Global SiC Based Power Electronics Supply, Demand and Key Producers, 2026-2032

The global SiC Based Power Electronics market size is expected to reach $ 21860 million by 2032, rising at a market growth of 20.1% CAGR during the forecast period (2026-2032).

Silicon carbide (SiC) power devices are wide-bandgap semiconductor components—chiefly SiC Schottky barrier diodes (SBDs), SiC MOSFETs (discrete and trench/planar variations), SiC JFETs, and integrated SiC power modules—that deliver much higher breakdown voltages, faster switching, lower conduction and switching losses, and superior thermal performance than silicon counterparts. Product types range from low-voltage (≤ 200–650 V) and automotive-grade 600–1200 V discrete MOSFETs and SBDs used in onboard chargers (OBCs) and DC–DC converters, to high-voltage (1200 V–3300 V and above) power MOSFETs and packaged modules deployed in EV traction inverters, PV/utility inverters, industrial motor drives and traction/rail applications. Key applications today are dominated by electric vehicles (traction inverters and on-board charging), fast chargers, renewable-energy inverters, data-center and telecom power supplies, and industrial drives—areas that benefit most from SiC’s efficiency and thermal advantages and where system-level cost and efficiency tradeoffs favor SiC adoption.

The SiC ecosystem (value chain) spans upstream raw-material and substrate suppliers (bulk SiC crystal growers and wafer makers), epitaxial (epi) wafer manufacturers, device fabs (front-end processing), power-module and packaging specialists, test & qualification services, and downstream system integrators/OEMs (automotive Tier-1s, inverter makers, datacenter PSU vendors). Upstream concentration and capacity (substrates/epi) are strategic bottlenecks that determine cost and yield; midstream device makers add process IP (implantation, gate technology, trench or planar MOS structures) and qualification for automotive AEC-Q/TS standards; downstream players drive integration into modules and cooling/thermal management solutions. Leading device suppliers include STMicroelectronics, Infineon, Wolfspeed (Cree), ROHM, onsemi, Toshiba/Mitsubishi and several Chinese and Japanese challengers—competition has intensified as these players scale 150–200 mm wafer flows and pursue module partnerships. Industry developments to watch: widescale migration to 200 mm SiC manufacturing to lower unit cost (major vendors announced 200 mm roadmaps), consolidation and verticalization (some substrate and epi play acquisitions/alliances), push for higher reliability and automotive qualification, and system-level optimization (SiC + Si hybrid topologies, smarter packaging and cooling). Market forecasts show multi-year double-digit CAGR as SiC penetration grows in EV traction and renewables, even as supply and short-term demand cycles create volatility for specific producers.

This report studies the global SiC Based Power Electronics production, demand, key manufacturers, and key regions.

This report is a detailed and comprehensive analysis of the world market for SiC Based Power Electronics and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of SiC Based Power Electronics that contribute to its increasing demand across many markets.

Highlights and key features of the study

Global SiC Based Power Electronics total production and demand, 2021-2032, (K Pieces)

Global SiC Based Power Electronics total production value, 2021-2032, (USD Million)

Global SiC Based Power Electronics production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (K Pieces), (based on production site)

Global SiC Based Power Electronics consumption by region & country, CAGR, 2021-2032 & (K Pieces)

U.S. VS China: SiC Based Power Electronics domestic production, consumption, key domestic manufacturers and share

Global SiC Based Power Electronics production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (K Pieces)

Global SiC Based Power Electronics production by Type, production, value, CAGR, 2021-2032, (USD Million) & (K Pieces)

Global SiC Based Power Electronics production by Application, production, value, CAGR, 2021-2032, (USD Million) & (K Pieces)

This report profiles key players in the global SiC Based Power Electronics market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech), Semikron Danfoss, Fuji Electric, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World SiC Based Power Electronics market

Detailed Segmentation:

Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Pieces) and average price (US$/Pcs) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.

Global SiC Based Power Electronics Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World

Global SiC Based Power Electronics Market, Segmentation by Type:
SiC MOSFET Module
SiC MOSFET Discrete
SiC SBD
Others (SiC JFETs & FETs)

Global SiC Based Power Electronics Market, Segmentation by Application:
Automotive & EV/HEV
EV Charging
Industrial Motor/Drive
PV, Energy Storage, Wind Power
UPS, Data Center & Server
Rail Transport
Others

Companies Profiled:
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric (Vincotech)
Semikron Danfoss
Fuji Electric
Navitas (GeneSiC)
Toshiba
San'an Optoelectronics
Littelfuse
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
SanRex
Alpha & Omega Semiconductor
Bosch
GE Aerospace
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
StarPower
Yangzhou Yangjie Electronic Technology
Guangdong AccoPower Semiconductor
Changzhou Galaxy Century Microelectronics
Hangzhou Silan Microelectronics
Cissoid
Hebei Sinopack Electronic Technology
PN Junction Semiconductor (Hangzhou)
United Nova Technology
InventChip Technology
Leadrive Technology
HAIMOSIC (SHANGHAI)
Suzhou Sko Semiconductor
Shenzhen Aishite Technology
Suzhou Xizhi Technology
Archimedes Semiconductor (Hefei)
Grecon Semiconductor (Shanghai)

Key Questions Answered:

1. How big is the global SiC Based Power Electronics market?

2. What is the demand of the global SiC Based Power Electronics market?

3. What is the year over year growth of the global SiC Based Power Electronics market?

4. What is the production and production value of the global SiC Based Power Electronics market?

5. Who are the key producers in the global SiC Based Power Electronics market?

6. What are the growth factors driving the market demand? Show more