Global Semiconductor Silicon Carbide (SiC) Power Devices Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031

According to our (Global Info Research) latest study, the global Semiconductor Silicon Carbide (SiC) Power Devices market size was valued at US$ 3978 million in 2024 and is forecast to a readjusted size of USD 12890 million by 2031 with a CAGR of 18.5% during review period.

SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.

Silicon Carbide (SiC) devices have emerged as the most viable candidate for next-generation, low-loss semiconductors due to its low ON resistance and superior high-temperature, high-frequency, and high-voltage performance when compared to silicon. SiC also allows designers to use fewer components, further reducing design complexity. The low ON resistance of SiC devices contribute to significantly lower energy consumption, allowing users to design environmentally friendly products and systems that reduce CO2 emissions.

Automotive is the largest market, hold a share over 65%, mainly used in OBC, DC/DC Converter, etc.

Global new energy vehicles continue to grow rapidly. In 2023, the total sales of new energy vehicles in the world reached 14.65 million, a simultaneous increase of 35.4%. Among them, China's new energy vehicle sales reached 9.495 million, accounting for 64.8% of global sales. The production and sales of new energy vehicles have ranked first in the world for eight consecutive years. In 2023, the sales of new energy vehicles in the United States and Europe were 2.94 million and 1.46 million respectively, with year-on-year growth rates of 18.3% and 48.0% respectively.

This report is a detailed and comprehensive analysis for global Semiconductor Silicon Carbide (SiC) Power Devices market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.

Key Features:

Global Semiconductor Silicon Carbide (SiC) Power Devices market size and forecasts, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031

Global Semiconductor Silicon Carbide (SiC) Power Devices market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031

Global Semiconductor Silicon Carbide (SiC) Power Devices market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031

Global Semiconductor Silicon Carbide (SiC) Power Devices market shares of main players, shipments in revenue ($ Million), sales quantity (K Pcs), and ASP (US$/Pcs), 2020-2025

The Primary Objectives in This Report Are:

To determine the size of the total market opportunity of global and key countries

To assess the growth potential for Semiconductor Silicon Carbide (SiC) Power Devices

To forecast future growth in each product and end-use market

To assess competitive factors affecting the marketplace

This report profiles key players in the global Semiconductor Silicon Carbide (SiC) Power Devices market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech), Semikron Danfoss, Fuji Electric, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Market Segmentation

Semiconductor Silicon Carbide (SiC) Power Devices market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.

Market segment by Type
SiC MOSFET Modules
SiC MOSFET Discretes
SiC Diode/SBD
Others (SiC JFETs & FETs)

Market segment by Application
Automotive & EV/HEV
EV Charging
Industrial Motor/Drive
PV, Energy Storage, Wind Power
UPS, Data Center & Server
Rail Transport
Others

Major players covered
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
BYD Semiconductor
Microchip (Microsemi)
Mitsubishi Electric (Vincotech)
Semikron Danfoss
Fuji Electric
Navitas (GeneSiC)
Toshiba
Qorvo (UnitedSiC)
San'an Optoelectronics
Littelfuse (IXYS)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
SanRex
Alpha & Omega Semiconductor
Bosch
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
StarPower
Yangzhou Yangjie Electronic Technology
Guangdong AccoPower Semiconductor
Changzhou Galaxy Century Microelectronics
Hangzhou Silan Microelectronics
Cissoid
SK powertech
InventChip Technology
Hebei Sinopack Electronic Technology
Oriental Semiconductor
Jilin Sino-Microelectronics
PN Junction Semiconductor (Hangzhou)
United Nova Technology

Market segment by region, regional analysis covers

North America (United States, Canada, and Mexico)

Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)

Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)

South America (Brazil, Argentina, Colombia, and Rest of South America)

Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)

The content of the study subjects, includes a total of 15 chapters:

Chapter 1, to describe Semiconductor Silicon Carbide (SiC) Power Devices product scope, market overview, market estimation caveats and base year.

Chapter 2, to profile the top manufacturers of Semiconductor Silicon Carbide (SiC) Power Devices, with price, sales quantity, revenue, and global market share of Semiconductor Silicon Carbide (SiC) Power Devices from 2020 to 2025.

Chapter 3, the Semiconductor Silicon Carbide (SiC) Power Devices competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.

Chapter 4, the Semiconductor Silicon Carbide (SiC) Power Devices breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.

Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.

Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Semiconductor Silicon Carbide (SiC) Power Devices market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.

Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.

Chapter 13, the key raw materials and key suppliers, and industry chain of Semiconductor Silicon Carbide (SiC) Power Devices.

Chapter 14 and 15, to describe Semiconductor Silicon Carbide (SiC) Power Devices sales channel, distributors, customers, research findings and conclusion.