Global IGBT and SiC Module for Automotive Supply, Demand and Key Producers, 2023-2029

Global IGBT and SiC Module for Automotive Supply, Demand and Key Producers, 2023-2029

The global IGBT and SiC Module for Automotive market size is expected to reach $ 17510 million by 2029, rising at a market growth of 20.0% CAGR during the forecast period (2023-2029).

The global key players of IGBT Power Module include Infineon, Mitsubishi Electric (Vincotech), Fuji Electric, Semikron Danfoss, StarPower Semiconductor, BYD, and Zhuzhou CRRC Times Electric, etc. The global six biggest players hold a share of 77 %.

The key players of SiC MOSFET modules are STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor, Microchip (Microsemi), Mitsubishi Electric (Vincotech) and Semikron Danfoss, etc. The top three players hold a share over 70 percent in 2022.

This report studies the IGBT modules and Silicon Carbide (SiC) Modules for EV (Electric Vehicle), used in Main Inverter (Electric Traction), OBC and DC-DC.

An IGBT Power Module is a power semiconductor component used in power electronic devices in several industries as they have high-power efficiency, high blocking voltage, and ability to work in low power. An IGBT Power Module is formed by arranging several IGBTs in parallel in a single casing.

Silicon carbide as a semiconductor has a wide band-gap, used in MOSFET it has very low switching losses and therefore allows higher switching frequencies compared to regular silicon devices. At the same time, it can be operated at higher temperatures and at higher voltages compared to traditional Si semiconductors. The use of SiC power semiconductors is expected to grow exponentially due to its crucial efficiency characteristics that enables cost reductions while at the same time improving system performance in a variety of applications such as EV chargers, solar inverters, e-mobility, and motor drives.

This report studies the global IGBT and SiC Module for Automotive production, demand, key manufacturers, and key regions.

This report is a detailed and comprehensive analysis of the world market for IGBT and SiC Module for Automotive, and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2022 as the base year. This report explores demand trends and competition, as well as details the characteristics of IGBT and SiC Module for Automotive that contribute to its increasing demand across many markets.

Highlights and key features of the study

Global IGBT and SiC Module for Automotive total production and demand, 2018-2029, (K Units)

Global IGBT and SiC Module for Automotive total production value, 2018-2029, (USD Million)

Global IGBT and SiC Module for Automotive production by region & country, production, value, CAGR, 2018-2029, (USD Million) & (K Units)

Global IGBT and SiC Module for Automotive consumption by region & country, CAGR, 2018-2029 & (K Units)

U.S. VS China: IGBT and SiC Module for Automotive domestic production, consumption, key domestic manufacturers and share

Global IGBT and SiC Module for Automotive production by manufacturer, production, price, value and market share 2018-2023, (USD Million) & (K Units)

Global IGBT and SiC Module for Automotive production by Type, production, value, CAGR, 2018-2029, (USD Million) & (K Units)

Global IGBT and SiC Module for Automotive production by Application production, value, CAGR, 2018-2029, (USD Million) & (K Units).

This reports profiles key players in the global IGBT and SiC Module for Automotive market based on the following parameters – company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, Mitsubishi Electric (Vincotech), Fuji Electric, Semikron Danfoss, Hitachi Power Semiconductor Device, Bosch, onsemi, Microchip (Microsemi) and STMicroelectronics, etc.

This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.

Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World IGBT and SiC Module for Automotive market.

Detailed Segmentation:

Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Units) and average price (US$/Unit) by manufacturer, by Type, and by Application. Data is given for the years 2018-2029 by year with 2022 as the base year, 2023 as the estimate year, and 2024-2029 as the forecast year.

Global IGBT and SiC Module for Automotive Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World

Global IGBT and SiC Module for Automotive Market, Segmentation by Type
Automotive IGBT Modules
Automotive SiC Modules

Global IGBT and SiC Module for Automotive Market, Segmentation by Application
Main Inverter (Electric Traction)
OBC
DC/DC Converter for EV/HEV
EV Charging

Companies Profiled:
Infineon
Mitsubishi Electric (Vincotech)
Fuji Electric
Semikron Danfoss
Hitachi Power Semiconductor Device
Bosch
onsemi
Microchip (Microsemi)
STMicroelectronics
Denso
Wolfspeed
Rohm
Navitas (GeneSiC)
BYD
StarPower Semiconductor
Zhuzhou CRRC Times Electric
BASiC Semiconductor
Guangdong AccoPower Semiconductor
Grecon Semiconductor (Shanghai) Co., Ltd

Key Questions Answered

1. How big is the global IGBT and SiC Module for Automotive market?

2. What is the demand of the global IGBT and SiC Module for Automotive market?

3. What is the year over year growth of the global IGBT and SiC Module for Automotive market?

4. What is the production and production value of the global IGBT and SiC Module for Automotive market?

5. Who are the key producers in the global IGBT and SiC Module for Automotive market?