According to our (Global Info Research) latest study, the global Gate Bipolar Transistors STATCOM market size was valued at US$ 750 million in 2024 and is forecast to a readjusted size of USD 1050 million by 2031 with a CAGR of 5.0% during review period.
STATCOM or Static Synchronous Compensator (STATCOM is also called Static Var Generator, SVG) is a shunt device, which uses force-commutated power electronics (i.e. GTO, IGBT) to control power flow and improve transient stability on electrical power networks. It is also a member of the so-called Flexible AC Transmission System (FACTS) devices. The STATCOM basically performs the same function as the static var compensators but with some advantages.
According to Component, SVG can be divided into GTO type, IGBT type, IGCT type, SCR type, GTR type, MOSFET type. FACTS-based power conversion equipment generally used full-controlled devices, mainly choose GTO, modified GTO (IGBT, MTO, ETO) and (HV) IGBT and other devices.
This report focuses IGBT based STATCOM.
Europe is the leading production market for Gate Bipolar Transistors STATCOM, accounting for about 40% of the global market, followed by China with about 20%.
Major manufacturers include ABB, Siemens, Rongxin, Hitachi and Mitsubishi Electric, with the top three accounting for about 40%.
This report is a detailed and comprehensive analysis for global Gate Bipolar Transistors STATCOM market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Gate Bipolar Transistors STATCOM market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2020-2031
Global Gate Bipolar Transistors STATCOM market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2020-2031
Global Gate Bipolar Transistors STATCOM market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (USD/Unit), 2020-2031
Global Gate Bipolar Transistors STATCOM market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (USD/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Gate Bipolar Transistors STATCOM
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Gate Bipolar Transistors STATCOM market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include ABB, Siemens, Rongxin, Sieyuan Electric, Hitachi, Mitsubishi Electric, S&C Electric, GE, AMSC, Ingeteam, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Gate Bipolar Transistors STATCOM market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Low Voltage STATCOM
High Voltage STATCOM
Market segment by Application
Renewable Energy
Electric Utilities
Industrial & Manufacturing
Others
Major players covered
ABB
Siemens
Rongxin
Sieyuan Electric
Hitachi
Mitsubishi Electric
S&C Electric
GE
AMSC
Ingeteam
Beijing In-power Electric Co., Ltd
Comsys AB
Merus Power
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Gate Bipolar Transistors STATCOM product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Gate Bipolar Transistors STATCOM, with price, sales quantity, revenue, and global market share of Gate Bipolar Transistors STATCOM from 2020 to 2025.
Chapter 3, the Gate Bipolar Transistors STATCOM competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Gate Bipolar Transistors STATCOM breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Gate Bipolar Transistors STATCOM market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Gate Bipolar Transistors STATCOM.
Chapter 14 and 15, to describe Gate Bipolar Transistors STATCOM sales channel, distributors, customers, research findings and conclusion.
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