Global GaN Power Devices Supply, Demand and Key Producers, 2026-2032
Description
The global GaN Power Devices market size is expected to reach $ 2776 million by 2032, rising at a market growth of 25.0% CAGR during the forecast period (2026-2032).
Power GaN (Gallium Nitride) devices are used in high-efficiency power electronics, especially where compact, high-performance systems are needed. They are increasingly popular in applications that require high power density, fast switching speeds, and high efficiency, such as in electric vehicles (EVs), data centers, consumer electronics, and renewable energy systems.
The GaN Power Devices include GaN HEMT Discretes, GaN SiP, and SoC, etc.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
2025 is shaping up as an exciting year for GaN, we are still early in the GaN revolution with huge opportunities still ahead in the short, medium, and long term.
Short term, GaN has just begun to penetrate the power supply market, and adoption is accelerating across a wide range of low-power applications, including several mentioned above—metering, appliances, TVs, automotive and residential networking.
In the medium term, we believe that the opportunity for GaN at high power levels is massive, nowhere more so than in AI data centers. While data center operators are eager for innovative power solutions for AI, adoption of GaN has been inhibited by the challenges of using discrete GaN in high reliability systems.
Longer term, we believe GaN can achieve power levels sufficient for EV drivetrains at much lower cost than silicon carbide, the incumbent technology in many EVs.
This report studies the global GaN Power Devices production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for GaN Power Devices and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of GaN Power Devices that contribute to its increasing demand across many markets.
Highlights and key features of the study
Global GaN Power Devices total production and demand, 2021-2032, (K Pcs)
Global GaN Power Devices total production value, 2021-2032, (USD Million)
Global GaN Power Devices production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (K Pcs), (based on production site)
Global GaN Power Devices consumption by region & country, CAGR, 2021-2032 & (K Pcs)
U.S. VS China: GaN Power Devices domestic production, consumption, key domestic manufacturers and share
Global GaN Power Devices production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (K Pcs)
Global GaN Power Devices production by Type, production, value, CAGR, 2021-2032, (USD Million) & (K Pcs)
Global GaN Power Devices production by Application, production, value, CAGR, 2021-2032, (USD Million) & (K Pcs)
This report profiles key players in the global GaN Power Devices market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Innoscience, Navitas (GeneSiC), Efficient Power Conversion Corporation (EPC), Power Integrations, Inc., Infineon (GaN Systems), Renesas Electronics (Transphorm), Texas Instruments, Rohm, STMicroelectronics, Nexperia, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World GaN Power Devices market
Detailed Segmentation:
Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Pcs) and average price (US$/Pcs) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.
Global GaN Power Devices Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World
Global GaN Power Devices Market, Segmentation by Type:
GaN Power >600V
GaN Power <200V
Global GaN Power Devices Market, Segmentation by Application:
Mobile and Consumer
Telecom and Infrastructure
Automotive and Mobility
Industrial
Defense & Aerospace
Others
Companies Profiled:
Innoscience
Navitas (GeneSiC)
Efficient Power Conversion Corporation (EPC)
Power Integrations, Inc.
Infineon (GaN Systems)
Renesas Electronics (Transphorm)
Texas Instruments
Rohm
STMicroelectronics
Nexperia
China Resources Microelectronics Limited
CorEnergy
Qingdao Cohenius Microelectronics
Hangzhou Silan Microelectronics
Runxin Microelectronics
GaNext
GaNPower
CloudSemi
Key Questions Answered:
1. How big is the global GaN Power Devices market?
2. What is the demand of the global GaN Power Devices market?
3. What is the year over year growth of the global GaN Power Devices market?
4. What is the production and production value of the global GaN Power Devices market?
5. Who are the key producers in the global GaN Power Devices market?
6. What are the growth factors driving the market demand?
Power GaN (Gallium Nitride) devices are used in high-efficiency power electronics, especially where compact, high-performance systems are needed. They are increasingly popular in applications that require high power density, fast switching speeds, and high efficiency, such as in electric vehicles (EVs), data centers, consumer electronics, and renewable energy systems.
The GaN Power Devices include GaN HEMT Discretes, GaN SiP, and SoC, etc.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
2025 is shaping up as an exciting year for GaN, we are still early in the GaN revolution with huge opportunities still ahead in the short, medium, and long term.
Short term, GaN has just begun to penetrate the power supply market, and adoption is accelerating across a wide range of low-power applications, including several mentioned above—metering, appliances, TVs, automotive and residential networking.
In the medium term, we believe that the opportunity for GaN at high power levels is massive, nowhere more so than in AI data centers. While data center operators are eager for innovative power solutions for AI, adoption of GaN has been inhibited by the challenges of using discrete GaN in high reliability systems.
Longer term, we believe GaN can achieve power levels sufficient for EV drivetrains at much lower cost than silicon carbide, the incumbent technology in many EVs.
This report studies the global GaN Power Devices production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for GaN Power Devices and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of GaN Power Devices that contribute to its increasing demand across many markets.
Highlights and key features of the study
Global GaN Power Devices total production and demand, 2021-2032, (K Pcs)
Global GaN Power Devices total production value, 2021-2032, (USD Million)
Global GaN Power Devices production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (K Pcs), (based on production site)
Global GaN Power Devices consumption by region & country, CAGR, 2021-2032 & (K Pcs)
U.S. VS China: GaN Power Devices domestic production, consumption, key domestic manufacturers and share
Global GaN Power Devices production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (K Pcs)
Global GaN Power Devices production by Type, production, value, CAGR, 2021-2032, (USD Million) & (K Pcs)
Global GaN Power Devices production by Application, production, value, CAGR, 2021-2032, (USD Million) & (K Pcs)
This report profiles key players in the global GaN Power Devices market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Innoscience, Navitas (GeneSiC), Efficient Power Conversion Corporation (EPC), Power Integrations, Inc., Infineon (GaN Systems), Renesas Electronics (Transphorm), Texas Instruments, Rohm, STMicroelectronics, Nexperia, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World GaN Power Devices market
Detailed Segmentation:
Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (K Pcs) and average price (US$/Pcs) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.
Global GaN Power Devices Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World
Global GaN Power Devices Market, Segmentation by Type:
GaN Power >600V
GaN Power <200V
Global GaN Power Devices Market, Segmentation by Application:
Mobile and Consumer
Telecom and Infrastructure
Automotive and Mobility
Industrial
Defense & Aerospace
Others
Companies Profiled:
Innoscience
Navitas (GeneSiC)
Efficient Power Conversion Corporation (EPC)
Power Integrations, Inc.
Infineon (GaN Systems)
Renesas Electronics (Transphorm)
Texas Instruments
Rohm
STMicroelectronics
Nexperia
China Resources Microelectronics Limited
CorEnergy
Qingdao Cohenius Microelectronics
Hangzhou Silan Microelectronics
Runxin Microelectronics
GaNext
GaNPower
CloudSemi
Key Questions Answered:
1. How big is the global GaN Power Devices market?
2. What is the demand of the global GaN Power Devices market?
3. What is the year over year growth of the global GaN Power Devices market?
4. What is the production and production value of the global GaN Power Devices market?
5. Who are the key producers in the global GaN Power Devices market?
6. What are the growth factors driving the market demand?
Table of Contents
147 Pages
- 1 Supply Summary
- 2 Demand Summary
- 3 World Manufacturers Competitive Analysis
- 4 United States VS China VS Rest of the World
- 5 Market Analysis by Type
- 6 Market Analysis by Application
- 7 Company Profiles
- 8 Industry Chain Analysis
- 9 Research Findings and Conclusion
- 10 Appendix
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