Global Power Schottky Diode Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031
Description
According to our (Global Info Research) latest study, the global Power Schottky Diode market size was valued at US$ 1505 million in 2024 and is forecast to a readjusted size of USD 3282 million by 2031 with a CAGR of 12.5% during review period.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
Power Schottky diodes combine the low forward‐voltage drop and fast switching of Schottky barrier diodes with enhanced current and voltage handling suited for power applications. They employ a metal–semiconductor junction (typically metal silicide on n-type silicon) to minimize stored charge and conduction losses, yielding forward drops of 0.15–0.45 V and switching speeds up to tens of nanoseconds. Compared to p–n rectifiers, power Schottkys offer higher efficiency and simplified thermal design, though they exhibit greater reverse leakage and modest reverse‐voltage limits (typically ≤ 200 V). Silicon carbide (SiC) variants extend these limits to kilovolt ratings with negligible recovery losses. Key applications include switched-mode power supplies, photovoltaic blocking diodes, OR-ing circuits, and high-speed clamping.
Si SBD is the largest segment, this segment holds 95% in terms of volume, while SiC SBD will grow at a CAGR of 18.5% during next six years.
The global key manufacturers of Power Schottky Diode include Vishay Intertechnology, Fuji Electric, China Resources Microelectronics, Rohm, Nexperia, Toshiba, ST Microelectronics, Diodes Incorporated, ON Semiconductor, Jilin Sino-Microelectronics, Shandong Jingdao Microelectronics, Kyocera AVX, Microchip (Microsemi), PANJIT Group, and Infineon, etc. in 2024, the global top ten players hold a share nearly 65%.
In terms of end use, currently Automotive is the largest segment, with a share about 36 percent in 2024, and this percent will reach 40% in 2031, driven by the rapid growth of EV. Energy is also important market, driven by the market demand of solar energy and wind energy. In consumer good segment, the domestic robots, lighting, game consoles, Home Entertainment, and smart wearables are major applications, will increase rapidly.
This report is a detailed and comprehensive analysis for global Power Schottky Diode market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Power Schottky Diode market size and forecasts, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Schottky Diode market size and forecasts by region and country, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Schottky Diode market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Schottky Diode market shares of main players, shipments in revenue ($ Million), sales quantity (Million Pcs), and ASP (US$/Pcs), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Power Schottky Diode
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Power Schottky Diode market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), Fuji Electric, Navitas (GeneSiC), Toshiba, San'an Optoelectronics, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Power Schottky Diode market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
SiC Schottky Diode
Si Schottky Diode
Market segment by Application
Automotive & Transportation
Energy & Power Grid
Consumer Electronics
Industrial Applications
Telecommunications
Avionics, Military and Medical
Others
Major players covered
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
Microchip (Microsemi)
Fuji Electric
Navitas (GeneSiC)
Toshiba
San'an Optoelectronics
Littelfuse (IXYS)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
Yangzhou Yangjie Electronic Technology
Changzhou Galaxy Century Microelectronics
Kyocera AVX
Sanken Electric
Texas Instruments
Shindengen
Hangzhou Silan Microelectronics
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Power Schottky Diode product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Power Schottky Diode, with price, sales quantity, revenue, and global market share of Power Schottky Diode from 2020 to 2025.
Chapter 3, the Power Schottky Diode competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Power Schottky Diode breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Power Schottky Diode market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Power Schottky Diode.
Chapter 14 and 15, to describe Power Schottky Diode sales channel, distributors, customers, research findings and conclusion.
In this report, we will assess the current U.S. tariff framework alongside international policy adaptations, analyzing their effects on competitive market structures, regional economic dynamics, and supply chain resilience.
Power Schottky diodes combine the low forward‐voltage drop and fast switching of Schottky barrier diodes with enhanced current and voltage handling suited for power applications. They employ a metal–semiconductor junction (typically metal silicide on n-type silicon) to minimize stored charge and conduction losses, yielding forward drops of 0.15–0.45 V and switching speeds up to tens of nanoseconds. Compared to p–n rectifiers, power Schottkys offer higher efficiency and simplified thermal design, though they exhibit greater reverse leakage and modest reverse‐voltage limits (typically ≤ 200 V). Silicon carbide (SiC) variants extend these limits to kilovolt ratings with negligible recovery losses. Key applications include switched-mode power supplies, photovoltaic blocking diodes, OR-ing circuits, and high-speed clamping.
Si SBD is the largest segment, this segment holds 95% in terms of volume, while SiC SBD will grow at a CAGR of 18.5% during next six years.
The global key manufacturers of Power Schottky Diode include Vishay Intertechnology, Fuji Electric, China Resources Microelectronics, Rohm, Nexperia, Toshiba, ST Microelectronics, Diodes Incorporated, ON Semiconductor, Jilin Sino-Microelectronics, Shandong Jingdao Microelectronics, Kyocera AVX, Microchip (Microsemi), PANJIT Group, and Infineon, etc. in 2024, the global top ten players hold a share nearly 65%.
In terms of end use, currently Automotive is the largest segment, with a share about 36 percent in 2024, and this percent will reach 40% in 2031, driven by the rapid growth of EV. Energy is also important market, driven by the market demand of solar energy and wind energy. In consumer good segment, the domestic robots, lighting, game consoles, Home Entertainment, and smart wearables are major applications, will increase rapidly.
This report is a detailed and comprehensive analysis for global Power Schottky Diode market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Power Schottky Diode market size and forecasts, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Schottky Diode market size and forecasts by region and country, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Schottky Diode market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (Million Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Power Schottky Diode market shares of main players, shipments in revenue ($ Million), sales quantity (Million Pcs), and ASP (US$/Pcs), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Power Schottky Diode
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Power Schottky Diode market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include STMicroelectronics, Infineon, Wolfspeed, Rohm, onsemi, Microchip (Microsemi), Fuji Electric, Navitas (GeneSiC), Toshiba, San'an Optoelectronics, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Power Schottky Diode market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
SiC Schottky Diode
Si Schottky Diode
Market segment by Application
Automotive & Transportation
Energy & Power Grid
Consumer Electronics
Industrial Applications
Telecommunications
Avionics, Military and Medical
Others
Major players covered
STMicroelectronics
Infineon
Wolfspeed
Rohm
onsemi
Microchip (Microsemi)
Fuji Electric
Navitas (GeneSiC)
Toshiba
San'an Optoelectronics
Littelfuse (IXYS)
CETC 55
WeEn Semiconductors
BASiC Semiconductor
SemiQ
Diodes Incorporated
KEC Corporation
PANJIT Group
Nexperia
Vishay Intertechnology
Zhuzhou CRRC Times Electric
China Resources Microelectronics Limited
Yangzhou Yangjie Electronic Technology
Changzhou Galaxy Century Microelectronics
Kyocera AVX
Sanken Electric
Texas Instruments
Shindengen
Hangzhou Silan Microelectronics
Jiangsu Jiejie Microelectronics
OmniVision Technologies
Suzhou Good-Ark Electronics
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Power Schottky Diode product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Power Schottky Diode, with price, sales quantity, revenue, and global market share of Power Schottky Diode from 2020 to 2025.
Chapter 3, the Power Schottky Diode competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Power Schottky Diode breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Power Schottky Diode market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Power Schottky Diode.
Chapter 14 and 15, to describe Power Schottky Diode sales channel, distributors, customers, research findings and conclusion.
Table of Contents
193 Pages
- 1 Market Overview
- 2 Manufacturers Profiles
- 3 Competitive Environment: Power Schottky Diode by Manufacturer
- 4 Consumption Analysis by Region
- 5 Market Segment by Type
- 6 Market Segment by Application
- 7 North America
- 8 Europe
- 9 Asia-Pacific
- 10 South America
- 11 Middle East & Africa
- 12 Market Dynamics
- 13 Raw Material and Industry Chain
- 14 Shipments by Distribution Channel
- 15 Research Findings and Conclusion
- 16 Appendix
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