Global Automotive Discrete IGBT Market Growth 2025-2031

The global Automotive Discrete IGBT market size is predicted to grow from US$ 748 million in 2025 to US$ 1452 million in 2031; it is expected to grow at a CAGR of 11.7% from 2025 to 2031.

United States market for Automotive Discrete IGBT is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

China market for Automotive Discrete IGBT is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Europe market for Automotive Discrete IGBT is estimated to increase from US$ million in 2024 to US$ million by 2031, at a CAGR of % from 2025 through 2031.

Global key Automotive Discrete IGBT players cover Infineon Technologies AG, Fuji Electric, ON Semiconductor, Mitsubishi Electric Corporation, STMicroelectronics, etc. In terms of revenue, the global two largest companies occupied for a share nearly % in 2024.

LP Information, Inc. (LPI) ' newest research report, the “Automotive Discrete IGBT Industry Forecast” looks at past sales and reviews total world Automotive Discrete IGBT sales in 2024, providing a comprehensive analysis by region and market sector of projected Automotive Discrete IGBT sales for 2025 through 2031. With Automotive Discrete IGBT sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Automotive Discrete IGBT industry.

This Insight Report provides a comprehensive analysis of the global Automotive Discrete IGBT landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Automotive Discrete IGBT portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms’ unique position in an accelerating global Automotive Discrete IGBT market.

This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Automotive Discrete IGBT and breaks down the forecast by Type, by Application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Automotive Discrete IGBT.

This report presents a comprehensive overview, market shares, and growth opportunities of Automotive Discrete IGBT market by product type, application, key manufacturers and key regions and countries.

Segmentation by Type:
High Power
Medium Power
Low Power

Segmentation by Application:
Electric Vehicles
Hybrid Electric Vehicles

This report also splits the market by region:
Americas
United States
Canada
Mexico
Brazil
APAC
China
Japan
Korea
Southeast Asia
India
Australia
Europe
Germany
France
UK
Italy
Russia
Middle East & Africa
Egypt
South Africa
Israel
Turkey
GCC Countries

The below companies that are profiled have been selected based on inputs gathered from primary experts and analysing the company's coverage, product portfolio, its market penetration.
Infineon Technologies AG
Fuji Electric
ON Semiconductor
Mitsubishi Electric Corporation
STMicroelectronics
Renesas Electronics Corporation
Vishay Intertechnology
ABB
SEMIKRON
Hitachi

Key Questions Addressed in this Report

What is the 10-year outlook for the global Automotive Discrete IGBT market?

What factors are driving Automotive Discrete IGBT market growth, globally and by region?

Which technologies are poised for the fastest growth by market and region?

How do Automotive Discrete IGBT market opportunities vary by end market size?

How does Automotive Discrete IGBT break out by Type, by Application?

Please note: The report will take approximately 2 business days to prepare and deliver.