Global SiC and GaN Power Devices Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031
Description
According to our (Global Info Research) latest study, the global SiC and GaN Power Devices market size was valued at US$ 5426 million in 2024 and is forecast to a readjusted size of USD 21140 million by 2031 with a CAGR of 20.5% during review period.
This report studies the GaN Power Devices and SiC Power Devices. In terms of market size, currently, GaN power devices are about one-tenth of SiC power devices. Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices. SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.
The global GaN Power Devices market size was US$ 406 million in 2024 and is forecast to a readjusted size of US$ 2,245 million by 2031 with a CAGR of 25.6% during the forecast period 2025-2031.
The global SiC Power Devices market size was US$ 4.87 billion in 2024 and is forecast to a readjusted size of US$ 18.8 billion by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
The North America GaN and SiC Power Semiconductor market size was US$ 1,039 million in 2024, while China was US$ 2,584 million. The proportion of the North America was 19.69% in 2024, while China percentage was 48.9%, and it is predicted that China share will reach 61.1% in 2031, trailing a CAGR of 24.53 % through the analysis period.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
The global key manufacturers of SiC Power Devices include onsemi, STMicroelectronics, Infineon, Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, Rohm, San'an Optoelectronics, etc,. In 2024, the global top seven players occupied for a share approximately 85% in terms of revenue.
Automotive is the largest market, holds a share about 81% in 2024, it is prejected that Automotive will reach 83.6% in 2031.
In North America, in terms of sales volume, in 2024, the top five players hold a share about 76%, while in China, top five players hold a share nearly 62.9%.
The global GaN and SiC Power Semiconductor market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global GaN and SiC Power Semiconductor market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by region (country), by Type and by Application for the period 2020-2031.
This report is a detailed and comprehensive analysis for global SiC and GaN Power Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
Key Features:
Global SiC and GaN Power Devices market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global SiC and GaN Power Devices market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global SiC and GaN Power Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global SiC and GaN Power Devices market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for SiC and GaN Power Devices
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global SiC and GaN Power Devices market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include onsemi, STMicroelectronics, Infineon (GaN Systems), Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Innoscience, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
SiC and GaN Power Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
SiC Power Devices
GaN Power Devices
Market segment by Application
Automotive & Mobility
EV Charging
Consumer Electronics
Industrial Motor/Drive
PV, Energy Storage, Wind Power
UPS, Data Center & Server
Rail Transport
Defense & Aerospace
Others
Major players covered
onsemi
STMicroelectronics
Infineon (GaN Systems)
Wolfspeed
BYD Semiconductor
Bosch
United Nova Technology
Innoscience
Navitas (GeneSiC)
Guangdong AccoPower Semiconductor
Rohm
San'an Optoelectronics
Efficient Power Conversion Corporation (EPC)
Power Integrations, Inc.
Semikron Danfoss
Mitsubishi Electric
BASiC Semiconductor
Fuji Electric
SemiQ
PN Junction Semiconductor (Hangzhou)
Zhuzhou CRRC Times Electric
InventChip Technology
Microchip (Microsemi)
CETC 55
Toshiba
WeEn Semiconductors
Littelfuse (IXYS)
Renesas Electronics (Transphorm)
Yangzhou Yangjie Electronic Technology
Vishay Intertechnology
China Resources Microelectronics Limited
Nexperia
SK powertech
Texas Instruments
Alpha & Omega Semiconductor
SanRex
StarPower
Changzhou Galaxy Century Microelectronics
GE Aerospace
Hangzhou Silan Microelectronics
KEC
PANJIT Group
Diodes Incorporated
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC and GaN Power Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC and GaN Power Devices, with price, sales quantity, revenue, and global market share of SiC and GaN Power Devices from 2020 to 2025.
Chapter 3, the SiC and GaN Power Devices competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC and GaN Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and SiC and GaN Power Devices market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC and GaN Power Devices.
Chapter 14 and 15, to describe SiC and GaN Power Devices sales channel, distributors, customers, research findings and conclusion.
This report studies the GaN Power Devices and SiC Power Devices. In terms of market size, currently, GaN power devices are about one-tenth of SiC power devices. Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices. SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.
The global GaN Power Devices market size was US$ 406 million in 2024 and is forecast to a readjusted size of US$ 2,245 million by 2031 with a CAGR of 25.6% during the forecast period 2025-2031.
The global SiC Power Devices market size was US$ 4.87 billion in 2024 and is forecast to a readjusted size of US$ 18.8 billion by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
The North America GaN and SiC Power Semiconductor market size was US$ 1,039 million in 2024, while China was US$ 2,584 million. The proportion of the North America was 19.69% in 2024, while China percentage was 48.9%, and it is predicted that China share will reach 61.1% in 2031, trailing a CAGR of 24.53 % through the analysis period.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
The global key manufacturers of SiC Power Devices include onsemi, STMicroelectronics, Infineon, Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, Rohm, San'an Optoelectronics, etc,. In 2024, the global top seven players occupied for a share approximately 85% in terms of revenue.
Automotive is the largest market, holds a share about 81% in 2024, it is prejected that Automotive will reach 83.6% in 2031.
In North America, in terms of sales volume, in 2024, the top five players hold a share about 76%, while in China, top five players hold a share nearly 62.9%.
The global GaN and SiC Power Semiconductor market is segmented by company, region (country), by Type, and by Application. Players, stakeholders, and other participants in the global GaN and SiC Power Semiconductor market will be able to gain the upper hand as they use the report as a powerful resource. The segmental analysis focuses on sales, revenue and forecast by region (country), by Type and by Application for the period 2020-2031.
This report is a detailed and comprehensive analysis for global SiC and GaN Power Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
Key Features:
Global SiC and GaN Power Devices market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global SiC and GaN Power Devices market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global SiC and GaN Power Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global SiC and GaN Power Devices market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for SiC and GaN Power Devices
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global SiC and GaN Power Devices market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include onsemi, STMicroelectronics, Infineon (GaN Systems), Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Innoscience, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
SiC and GaN Power Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
SiC Power Devices
GaN Power Devices
Market segment by Application
Automotive & Mobility
EV Charging
Consumer Electronics
Industrial Motor/Drive
PV, Energy Storage, Wind Power
UPS, Data Center & Server
Rail Transport
Defense & Aerospace
Others
Major players covered
onsemi
STMicroelectronics
Infineon (GaN Systems)
Wolfspeed
BYD Semiconductor
Bosch
United Nova Technology
Innoscience
Navitas (GeneSiC)
Guangdong AccoPower Semiconductor
Rohm
San'an Optoelectronics
Efficient Power Conversion Corporation (EPC)
Power Integrations, Inc.
Semikron Danfoss
Mitsubishi Electric
BASiC Semiconductor
Fuji Electric
SemiQ
PN Junction Semiconductor (Hangzhou)
Zhuzhou CRRC Times Electric
InventChip Technology
Microchip (Microsemi)
CETC 55
Toshiba
WeEn Semiconductors
Littelfuse (IXYS)
Renesas Electronics (Transphorm)
Yangzhou Yangjie Electronic Technology
Vishay Intertechnology
China Resources Microelectronics Limited
Nexperia
SK powertech
Texas Instruments
Alpha & Omega Semiconductor
SanRex
StarPower
Changzhou Galaxy Century Microelectronics
GE Aerospace
Hangzhou Silan Microelectronics
KEC
PANJIT Group
Diodes Incorporated
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC and GaN Power Devices product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of SiC and GaN Power Devices, with price, sales quantity, revenue, and global market share of SiC and GaN Power Devices from 2020 to 2025.
Chapter 3, the SiC and GaN Power Devices competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC and GaN Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and SiC and GaN Power Devices market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of SiC and GaN Power Devices.
Chapter 14 and 15, to describe SiC and GaN Power Devices sales channel, distributors, customers, research findings and conclusion.
Table of Contents
199 Pages
- 1 Market Overview
- 2 Manufacturers Profiles
- 3 Competitive Environment: SiC and GaN Power Devices by Manufacturer
- 4 Consumption Analysis by Region
- 5 Market Segment by Type
- 6 Market Segment by Application
- 7 North America
- 8 Europe
- 9 Asia-Pacific
- 10 South America
- 11 Middle East & Africa
- 12 Market Dynamics
- 13 Raw Material and Industry Chain
- 14 Shipments by Distribution Channel
- 15 Research Findings and Conclusion
- 16 Appendix
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