Global Silicon Carbide (SiC) Substrate Market 2026 by Manufacturers, Regions, Type and Application, Forecast to 2032
Description
According to our (Global Info Research) latest study, the global Silicon Carbide (SiC) Substrate market size was valued at US$ 1214 million in 2025 and is forecast to a readjusted size of US$ 3048 million by 2032 with a CAGR of 14.2% during review period.
Silicon carbide (SiC) substrates are the core foundation of third-generation semiconductor materials, grown from silicon carbide single crystals. They feature a wide bandgap (3.26 eV), high critical breakdown field strength (3 MV/cm), and high thermal conductivity (4.9 W/cm・K), making them suitable for high-temperature, high-frequency, and high-power applications. Their primary function is to serve as the physical substrate for SiC power devices (such as MOSFETs and diodes), with functional layers formed through epitaxial growth.
The boom in new energy vehicles: The widespread adoption of 800V high-voltage platforms is driving the penetration rate of silicon carbide main drive inverters from 15% in 2023 to 45% in 2026, with models such as the Xpeng G6 and Zeekr X already featuring them as standard equipment.
Photovoltaic energy storage revolution: Huawei's 200kW string inverter adopts a fully silicon carbide solution, achieving an efficiency of 99.1%, an improvement of 0.8 percentage points over silicon-based IGBTs; CATL's energy storage system incorporates silicon carbide DC/DC converters, reducing volume by 40%.
Strong Policy Support: China offers a 30% procurement subsidy for domestically produced equipment such as crystal growth furnaces and ion implanters; the U.S. CHIPS Act provides funding support for silicon carbide projects (though there is uncertainty regarding the policy beyond 2025).
Technical breakthrough directions
Size upgrade: The cost per wafer for 8-inch substrates is 35% lower than for 6-inch substrates. Companies like Wolfspeed and TianYue Advanced have achieved mass production, but the global average yield rate remains below 50%. Breakthroughs are needed in crystal growth efficiency (reducing the PVT method cycle from 100 hours to 70 hours) and microchannel density (<0.5 cm⁻²).
Material Innovation:
Liquid Phase Epitaxy (LPE): Tianyue Advanced has increased growth speed by 3 times using LPE, with yield rates approaching international standards.
Heterogeneous Integration: Coherent has developed SiC/GaN heterogeneous integration technology, achieving efficiency breakthroughs exceeding 90% in 5G base stations.
As the “foundational material” of the energy revolution, SiC substrates are transitioning from the technology validation phase to a period of scaled-up production. Despite challenges such as equipment dependency and yield bottlenecks, 8-inch mass production, material innovation, and policy support will drive rapid industry growth. Over the next five years, Chinese manufacturers are expected to leverage cost advantages and capacity expansion to gradually break the monopoly held by Western countries and become a core force in the global SiC supply chain.
This report is a detailed and comprehensive analysis for global Silicon Carbide (SiC) Substrate market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Silicon Carbide (SiC) Substrate market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global Silicon Carbide (SiC) Substrate market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global Silicon Carbide (SiC) Substrate market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global Silicon Carbide (SiC) Substrate market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2021-2026
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Silicon Carbide (SiC) Substrate
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Silicon Carbide (SiC) Substrate market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Cree (Wolfspeed), II-VI Advanced Materials, ROHM, Norstel, SICC Materials, Showa Denko, TankeBlue Semiconductor, SK Siltron, JSG, Semisic, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Silicon Carbide (SiC) Substrate market is split by Type and by Application. For the period 2021-2032, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
4 Inch
6 Inch
8 Inch
Market segment by Application
Power Device
RF Devices
Others
Major players covered
Cree (Wolfspeed)
II-VI Advanced Materials
ROHM
Norstel
SICC Materials
Showa Denko
TankeBlue Semiconductor
SK Siltron
JSG
Semisic
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Silicon Carbide (SiC) Substrate product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Silicon Carbide (SiC) Substrate, with price, sales quantity, revenue, and global market share of Silicon Carbide (SiC) Substrate from 2021 to 2026.
Chapter 3, the Silicon Carbide (SiC) Substrate competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Silicon Carbide (SiC) Substrate breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2021 to 2026.and Silicon Carbide (SiC) Substrate market forecast, by regions, by Type, and by Application, with sales and revenue, from 2027 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Silicon Carbide (SiC) Substrate.
Chapter 14 and 15, to describe Silicon Carbide (SiC) Substrate sales channel, distributors, customers, research findings and conclusion.
Silicon carbide (SiC) substrates are the core foundation of third-generation semiconductor materials, grown from silicon carbide single crystals. They feature a wide bandgap (3.26 eV), high critical breakdown field strength (3 MV/cm), and high thermal conductivity (4.9 W/cm・K), making them suitable for high-temperature, high-frequency, and high-power applications. Their primary function is to serve as the physical substrate for SiC power devices (such as MOSFETs and diodes), with functional layers formed through epitaxial growth.
The boom in new energy vehicles: The widespread adoption of 800V high-voltage platforms is driving the penetration rate of silicon carbide main drive inverters from 15% in 2023 to 45% in 2026, with models such as the Xpeng G6 and Zeekr X already featuring them as standard equipment.
Photovoltaic energy storage revolution: Huawei's 200kW string inverter adopts a fully silicon carbide solution, achieving an efficiency of 99.1%, an improvement of 0.8 percentage points over silicon-based IGBTs; CATL's energy storage system incorporates silicon carbide DC/DC converters, reducing volume by 40%.
Strong Policy Support: China offers a 30% procurement subsidy for domestically produced equipment such as crystal growth furnaces and ion implanters; the U.S. CHIPS Act provides funding support for silicon carbide projects (though there is uncertainty regarding the policy beyond 2025).
Technical breakthrough directions
Size upgrade: The cost per wafer for 8-inch substrates is 35% lower than for 6-inch substrates. Companies like Wolfspeed and TianYue Advanced have achieved mass production, but the global average yield rate remains below 50%. Breakthroughs are needed in crystal growth efficiency (reducing the PVT method cycle from 100 hours to 70 hours) and microchannel density (<0.5 cm⁻²).
Material Innovation:
Liquid Phase Epitaxy (LPE): Tianyue Advanced has increased growth speed by 3 times using LPE, with yield rates approaching international standards.
Heterogeneous Integration: Coherent has developed SiC/GaN heterogeneous integration technology, achieving efficiency breakthroughs exceeding 90% in 5G base stations.
As the “foundational material” of the energy revolution, SiC substrates are transitioning from the technology validation phase to a period of scaled-up production. Despite challenges such as equipment dependency and yield bottlenecks, 8-inch mass production, material innovation, and policy support will drive rapid industry growth. Over the next five years, Chinese manufacturers are expected to leverage cost advantages and capacity expansion to gradually break the monopoly held by Western countries and become a core force in the global SiC supply chain.
This report is a detailed and comprehensive analysis for global Silicon Carbide (SiC) Substrate market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Silicon Carbide (SiC) Substrate market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global Silicon Carbide (SiC) Substrate market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global Silicon Carbide (SiC) Substrate market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global Silicon Carbide (SiC) Substrate market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2021-2026
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Silicon Carbide (SiC) Substrate
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Silicon Carbide (SiC) Substrate market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Cree (Wolfspeed), II-VI Advanced Materials, ROHM, Norstel, SICC Materials, Showa Denko, TankeBlue Semiconductor, SK Siltron, JSG, Semisic, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Silicon Carbide (SiC) Substrate market is split by Type and by Application. For the period 2021-2032, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
4 Inch
6 Inch
8 Inch
Market segment by Application
Power Device
RF Devices
Others
Major players covered
Cree (Wolfspeed)
II-VI Advanced Materials
ROHM
Norstel
SICC Materials
Showa Denko
TankeBlue Semiconductor
SK Siltron
JSG
Semisic
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Silicon Carbide (SiC) Substrate product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Silicon Carbide (SiC) Substrate, with price, sales quantity, revenue, and global market share of Silicon Carbide (SiC) Substrate from 2021 to 2026.
Chapter 3, the Silicon Carbide (SiC) Substrate competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Silicon Carbide (SiC) Substrate breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2021 to 2026.and Silicon Carbide (SiC) Substrate market forecast, by regions, by Type, and by Application, with sales and revenue, from 2027 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Silicon Carbide (SiC) Substrate.
Chapter 14 and 15, to describe Silicon Carbide (SiC) Substrate sales channel, distributors, customers, research findings and conclusion.
Table of Contents
104 Pages
- 1 Market Overview
- 2 Manufacturers Profiles
- 3 Competitive Environment: Silicon Carbide (SiC) Substrate by Manufacturer
- 4 Consumption Analysis by Region
- 5 Market Segment by Type
- 6 Market Segment by Application
- 7 North America
- 8 Europe
- 9 Asia-Pacific
- 10 South America
- 11 Middle East & Africa
- 12 Market Dynamics
- 13 Raw Material and Industry Chain
- 14 Shipments by Distribution Channel
- 15 Research Findings and Conclusion
- 16 Appendix
Pricing
Currency Rates
Questions or Comments?
Our team has the ability to search within reports to verify it suits your needs. We can also help maximize your budget by finding sections of reports you can purchase.
