According to our (Global Info Research) latest study, the global GaN Modules market size was valued at US$ 3.9 million in 2024 and is forecast to a readjusted size of USD 142 million by 2031 with a CAGR of 57.6% during review period.
Like SiC (silicon carbide), GaN (gallium nitride) is a next-generation semiconductor material that is coming into the spotlight and finding a growing range of practical uses as a substitute for Si (silicon)—the longstanding mainstream of semiconductor materials. GaN is notable for superior switching performance. Its two most outstanding features, higher switching frequency and higher efficiency, combine to yield substantially reduced power losses. In addition to making it easy to reduce the size and increase the efficiency of power supply and motor drive circuits, as well as power converter and inverter systems, GaN is also attractive because it enables lower device production costs than SiC.
This report studies the GaN Modules, include GaN power modules and GaN IPM.
The typical products of GaN power modules include Infineon (GaN Systems) 650V 150A Full-Bridge Module and 650V 300A 3-Phase GaN Power Module.
The typical products of GaN IPM include Texas Instruments (TI)’s DRV7308.
Currently the GaN modules are in the stage of development, sample and promotion.
The global Power GaN Device market was valued at US$ 341.3 million in 2024 and is anticipated to reach US$ 3002.7 million by 2035, witnessing a CAGR of 21.01% during the forecast period 2025-2035.
Currently the GaN modules are in the stage of development, sample and promotion. According to our research, the global GaN Modules market was valued at US$ 3.76 million in 2024 and is anticipated to reach US$ 396 million by 2035, witnessing a CAGR of 46.05% during the forecast period 2025-2035.
According to our research, only Texas Instruments (TI) has started mass production of GaN Modules from 2024. Other manufacturers are currently in the stage of development, sample and promotion.
Currently The key manufacturers of GaN Modules include Texas Instruments (TI) , Kyocera AVX, QPT, Infineon (GaN Systems), Mitsubishi Electric (Vincotech), Fujitsu General Electronics Limited, Sensitron Semiconductor, and VisIC Technologies, etc.
GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. It is expected that GaN power devices market share will further increase in the next few years. At present, GaN power devices are dominated by Power Integrations, Inc., Navitas Semiconductor, Infineon (GaN Systems), Efficient Power Conversion Corporation (EPC), Innoscience, and Renesas Electronics (Transphorm), among which Innoscience is the world's largest GaN power device manufacturer.
In the next few years, GaN modules are expected to grow rapidly, with broad development potential in the fields of motor control, photovoltaic inverters, new energy vehicles, home appliances, UPS/servers, etc.
This report is a detailed and comprehensive analysis for global GaN Modules market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global GaN Modules market size and forecasts, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Modules market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Modules market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Units), and average selling prices (US$/Unit), 2020-2031
Global GaN Modules market shares of main players, shipments in revenue ($ Million), sales quantity (K Units), and ASP (US$/Unit), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for GaN Modules
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global GaN Modules market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Texas Instruments (TI), Kyocera AVX, QPT, Infineon (GaN Systems), Mitsubishi Electric (Vincotech), Fujitsu General Electronics Limited, Sensitron Semiconductor, NJSM Electronics, VisIC Technologies, X-IPM Technology, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
GaN Modules market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
GaN Power Module
GaN Intelligent Power Module (IPM)
Market segment by Application
Home Appliances/Consumer
Servers/UPS
Solar Inverters
Motor Drives
Electric Vehicles (EVs)
HVAC
Others
Major players covered
Texas Instruments (TI)
Kyocera AVX
QPT
Infineon (GaN Systems)
Mitsubishi Electric (Vincotech)
Fujitsu General Electronics Limited
Sensitron Semiconductor
NJSM Electronics
VisIC Technologies
X-IPM Technology
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe GaN Modules product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of GaN Modules, with price, sales quantity, revenue, and global market share of GaN Modules from 2020 to 2025.
Chapter 3, the GaN Modules competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the GaN Modules breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and GaN Modules market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of GaN Modules.
Chapter 14 and 15, to describe GaN Modules sales channel, distributors, customers, research findings and conclusion.
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