy Century Microelectronics
Hangzhou Silan Microelectronics
Cissoid
SK powertech
InventChip Technology
Hebei Sinopack Electronic Technology
Oriental Semiconductor
Jilin Sino-Microelectronics
PN Junction Semiconductor (Hangzhou)

Key Questions Addressed in this Report

What is the 10-year outlook for the global Automotive-grade SiC Devices (Discrete) market?

What factors are driving Automotive-grade SiC Devices (Discrete) market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Automotive-grade SiC Devices (Discrete) market opportunities vary by end market size?

How does Automotive-grade SiC Devices (Discrete) break out by Type, by Application?

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