According to our (Global Info Research) latest study, the global High-Side FET Drivers market size was valued at US$ 396 million in 2024 and is forecast to a readjusted size of USD 751 million by 2031 with a CAGR of 9.7% during review period.
High-side FET driver is an electronic component designed to control an N-channel MOSFET (or other types of FETs) in a high-side switching configuration. In such a configuration, the switch (typically a MOSFET) is placed between the load and the positive supply voltage. High-side FET drivers are essential because they enable the required voltage difference between the gate and source of the MOSFET to turn it on, especially when the source is tied to a higher voltage, such as the positive supply rail.
The global intelligent power switches market is expected to witness robust growth through 2023 due to rising demand of intelligent power switches in automotive and industrial application across globe.
This report is a detailed and comprehensive analysis for global High-Side FET Drivers market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global High-Side FET Drivers market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global High-Side FET Drivers market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global High-Side FET Drivers market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global High-Side FET Drivers market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for High-Side FET Drivers
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global High-Side FET Drivers market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include STMicroelectronics, Infineon, Diodes lncorporated, ROHM, Renesas, Fuji Electric, Texas Instruments, Microchip, onsemi, Toshiba, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
High-Side FET Drivers market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Single Channel
Multi Channel
Market segment by Application
Automotive
Industrial
Major players covered
STMicroelectronics
Infineon
Diodes lncorporated
ROHM
Renesas
Fuji Electric
Texas Instruments
Microchip
onsemi
Toshiba
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe High-Side FET Drivers product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of High-Side FET Drivers, with price, sales quantity, revenue, and global market share of High-Side FET Drivers from 2020 to 2025.
Chapter 3, the High-Side FET Drivers competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the High-Side FET Drivers breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and High-Side FET Drivers market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of High-Side FET Drivers.
Chapter 14 and 15, to describe High-Side FET Drivers sales channel, distributors, customers, research findings and conclusion.
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