Global SGT MOSFET Supply, Demand and Key Producers, 2026-2032
Description
The global SGT MOSFET market size is expected to reach $ 3876 million by 2032, rising at a market growth of 7.8% CAGR during the forecast period (2026-2032).
Shielded Gate Trench MOSFET (SGT-MOSFET) is an improved trench power MOSFET based on the traditional trench MOSFET (U-MOSFET). Based on the charge balance technology theory, it adds an additional polysilicon field plate to the traditional power MOSFET for electric field modulation to improve the device structure of withstand voltage and reduce on-resistance. It has the characteristics of low on-resistance, low switching loss, and good frequency characteristics. Its shielded gate plays the role of an internal field plate in the drift region, which makes SGT have significant advantages in terms of specific on-resistance R_(ON(SP)) and quality factor (FOM=Ron*Qg), which can effectively improve the energy efficiency of the system.
Global key players of SGT MOSFET include Infineon, ON Semiconductor, China Resources Microelectronics Limited, etc. The top three players hold a share over 60%. China is the largest market, with a share about 44%, followed by Europe and North America, with share 20% and 17%, separately. In terms of product type, ≤100V is the largest segment, occupied for a share of 54%. In terms of application, Consumer Electronics is the largest one, with a share about 45 percent.
Analysis of SGT MOSFET market drivers
Technology upgrade and performance advantages
SGT MOSFET (shielded gate trench power MOSFET) significantly reduces on-resistance (Rsp) and switching loss (Qg) by optimizing trench depth and shielded gate structure, while improving energy density and chip integration. Compared with traditional trench MOSFET, its chip area can be reduced by 40%, on-resistance can be reduced by more than 50%, and high-frequency characteristics are better. These technical advantages make it irreplaceable in high-frequency, high-efficiency, and high-power density scenarios (such as automotive electronics and consumer electronics).
Demand explosion in emerging application fields
Automotive electronics: Electric vehicles have a surge in demand for high-voltage/high-current power devices, and SGT MOSFET is widely used in scenarios such as on-board charging, motor drive, and battery management system (BMS).
Consumer electronics: The demand for low-power and miniaturized devices in terminals such as fast charging adapters and TWS headphones has driven the penetration rate of SGT MOSFET in the low-voltage field (≤100V).
Industry and energy storage: The growing demand for efficient power conversion in fields such as photovoltaic inverters and industrial motor control has further driven the demand for SGT MOSFET.
Domestic substitution and cost optimization
Domestic manufacturers (such as Huarun Microelectronics, Silan Microelectronics, and Xinjie Energy) gradually replace imported products through technological breakthroughs and capacity expansion.
Domestic SGT MOSFET has achieved a localization rate of more than 80% in the low-end market such as electric bicycle controllers with its high cost performance (such as Xinjie Energy's third-generation product on-resistance is reduced by more than 20%) and rapid response capabilities.
Policy support and industrial chain coordination
Governments of various countries promote the autonomy of the semiconductor industry (such as China's "14th Five-Year Plan" and the EU Chip Act), and provide funds and tax incentives for SGT MOSFET.
Domestic manufacturers achieve vertical integration from design to manufacturing through the IDM model (such as Huarun Microelectronics) or cooperation with wafer fabs (such as Jiejie Microelectronics and SMIC), shorten the R&D cycle and reduce costs.
Supply chain reconstruction and chip shortage catalysis
Overseas giants (such as Infineon and ON Semiconductor) transfer part of their orders to domestic foundries, indirectly promoting the upgrading of local SGT MOSFET processes (such as Xinjie Energy's third-generation products achieve double-sided heat dissipation packaging).
The growth of the SGT MOSFET market is driven by technology upgrades, emerging application demands, accelerated domestic substitution, policy support, and supply chain reconstruction. In the future, as automotive electronics and industrial automation continue to advance, SGT MOSFET will form differentiated competition with GaN in the medium and low voltage fields.
This report studies the global SGT MOSFET production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for SGT MOSFET and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of SGT MOSFET that contribute to its increasing demand across many markets.
Highlights and key features of the study
Global SGT MOSFET total production and demand, 2021-2032, (Million Units)
Global SGT MOSFET total production value, 2021-2032, (USD Million)
Global SGT MOSFET production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (Million Units), (based on production site)
Global SGT MOSFET consumption by region & country, CAGR, 2021-2032 & (Million Units)
U.S. VS China: SGT MOSFET domestic production, consumption, key domestic manufacturers and share
Global SGT MOSFET production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (Million Units)
Global SGT MOSFET production by Type, production, value, CAGR, 2021-2032, (USD Million) & (Million Units)
Global SGT MOSFET production by Application, production, value, CAGR, 2021-2032, (USD Million) & (Million Units)
This report profiles key players in the global SGT MOSFET market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, ON Semiconductor, China Resources Microelectronics Limited, AOS, Wuxi NCE Power Co.,Ltd., JieJie Microelectronics, Silan Microelectronics, Yangjie Electronic Technology, Hunteck, Oriental Semiconductor, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World SGT MOSFET market
Detailed Segmentation:
Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (Million Units) and average price (US$/K Units) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.
Global SGT MOSFET Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World
Global SGT MOSFET Market, Segmentation by Type:
≤100V
＞100V
Global SGT MOSFET Market, Segmentation by Application:
Automotive Electronics
Consumer Electronics
Industrial Electronics
Companies Profiled:
Infineon
ON Semiconductor
China Resources Microelectronics Limited
AOS
Wuxi NCE Power Co.,Ltd.
JieJie Microelectronics
Silan Microelectronics
Yangjie Electronic Technology
Hunteck
Oriental Semiconductor
Key Questions Answered:
1. How big is the global SGT MOSFET market?
2. What is the demand of the global SGT MOSFET market?
3. What is the year over year growth of the global SGT MOSFET market?
4. What is the production and production value of the global SGT MOSFET market?
5. Who are the key producers in the global SGT MOSFET market?
6. What are the growth factors driving the market demand?
Shielded Gate Trench MOSFET (SGT-MOSFET) is an improved trench power MOSFET based on the traditional trench MOSFET (U-MOSFET). Based on the charge balance technology theory, it adds an additional polysilicon field plate to the traditional power MOSFET for electric field modulation to improve the device structure of withstand voltage and reduce on-resistance. It has the characteristics of low on-resistance, low switching loss, and good frequency characteristics. Its shielded gate plays the role of an internal field plate in the drift region, which makes SGT have significant advantages in terms of specific on-resistance R_(ON(SP)) and quality factor (FOM=Ron*Qg), which can effectively improve the energy efficiency of the system.
Global key players of SGT MOSFET include Infineon, ON Semiconductor, China Resources Microelectronics Limited, etc. The top three players hold a share over 60%. China is the largest market, with a share about 44%, followed by Europe and North America, with share 20% and 17%, separately. In terms of product type, ≤100V is the largest segment, occupied for a share of 54%. In terms of application, Consumer Electronics is the largest one, with a share about 45 percent.
Analysis of SGT MOSFET market drivers
Technology upgrade and performance advantages
SGT MOSFET (shielded gate trench power MOSFET) significantly reduces on-resistance (Rsp) and switching loss (Qg) by optimizing trench depth and shielded gate structure, while improving energy density and chip integration. Compared with traditional trench MOSFET, its chip area can be reduced by 40%, on-resistance can be reduced by more than 50%, and high-frequency characteristics are better. These technical advantages make it irreplaceable in high-frequency, high-efficiency, and high-power density scenarios (such as automotive electronics and consumer electronics).
Demand explosion in emerging application fields
Automotive electronics: Electric vehicles have a surge in demand for high-voltage/high-current power devices, and SGT MOSFET is widely used in scenarios such as on-board charging, motor drive, and battery management system (BMS).
Consumer electronics: The demand for low-power and miniaturized devices in terminals such as fast charging adapters and TWS headphones has driven the penetration rate of SGT MOSFET in the low-voltage field (≤100V).
Industry and energy storage: The growing demand for efficient power conversion in fields such as photovoltaic inverters and industrial motor control has further driven the demand for SGT MOSFET.
Domestic substitution and cost optimization
Domestic manufacturers (such as Huarun Microelectronics, Silan Microelectronics, and Xinjie Energy) gradually replace imported products through technological breakthroughs and capacity expansion.
Domestic SGT MOSFET has achieved a localization rate of more than 80% in the low-end market such as electric bicycle controllers with its high cost performance (such as Xinjie Energy's third-generation product on-resistance is reduced by more than 20%) and rapid response capabilities.
Policy support and industrial chain coordination
Governments of various countries promote the autonomy of the semiconductor industry (such as China's "14th Five-Year Plan" and the EU Chip Act), and provide funds and tax incentives for SGT MOSFET.
Domestic manufacturers achieve vertical integration from design to manufacturing through the IDM model (such as Huarun Microelectronics) or cooperation with wafer fabs (such as Jiejie Microelectronics and SMIC), shorten the R&D cycle and reduce costs.
Supply chain reconstruction and chip shortage catalysis
Overseas giants (such as Infineon and ON Semiconductor) transfer part of their orders to domestic foundries, indirectly promoting the upgrading of local SGT MOSFET processes (such as Xinjie Energy's third-generation products achieve double-sided heat dissipation packaging).
The growth of the SGT MOSFET market is driven by technology upgrades, emerging application demands, accelerated domestic substitution, policy support, and supply chain reconstruction. In the future, as automotive electronics and industrial automation continue to advance, SGT MOSFET will form differentiated competition with GaN in the medium and low voltage fields.
This report studies the global SGT MOSFET production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for SGT MOSFET and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of SGT MOSFET that contribute to its increasing demand across many markets.
Highlights and key features of the study
Global SGT MOSFET total production and demand, 2021-2032, (Million Units)
Global SGT MOSFET total production value, 2021-2032, (USD Million)
Global SGT MOSFET production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (Million Units), (based on production site)
Global SGT MOSFET consumption by region & country, CAGR, 2021-2032 & (Million Units)
U.S. VS China: SGT MOSFET domestic production, consumption, key domestic manufacturers and share
Global SGT MOSFET production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (Million Units)
Global SGT MOSFET production by Type, production, value, CAGR, 2021-2032, (USD Million) & (Million Units)
Global SGT MOSFET production by Application, production, value, CAGR, 2021-2032, (USD Million) & (Million Units)
This report profiles key players in the global SGT MOSFET market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, ON Semiconductor, China Resources Microelectronics Limited, AOS, Wuxi NCE Power Co.,Ltd., JieJie Microelectronics, Silan Microelectronics, Yangjie Electronic Technology, Hunteck, Oriental Semiconductor, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World SGT MOSFET market
Detailed Segmentation:
Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (Million Units) and average price (US$/K Units) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.
Global SGT MOSFET Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World
Global SGT MOSFET Market, Segmentation by Type:
≤100V
＞100V
Global SGT MOSFET Market, Segmentation by Application:
Automotive Electronics
Consumer Electronics
Industrial Electronics
Companies Profiled:
Infineon
ON Semiconductor
China Resources Microelectronics Limited
AOS
Wuxi NCE Power Co.,Ltd.
JieJie Microelectronics
Silan Microelectronics
Yangjie Electronic Technology
Hunteck
Oriental Semiconductor
Key Questions Answered:
1. How big is the global SGT MOSFET market?
2. What is the demand of the global SGT MOSFET market?
3. What is the year over year growth of the global SGT MOSFET market?
4. What is the production and production value of the global SGT MOSFET market?
5. Who are the key producers in the global SGT MOSFET market?
6. What are the growth factors driving the market demand?
Table of Contents
99 Pages
- 1 Supply Summary
- 2 Demand Summary
- 3 World Manufacturers Competitive Analysis
- 4 United States VS China VS Rest of the World
- 5 Market Analysis by Type
- 6 Market Analysis by Application
- 7 Company Profiles
- 8 Industry Chain Analysis
- 9 Research Findings and Conclusion
- 10 Appendix
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