Global SiC and GaN Power Semiconductor Supply, Demand and Key Producers, 2026-2032
Description
The global SiC and GaN Power Semiconductor market size is expected to reach $ 25140 million by 2032, rising at a market growth of 20.5% CAGR during the forecast period (2026-2032).
This report studies SiC power devices and GaN devices. The SiC power devices including SiC MOSFET Module, SiC MOSFET Discrete and SiC diode. The GaN devices include GaN RF devices and GaN power devices.
Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices.
GaN has emerged as a revolutionary semiconductor material with several distinct advantages over incumbent technologies in both power electronics and radio frequency (RF) applications. GaN’s versatility, combined with its ability to operate at high frequencies and handle high power densities, positions it as a pivotal technology driving innovation in power electronics, telecommunications, aerospace and defense, and beyond.
Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.
The global GaN Power Devices market size was US$ 406 million in 2024 and is forecast to a readjusted size of US$ 2,245 million by 2031 with a CAGR of 25.6% during the forecast period 2025-2031.
The global SiC Power Devices market size was US$ 4.87 billion in 2024 and is forecast to a readjusted size of US$ 18.8 billion by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
The North America GaN and SiC Power Semiconductor market size was US$ 1,039 million in 2024, while China was US$ 2,584 million. The proportion of the North America was 19.69% in 2024, while China percentage was 48.9%, and it is predicted that China share will reach 61.1% in 2031, trailing a CAGR of 24.53 % through the analysis period.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
The global key manufacturers of SiC Power Devices include onsemi, STMicroelectronics, Infineon, Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, Rohm, San'an Optoelectronics, etc,. In 2024, the global top seven players occupied for a share approximately 85% in terms of revenue.
Automotive is the largest market, holds a share about 81% in 2024, it is prejected that Automotive will reach 83.6% in 2031.
In North America, in terms of sales volume, in 2024, the top five players hold a share about 76%, while in China, top five players hold a share nearly 62.9%.
This report studies the global SiC and GaN Power Semiconductor production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for SiC and GaN Power Semiconductor and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of SiC and GaN Power Semiconductor that contribute to its increasing demand across many markets.
Highlights and key features of the study
Global SiC and GaN Power Semiconductor total production and demand, 2021-2032, (K Units)
Global SiC and GaN Power Semiconductor total production value, 2021-2032, (USD Million)
Global SiC and GaN Power Semiconductor production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (K Units), (based on production site)
Global SiC and GaN Power Semiconductor consumption by region & country, CAGR, 2021-2032 & (K Units)
U.S. VS China: SiC and GaN Power Semiconductor domestic production, consumption, key domestic manufacturers and share
Global SiC and GaN Power Semiconductor production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (K Units)
Global SiC and GaN Power Semiconductor production by Type, production, value, CAGR, 2021-2032, (USD Million) & (K Units)
Global SiC and GaN Power Semiconductor production by Application, production, value, CAGR, 2021-2032, (USD Million) & (K Units)
This report profiles key players in the global SiC and GaN Power Semiconductor market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include onsemi, STMicroelectronics, Infineon (GaN Systems), Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Innoscience, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World SiC and GaN Power Semiconductor market
Detailed Segmentation:
Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Units) and average price (US$/Unit) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.
Global SiC and GaN Power Semiconductor Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World
Global SiC and GaN Power Semiconductor Market, Segmentation by Type:
SiC Power Devices
GaN Power Devices
Global SiC and GaN Power Semiconductor Market, Segmentation by Application:
Automotive & Mobility
EV Charging
Consumer Electronics
Industrial Motor/Drive
PV, Energy Storage, Wind Power
UPS, Data Center & Server
Rail Transport
Defense & Aerospace
Others
Companies Profiled:
onsemi
STMicroelectronics
Infineon (GaN Systems)
Wolfspeed
BYD Semiconductor
Bosch
United Nova Technology
Innoscience
Navitas (GeneSiC)
Guangdong AccoPower Semiconductor
Rohm
San'an Optoelectronics
Efficient Power Conversion Corporation (EPC)
Power Integrations, Inc.
Semikron Danfoss
Mitsubishi Electric
BASiC Semiconductor
Fuji Electric
SemiQ
PN Junction Semiconductor (Hangzhou)
Zhuzhou CRRC Times Electric
InventChip Technology
Microchip (Microsemi)
CETC 55
Toshiba
WeEn Semiconductors
Littelfuse (IXYS)
Renesas Electronics (Transphorm)
Yangzhou Yangjie Electronic Technology
Vishay Intertechnology
China Resources Microelectronics Limited
Nexperia
SK powertech
Texas Instruments
Alpha & Omega Semiconductor
SanRex
StarPower
Changzhou Galaxy Century Microelectronics
GE Aerospace
Hangzhou Silan Microelectronics
KEC
PANJIT Group
Diodes Incorporated
Cissoid
Key Questions Answered:
1. How big is the global SiC and GaN Power Semiconductor market?
2. What is the demand of the global SiC and GaN Power Semiconductor market?
3. What is the year over year growth of the global SiC and GaN Power Semiconductor market?
4. What is the production and production value of the global SiC and GaN Power Semiconductor market?
5. Who are the key producers in the global SiC and GaN Power Semiconductor market?
6. What are the growth factors driving the market demand?
This report studies SiC power devices and GaN devices. The SiC power devices including SiC MOSFET Module, SiC MOSFET Discrete and SiC diode. The GaN devices include GaN RF devices and GaN power devices.
Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices.
GaN has emerged as a revolutionary semiconductor material with several distinct advantages over incumbent technologies in both power electronics and radio frequency (RF) applications. GaN’s versatility, combined with its ability to operate at high frequencies and handle high power densities, positions it as a pivotal technology driving innovation in power electronics, telecommunications, aerospace and defense, and beyond.
Silicon carbide MOSFETs have the characteristics of low on-resistance and small switching losses, which can reduce device losses and improve system efficiency, and are more suitable for high-frequency circuits. It is widely used in the fields of new energy vehicle motor controller, vehicle power supply, solar inverter, charging pile, UPS, PFC power supply and other fields.
The global GaN Power Devices market size was US$ 406 million in 2024 and is forecast to a readjusted size of US$ 2,245 million by 2031 with a CAGR of 25.6% during the forecast period 2025-2031.
The global SiC Power Devices market size was US$ 4.87 billion in 2024 and is forecast to a readjusted size of US$ 18.8 billion by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
The North America GaN and SiC Power Semiconductor market size was US$ 1,039 million in 2024, while China was US$ 2,584 million. The proportion of the North America was 19.69% in 2024, while China percentage was 48.9%, and it is predicted that China share will reach 61.1% in 2031, trailing a CAGR of 24.53 % through the analysis period.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
The global key manufacturers of SiC Power Devices include onsemi, STMicroelectronics, Infineon, Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, Rohm, San'an Optoelectronics, etc,. In 2024, the global top seven players occupied for a share approximately 85% in terms of revenue.
Automotive is the largest market, holds a share about 81% in 2024, it is prejected that Automotive will reach 83.6% in 2031.
In North America, in terms of sales volume, in 2024, the top five players hold a share about 76%, while in China, top five players hold a share nearly 62.9%.
This report studies the global SiC and GaN Power Semiconductor production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for SiC and GaN Power Semiconductor and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of SiC and GaN Power Semiconductor that contribute to its increasing demand across many markets.
Highlights and key features of the study
Global SiC and GaN Power Semiconductor total production and demand, 2021-2032, (K Units)
Global SiC and GaN Power Semiconductor total production value, 2021-2032, (USD Million)
Global SiC and GaN Power Semiconductor production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (K Units), (based on production site)
Global SiC and GaN Power Semiconductor consumption by region & country, CAGR, 2021-2032 & (K Units)
U.S. VS China: SiC and GaN Power Semiconductor domestic production, consumption, key domestic manufacturers and share
Global SiC and GaN Power Semiconductor production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (K Units)
Global SiC and GaN Power Semiconductor production by Type, production, value, CAGR, 2021-2032, (USD Million) & (K Units)
Global SiC and GaN Power Semiconductor production by Application, production, value, CAGR, 2021-2032, (USD Million) & (K Units)
This report profiles key players in the global SiC and GaN Power Semiconductor market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include onsemi, STMicroelectronics, Infineon (GaN Systems), Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Innoscience, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World SiC and GaN Power Semiconductor market
Detailed Segmentation:
Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Units) and average price (US$/Unit) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.
Global SiC and GaN Power Semiconductor Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World
Global SiC and GaN Power Semiconductor Market, Segmentation by Type:
SiC Power Devices
GaN Power Devices
Global SiC and GaN Power Semiconductor Market, Segmentation by Application:
Automotive & Mobility
EV Charging
Consumer Electronics
Industrial Motor/Drive
PV, Energy Storage, Wind Power
UPS, Data Center & Server
Rail Transport
Defense & Aerospace
Others
Companies Profiled:
onsemi
STMicroelectronics
Infineon (GaN Systems)
Wolfspeed
BYD Semiconductor
Bosch
United Nova Technology
Innoscience
Navitas (GeneSiC)
Guangdong AccoPower Semiconductor
Rohm
San'an Optoelectronics
Efficient Power Conversion Corporation (EPC)
Power Integrations, Inc.
Semikron Danfoss
Mitsubishi Electric
BASiC Semiconductor
Fuji Electric
SemiQ
PN Junction Semiconductor (Hangzhou)
Zhuzhou CRRC Times Electric
InventChip Technology
Microchip (Microsemi)
CETC 55
Toshiba
WeEn Semiconductors
Littelfuse (IXYS)
Renesas Electronics (Transphorm)
Yangzhou Yangjie Electronic Technology
Vishay Intertechnology
China Resources Microelectronics Limited
Nexperia
SK powertech
Texas Instruments
Alpha & Omega Semiconductor
SanRex
StarPower
Changzhou Galaxy Century Microelectronics
GE Aerospace
Hangzhou Silan Microelectronics
KEC
PANJIT Group
Diodes Incorporated
Cissoid
Key Questions Answered:
1. How big is the global SiC and GaN Power Semiconductor market?
2. What is the demand of the global SiC and GaN Power Semiconductor market?
3. What is the year over year growth of the global SiC and GaN Power Semiconductor market?
4. What is the production and production value of the global SiC and GaN Power Semiconductor market?
5. Who are the key producers in the global SiC and GaN Power Semiconductor market?
6. What are the growth factors driving the market demand?
Table of Contents
203 Pages
- 1 Supply Summary
- 2 Demand Summary
- 3 World Manufacturers Competitive Analysis
- 4 United States VS China VS Rest of the World
- 5 Market Analysis by Type
- 6 Market Analysis by Application
- 7 Company Profiles
- 8 Industry Chain Analysis
- 9 Research Findings and Conclusion
- 10 Appendix
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