Global SiC MOSFET Chips (Devices) and Module Market 2026 by Manufacturers, Regions, Type and Application, Forecast to 2032
Description
According to our (Global Info Research) latest study, the global SiC MOSFET Chips (Devices) and Module market size was valued at US$ 1539 million in 2025 and is forecast to a readjusted size of US$ 7617 million by 2032 with a CAGR of 26.0% during review period.
SiC MOSFET chips, or silicon carbide metal-oxide-semiconductor field-effect transistor chips, are a new type of power semiconductor chip manufactured using silicon carbide (SiC) material. Compared to traditional silicon (Si) materials, SiC has a wide bandgap characteristic (bandgap width of approximately 3.26 eV, while silicon has 1.12 eV), which endows SiC MOSFET chips with a series of superior performance characteristics.
SiC MOSFET devices are complete semiconductor devices composed of SiC MOSFET chips as the core, along with necessary packaging materials, leads, etc. Packaging is critical for SiC MOSFET devices, as it not only provides physical protection for the chip, preventing mechanical damage and moisture corrosion, but also enables electrical connection between the chip and external circuits. Common packaging forms for SiC MOSFET devices include TO-247 and TO-220. Taking the TO-247 packaging as an example, it has excellent heat dissipation performance, enabling rapid dissipation of heat generated during chip operation, ensuring stable device operation in high-temperature environments.
SiC MOSFET modules integrate multiple SiC MOSFET devices and other auxiliary components such as diodes into a single power module through a specific circuit topology. This integrated design offers numerous advantages. On one hand, the optimized circuit connections between devices within the module enable higher power density. For example, in the main drive inverter of new energy vehicles, using SiC MOSFET modules can achieve higher power output within a limited space, contributing to the vehicle's miniaturization and lightweight design. On the other hand, the internal layout and connections of the module are carefully designed to effectively reduce stray inductance, thereby enhancing system stability and reliability. Stray inductance can generate voltage spikes during switching processes, affecting the normal operation of devices. However, SiC MOSFET modules mitigate this impact through rational layout and routing.
The explosive growth of the new energy vehicle industry: The rapid development of the new energy vehicle market is the key driver behind the growth of the SiC MOSFET chip, device, and module markets. As countries worldwide increasingly prioritize energy conservation, emissions reduction, and environmental protection, new energy vehicles have become the mainstream direction for automotive industry development. In particular, the widespread adoption of 800V high-voltage platforms has imposed higher performance requirements on power devices. SiC MOSFETs, with their advantages of low on-resistance, high switching frequency, and high voltage withstand capability, have become the ideal choice for main drive inverters in 800V high-voltage platforms. Main drive inverters using SiC MOSFET modules can increase the range of new energy vehicles by 5%–10% while reducing charging time to 15–20 minutes, significantly enhancing the user experience. For example, Tesla was the first to adopt SiC MOSFET modules in its Model 3 and Model Y vehicles, and many other automakers have since followed suit, driving rapid growth in demand for SiC MOSFETs across the entire new energy vehicle industry.
Rapid development of the photovoltaic and energy storage industries: In the photovoltaic sector, global demand for renewable energy continues to rise, driving sustained growth in photovoltaic power generation capacity. The application of SiC MOSFETs in photovoltaic inverters can significantly improve inverter conversion efficiency and reduce energy loss. Traditional silicon-based IGBT inverters typically achieve conversion efficiencies of 96%–98%, while inverters using SiC MOSFETs can exceed 99% efficiency, meaning they can generate more electricity under the same lighting conditions. Additionally, the high-frequency characteristics of SiC MOSFETs enable the reduction in size and weight of passive components such as inductors and capacitors within inverters, thereby lowering system costs. In the energy storage sector, as the energy storage market continues to expand, the application of SiC MOSFETs in energy storage converters (PCS) is becoming increasingly widespread. They enhance the charging and discharging efficiency of energy storage systems, extend battery lifespan, and improve system stability and reliability. For example, in some large-scale energy storage power plant projects, energy storage converters using SiC MOSFET modules can achieve charging and discharging efficiencies of over 98%, significantly improving the economic benefits of energy storage systems.
Industrial energy conservation and power system upgrade requirements: In the industrial sector, there is an urgent need for energy conservation and consumption reduction in various industrial equipment such as motor drives and power converters. The application of SiC MOSFETs can significantly reduce the energy consumption of industrial equipment and improve production efficiency. For example, in industrial motor drive systems, replacing traditional silicon-based devices with SiC MOSFETs can increase system efficiency by 3%–5%, saving a significant amount of electricity annually. In the power system sector, as smart grid construction progresses, the performance and reliability requirements for power electronic devices continue to rise. SiC MOSFETs hold broad application prospects in fields such as high-voltage direct current transmission (HVDC) and flexible alternating current transmission systems (FACTS). They can enhance power system transmission efficiency, strengthen grid stability and controllability, and meet the evolving demands of power systems toward higher voltages, larger capacities, and greater intelligence.
This report is a detailed and comprehensive analysis for global SiC MOSFET Chips (Devices) and Module market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global SiC MOSFET Chips (Devices) and Module market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global SiC MOSFET Chips (Devices) and Module market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global SiC MOSFET Chips (Devices) and Module market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global SiC MOSFET Chips (Devices) and Module market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2021-2026
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for SiC MOSFET Chips (Devices) and Module
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global SiC MOSFET Chips (Devices) and Module market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Wolfspeed, Infineon Technologies, STMicroelectronics, ROHM, Semiconductor Components Industries, LLC, Littelfuse, Microchip, Mitsubishi Electric, GeneSiC Semiconductor Inc., Shenzhen BASiC Semiconductor LTD, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
SiC MOSFET Chips (Devices) and Module market is split by Type and by Application. For the period 2021-2032, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Sic MOSFET Chip and Device
Sic MOSFET Module
Market segment by Application
Car
Industrial
Photovoltaic (pv)
Other
Major players covered
Wolfspeed
Infineon Technologies
STMicroelectronics
ROHM
Semiconductor Components Industries, LLC
Littelfuse
Microchip
Mitsubishi Electric
GeneSiC Semiconductor Inc.
Shenzhen BASiC Semiconductor LTD
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC MOSFET Chips (Devices) and Module product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC MOSFET Chips (Devices) and Module, with price, sales quantity, revenue, and global market share of SiC MOSFET Chips (Devices) and Module from 2021 to 2026.
Chapter 3, the SiC MOSFET Chips (Devices) and Module competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC MOSFET Chips (Devices) and Module breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2021 to 2026.and SiC MOSFET Chips (Devices) and Module market forecast, by regions, by Type, and by Application, with sales and revenue, from 2027 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC MOSFET Chips (Devices) and Module.
Chapter 14 and 15, to describe SiC MOSFET Chips (Devices) and Module sales channel, distributors, customers, research findings and conclusion.
SiC MOSFET chips, or silicon carbide metal-oxide-semiconductor field-effect transistor chips, are a new type of power semiconductor chip manufactured using silicon carbide (SiC) material. Compared to traditional silicon (Si) materials, SiC has a wide bandgap characteristic (bandgap width of approximately 3.26 eV, while silicon has 1.12 eV), which endows SiC MOSFET chips with a series of superior performance characteristics.
SiC MOSFET devices are complete semiconductor devices composed of SiC MOSFET chips as the core, along with necessary packaging materials, leads, etc. Packaging is critical for SiC MOSFET devices, as it not only provides physical protection for the chip, preventing mechanical damage and moisture corrosion, but also enables electrical connection between the chip and external circuits. Common packaging forms for SiC MOSFET devices include TO-247 and TO-220. Taking the TO-247 packaging as an example, it has excellent heat dissipation performance, enabling rapid dissipation of heat generated during chip operation, ensuring stable device operation in high-temperature environments.
SiC MOSFET modules integrate multiple SiC MOSFET devices and other auxiliary components such as diodes into a single power module through a specific circuit topology. This integrated design offers numerous advantages. On one hand, the optimized circuit connections between devices within the module enable higher power density. For example, in the main drive inverter of new energy vehicles, using SiC MOSFET modules can achieve higher power output within a limited space, contributing to the vehicle's miniaturization and lightweight design. On the other hand, the internal layout and connections of the module are carefully designed to effectively reduce stray inductance, thereby enhancing system stability and reliability. Stray inductance can generate voltage spikes during switching processes, affecting the normal operation of devices. However, SiC MOSFET modules mitigate this impact through rational layout and routing.
The explosive growth of the new energy vehicle industry: The rapid development of the new energy vehicle market is the key driver behind the growth of the SiC MOSFET chip, device, and module markets. As countries worldwide increasingly prioritize energy conservation, emissions reduction, and environmental protection, new energy vehicles have become the mainstream direction for automotive industry development. In particular, the widespread adoption of 800V high-voltage platforms has imposed higher performance requirements on power devices. SiC MOSFETs, with their advantages of low on-resistance, high switching frequency, and high voltage withstand capability, have become the ideal choice for main drive inverters in 800V high-voltage platforms. Main drive inverters using SiC MOSFET modules can increase the range of new energy vehicles by 5%–10% while reducing charging time to 15–20 minutes, significantly enhancing the user experience. For example, Tesla was the first to adopt SiC MOSFET modules in its Model 3 and Model Y vehicles, and many other automakers have since followed suit, driving rapid growth in demand for SiC MOSFETs across the entire new energy vehicle industry.
Rapid development of the photovoltaic and energy storage industries: In the photovoltaic sector, global demand for renewable energy continues to rise, driving sustained growth in photovoltaic power generation capacity. The application of SiC MOSFETs in photovoltaic inverters can significantly improve inverter conversion efficiency and reduce energy loss. Traditional silicon-based IGBT inverters typically achieve conversion efficiencies of 96%–98%, while inverters using SiC MOSFETs can exceed 99% efficiency, meaning they can generate more electricity under the same lighting conditions. Additionally, the high-frequency characteristics of SiC MOSFETs enable the reduction in size and weight of passive components such as inductors and capacitors within inverters, thereby lowering system costs. In the energy storage sector, as the energy storage market continues to expand, the application of SiC MOSFETs in energy storage converters (PCS) is becoming increasingly widespread. They enhance the charging and discharging efficiency of energy storage systems, extend battery lifespan, and improve system stability and reliability. For example, in some large-scale energy storage power plant projects, energy storage converters using SiC MOSFET modules can achieve charging and discharging efficiencies of over 98%, significantly improving the economic benefits of energy storage systems.
Industrial energy conservation and power system upgrade requirements: In the industrial sector, there is an urgent need for energy conservation and consumption reduction in various industrial equipment such as motor drives and power converters. The application of SiC MOSFETs can significantly reduce the energy consumption of industrial equipment and improve production efficiency. For example, in industrial motor drive systems, replacing traditional silicon-based devices with SiC MOSFETs can increase system efficiency by 3%–5%, saving a significant amount of electricity annually. In the power system sector, as smart grid construction progresses, the performance and reliability requirements for power electronic devices continue to rise. SiC MOSFETs hold broad application prospects in fields such as high-voltage direct current transmission (HVDC) and flexible alternating current transmission systems (FACTS). They can enhance power system transmission efficiency, strengthen grid stability and controllability, and meet the evolving demands of power systems toward higher voltages, larger capacities, and greater intelligence.
This report is a detailed and comprehensive analysis for global SiC MOSFET Chips (Devices) and Module market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global SiC MOSFET Chips (Devices) and Module market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global SiC MOSFET Chips (Devices) and Module market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global SiC MOSFET Chips (Devices) and Module market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2021-2032
Global SiC MOSFET Chips (Devices) and Module market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2021-2026
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for SiC MOSFET Chips (Devices) and Module
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global SiC MOSFET Chips (Devices) and Module market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Wolfspeed, Infineon Technologies, STMicroelectronics, ROHM, Semiconductor Components Industries, LLC, Littelfuse, Microchip, Mitsubishi Electric, GeneSiC Semiconductor Inc., Shenzhen BASiC Semiconductor LTD, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
SiC MOSFET Chips (Devices) and Module market is split by Type and by Application. For the period 2021-2032, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Sic MOSFET Chip and Device
Sic MOSFET Module
Market segment by Application
Car
Industrial
Photovoltaic (pv)
Other
Major players covered
Wolfspeed
Infineon Technologies
STMicroelectronics
ROHM
Semiconductor Components Industries, LLC
Littelfuse
Microchip
Mitsubishi Electric
GeneSiC Semiconductor Inc.
Shenzhen BASiC Semiconductor LTD
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC MOSFET Chips (Devices) and Module product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC MOSFET Chips (Devices) and Module, with price, sales quantity, revenue, and global market share of SiC MOSFET Chips (Devices) and Module from 2021 to 2026.
Chapter 3, the SiC MOSFET Chips (Devices) and Module competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC MOSFET Chips (Devices) and Module breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2021 to 2032.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2021 to 2032.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2021 to 2026.and SiC MOSFET Chips (Devices) and Module market forecast, by regions, by Type, and by Application, with sales and revenue, from 2027 to 2032.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC MOSFET Chips (Devices) and Module.
Chapter 14 and 15, to describe SiC MOSFET Chips (Devices) and Module sales channel, distributors, customers, research findings and conclusion.
Table of Contents
102 Pages
- 1 Market Overview
- 2 Manufacturers Profiles
- 3 Competitive Environment: SiC MOSFET Chips (Devices) and Module by Manufacturer
- 4 Consumption Analysis by Region
- 5 Market Segment by Type
- 6 Market Segment by Application
- 7 North America
- 8 Europe
- 9 Asia-Pacific
- 10 South America
- 11 Middle East & Africa
- 12 Market Dynamics
- 13 Raw Material and Industry Chain
- 14 Shipments by Distribution Channel
- 15 Research Findings and Conclusion
- 16 Appendix
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