Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors Market 2025 by Company, Regions, Type and Application, Forecast to 2031
Description
According to our (Global Info Research) latest study, the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size was valued at US$ 4547 million in 2024 and is forecast to a readjusted size of USD 23190 million by 2031 with a CAGR of 28.7% during review period.
Gallium Nitride (GaN) Power Semiconductors
Gallium Nitride (GaN) power semiconductors are power devices fabricated using GaN, a third-generation semiconductor material with a wide bandgap. These devices exhibit superior physical properties such as high electron mobility, high critical breakdown field, and high thermal conductivity. Due to these properties, GaN power semiconductors offer excellent performance in power electronics applications, including high-efficiency and high-frequency power conversion and amplification. They are widely used in wireless communications, consumer electronics, data centers, and renewable energy systems.
Silicon Carbide (SiC) Power Semiconductors
Silicon Carbide (SiC) power semiconductors are power devices made from SiC, a wide bandgap semiconductor material composed of silicon and carbon. SiC power devices have high electron energy bandgap and electron saturation drift velocity, allowing them to operate at higher temperatures and withstand higher electric field strengths. These properties make SiC power semiconductors ideal for applications in power electronics, new energy, automotive electronics, and other fields. They offer better thermal performance than traditional silicon-based power semiconductors, reducing cooling costs and complexity. Additionally, SiC power semiconductors have higher electrical conductivity and corrosion resistance, maintaining stable performance in harsh environments.
In summary, both GaN and SiC power semiconductors are advanced semiconductor materials with unique physical and electrical properties, offering significant advantages in power electronics applications.
Gallium nitride power semiconductor industry development trend
Technical progress and product application:
Technically, gallium nitride power semiconductors are gradually realizing the production of large-size wafers, such as Infineon has successfully developed the world's first 12-inch power gallium nitride wafer, which helps reduce costs and improve production efficiency.
In terms of product applications, the application of gallium nitride power semiconductors in the field of consumer electronics has gradually become better, and it has rapidly penetrated into home appliances, smart phones and other fields. At the same time, the application potential of new energy vehicles, data centers and motor drives is huge, especially in the on-board charger (OBC) and AI server power supply, gallium nitride has become one of the key solution technologies.
Challenges and Opportunities:
Gallium nitride is expensive to prepare, mainly due to the expensive raw materials and equipment required for its preparation process, as well as the high energy consumption. One of the current challenges is to reduce the preparation cost and improve the market competitiveness.
With the continuous advancement of technology and the further reduction of cost, gallium nitride power semiconductors are expected to achieve a wide range of applications in more fields, especially in scenarios with higher requirements for energy efficiency ratio, thermal management and design rationality.
Silicon carbide power semiconductor industry development trend
Technical progress and product application:
Silicon carbide is changing the power semiconductor industry with its high efficiency, compact design and lower cost. It has shown wide application prospects in the fields of electric vehicle chargers, photovoltaic, energy storage and industrial applications.
The automotive industry is one of the main drivers of silicon carbide power semiconductors. With the continuous growth of the electric vehicle market, the application of silicon carbide in electric vehicle traction inverters, on-board chargers and other aspects will continue to increase.
Capacity expansion and industry integration:
To meet the growing demand, the silicon carbide industry is turning to the production of larger wafers, such as 200mm wafers, to increase capacity and reduce costs.
The silicon carbide/gallium nitride industry has entered a period of consolidation, and mergers and acquisitions between manufacturers are common, and the industry concentration has been further improved.
Gallium nitride and silicon carbide, as the star materials in the power semiconductor industry, each show their unique technical advantages and market potential. With the continuous advancement of technology and the further reduction of costs, they are expected to achieve widespread application in more fields, promoting the continuous innovation and development of the power semiconductor industry. At the same time, industry consolidation and intensifying competition will also encourage manufacturers to continuously improve their competitiveness and bring more quality products and services to the market.
This report is a detailed and comprehensive analysis for global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market. Both quantitative and qualitative analyses are presented by company, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts, in consumption value ($ Million), 2020-2031
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts by region and country, in consumption value ($ Million), 2020-2031
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts, by Type and by Application, in consumption value ($ Million), 2020-2031
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market shares of main players, in revenue ($ Million), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market based on the following parameters - company overview, revenue, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, Wolfspeed(CREE), ROHM, STMicroelectronics, Onsemi, Mitsubishi Electric Corporation, Fuji Electric, Littelfuse, Global Power Technology, BASiC Semiconductor, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market segmentation
Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for Consumption Value by Type and by Application. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor
Market segment by Application
Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other
Market segment by players, this report covers
Infineon
Wolfspeed(CREE)
ROHM
STMicroelectronics
Onsemi
Mitsubishi Electric Corporation
Fuji Electric
Littelfuse
Global Power Technology
BASiC Semiconductor
BYD Semiconductor
CETC 55
CETC 13
Zhuzhou CRRC Times Electric
Sanan Optoelectronics
China Resources Microelectronics
Hangzhou Silan Microelectronics
Yangzhou Yangjie Electronic Technology
StarPower Semiconductor
Market segment by regions, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, UK, Russia, Italy and Rest of Europe)
Asia-Pacific (China, Japan, South Korea, India, Southeast Asia and Rest of Asia-Pacific)
South America (Brazil, Rest of South America)
Middle East & Africa (Turkey, Saudi Arabia, UAE, Rest of Middle East & Africa)
The content of the study subjects, includes a total of 13 chapters:
Chapter 1, to describe Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top players of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors, with revenue, gross margin, and global market share of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors from 2020 to 2025.
Chapter 3, the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors competitive situation, revenue, and global market share of top players are analyzed emphatically by landscape contrast.
Chapter 4 and 5, to segment the market size by Type and by Application, with consumption value and growth rate by Type, by Application, from 2020 to 2031
Chapter 6, 7, 8, 9, and 10, to break the market size data at the country level, with revenue and market share for key countries in the world, from 2020 to 2025.and Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market forecast, by regions, by Type and by Application, with consumption value, from 2026 to 2031.
Chapter 11, market dynamics, drivers, restraints, trends, Porters Five Forces analysis.
Chapter 12, the key raw materials and key suppliers, and industry chain of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors.
Chapter 13, to describe Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors research findings and conclusion.
Gallium Nitride (GaN) Power Semiconductors
Gallium Nitride (GaN) power semiconductors are power devices fabricated using GaN, a third-generation semiconductor material with a wide bandgap. These devices exhibit superior physical properties such as high electron mobility, high critical breakdown field, and high thermal conductivity. Due to these properties, GaN power semiconductors offer excellent performance in power electronics applications, including high-efficiency and high-frequency power conversion and amplification. They are widely used in wireless communications, consumer electronics, data centers, and renewable energy systems.
Silicon Carbide (SiC) Power Semiconductors
Silicon Carbide (SiC) power semiconductors are power devices made from SiC, a wide bandgap semiconductor material composed of silicon and carbon. SiC power devices have high electron energy bandgap and electron saturation drift velocity, allowing them to operate at higher temperatures and withstand higher electric field strengths. These properties make SiC power semiconductors ideal for applications in power electronics, new energy, automotive electronics, and other fields. They offer better thermal performance than traditional silicon-based power semiconductors, reducing cooling costs and complexity. Additionally, SiC power semiconductors have higher electrical conductivity and corrosion resistance, maintaining stable performance in harsh environments.
In summary, both GaN and SiC power semiconductors are advanced semiconductor materials with unique physical and electrical properties, offering significant advantages in power electronics applications.
Gallium nitride power semiconductor industry development trend
Technical progress and product application:
Technically, gallium nitride power semiconductors are gradually realizing the production of large-size wafers, such as Infineon has successfully developed the world's first 12-inch power gallium nitride wafer, which helps reduce costs and improve production efficiency.
In terms of product applications, the application of gallium nitride power semiconductors in the field of consumer electronics has gradually become better, and it has rapidly penetrated into home appliances, smart phones and other fields. At the same time, the application potential of new energy vehicles, data centers and motor drives is huge, especially in the on-board charger (OBC) and AI server power supply, gallium nitride has become one of the key solution technologies.
Challenges and Opportunities:
Gallium nitride is expensive to prepare, mainly due to the expensive raw materials and equipment required for its preparation process, as well as the high energy consumption. One of the current challenges is to reduce the preparation cost and improve the market competitiveness.
With the continuous advancement of technology and the further reduction of cost, gallium nitride power semiconductors are expected to achieve a wide range of applications in more fields, especially in scenarios with higher requirements for energy efficiency ratio, thermal management and design rationality.
Silicon carbide power semiconductor industry development trend
Technical progress and product application:
Silicon carbide is changing the power semiconductor industry with its high efficiency, compact design and lower cost. It has shown wide application prospects in the fields of electric vehicle chargers, photovoltaic, energy storage and industrial applications.
The automotive industry is one of the main drivers of silicon carbide power semiconductors. With the continuous growth of the electric vehicle market, the application of silicon carbide in electric vehicle traction inverters, on-board chargers and other aspects will continue to increase.
Capacity expansion and industry integration:
To meet the growing demand, the silicon carbide industry is turning to the production of larger wafers, such as 200mm wafers, to increase capacity and reduce costs.
The silicon carbide/gallium nitride industry has entered a period of consolidation, and mergers and acquisitions between manufacturers are common, and the industry concentration has been further improved.
Gallium nitride and silicon carbide, as the star materials in the power semiconductor industry, each show their unique technical advantages and market potential. With the continuous advancement of technology and the further reduction of costs, they are expected to achieve widespread application in more fields, promoting the continuous innovation and development of the power semiconductor industry. At the same time, industry consolidation and intensifying competition will also encourage manufacturers to continuously improve their competitiveness and bring more quality products and services to the market.
This report is a detailed and comprehensive analysis for global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market. Both quantitative and qualitative analyses are presented by company, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts, in consumption value ($ Million), 2020-2031
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts by region and country, in consumption value ($ Million), 2020-2031
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size and forecasts, by Type and by Application, in consumption value ($ Million), 2020-2031
Global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market shares of main players, in revenue ($ Million), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market based on the following parameters - company overview, revenue, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Infineon, Wolfspeed(CREE), ROHM, STMicroelectronics, Onsemi, Mitsubishi Electric Corporation, Fuji Electric, Littelfuse, Global Power Technology, BASiC Semiconductor, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market segmentation
Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for Consumption Value by Type and by Application. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
Silicon Carbide Power Semiconductor
Gallium Nitride Power Semiconductor
Market segment by Application
Consumer Electronics
New Energy Grid Connection
Rail
Industrial Motor
Ups Power Supply
New Energy Vehicles
Other
Market segment by players, this report covers
Infineon
Wolfspeed(CREE)
ROHM
STMicroelectronics
Onsemi
Mitsubishi Electric Corporation
Fuji Electric
Littelfuse
Global Power Technology
BASiC Semiconductor
BYD Semiconductor
CETC 55
CETC 13
Zhuzhou CRRC Times Electric
Sanan Optoelectronics
China Resources Microelectronics
Hangzhou Silan Microelectronics
Yangzhou Yangjie Electronic Technology
StarPower Semiconductor
Market segment by regions, regional analysis covers
North America (United States, Canada and Mexico)
Europe (Germany, France, UK, Russia, Italy and Rest of Europe)
Asia-Pacific (China, Japan, South Korea, India, Southeast Asia and Rest of Asia-Pacific)
South America (Brazil, Rest of South America)
Middle East & Africa (Turkey, Saudi Arabia, UAE, Rest of Middle East & Africa)
The content of the study subjects, includes a total of 13 chapters:
Chapter 1, to describe Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top players of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors, with revenue, gross margin, and global market share of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors from 2020 to 2025.
Chapter 3, the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors competitive situation, revenue, and global market share of top players are analyzed emphatically by landscape contrast.
Chapter 4 and 5, to segment the market size by Type and by Application, with consumption value and growth rate by Type, by Application, from 2020 to 2031
Chapter 6, 7, 8, 9, and 10, to break the market size data at the country level, with revenue and market share for key countries in the world, from 2020 to 2025.and Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market forecast, by regions, by Type and by Application, with consumption value, from 2026 to 2031.
Chapter 11, market dynamics, drivers, restraints, trends, Porters Five Forces analysis.
Chapter 12, the key raw materials and key suppliers, and industry chain of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors.
Chapter 13, to describe Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors research findings and conclusion.
Table of Contents
121 Pages
- 1 Market Overview
- 2 Company Profiles
- 3 Market Competition, by Players
- 4 Market Size Segment by Type
- 5 Market Size Segment by Application
- 6 North America
- 7 Europe
- 8 Asia-Pacific
- 9 South America
- 10 Middle East & Africa
- 11 Market Dynamics
- 12 Industry Chain Analysis
- 13 Research Findings and Conclusion
- 14 Appendix
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