Global GaN Epitaxial Supply, Demand and Key Producers, 2026-2032
Description
The global GaN Epitaxial market size is expected to reach $ 2347 million by 2032, rising at a market growth of 15.9% CAGR during the forecast period (2026-2032).
Epitaxial wafer refers to a product formed by growing a layer of new single crystal on a single crystal substrate. Epitaxial wafer determines about 70% of the performance of the device and is an important raw material for semiconductor chips. As a semiconductor raw material, epitaxial wafer is located at the upstream of the semiconductor industry chain and is a supporting industry for the semiconductor manufacturing industry. Epitaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to perform crystal epitaxial growth on substrate materials to make epitaxial wafers. Epitaxial wafers are then made into wafers through manufacturing links such as lithography, thin film deposition, and etching. Wafers are further cut into bare chips, and bare chips are finally made into chips through packaging links such as fixing on the substrate, adding a protective shell, connecting the chip circuit pins with the external substrate with wires, and testing links such as circuit testing and performance testing. The above chip production links need to interact with the chip design link to ensure that the final chip meets the chip design requirements.
Based on the performance of gallium nitride, gallium nitride epitaxial wafers are mainly suitable for applications under high power, high frequency, medium and low voltage, which are specifically reflected in: 1) High bandgap width: The high bandgap width improves the voltage resistance level of gallium nitride devices and can output higher power than gallium arsenide devices, which is particularly suitable for 5G communication base stations, military radars and other fields; 2) High conversion efficiency: The on-resistance of gallium nitride switching power electronic devices is 3 orders of magnitude lower than that of silicon devices, which can significantly reduce switching conduction losses; 3) High thermal conductivity: The high thermal conductivity of gallium nitride gives it excellent heat dissipation performance, which is suitable for the production of devices in high power, high temperature and other fields; 4) Breakdown electric field strength: Although the breakdown electric field strength of gallium nitride is close to that of silicon nitride, it is affected by factors such as semiconductor technology and material lattice mismatch. The voltage tolerance of gallium nitride devices is usually around 1000V, and the safe operating voltage is usually below 650V.
GaN devices can conduct electrons more efficiently than silicon devices and can withstand higher electric fields. It exceeds the performance of silicon devices in terms of speed, temperature and power, and has gradually replaced silicon-based devices in power conversion and RF applications. Due to the higher efficiency, significantly reduced size, lighter weight and better heat dissipation performance of GaN-based systems, it has begun to replace traditional silicon devices on the market and has enabled new applications such as lidar and RF envelope tracking.
With the continuous update and generation of LED chip technology and process, the luminous efficiency, technical performance, product quality and cost-effectiveness of LED lighting products have been greatly improved; coupled with the increasing number of related enterprises and investments in the industrial chain, the production and manufacturing technology of LED light source manufacturing and supporting industries has been continuously upgraded, and the cost-effectiveness of large-scale production of terminal products has been further improved. At present, LED lighting products have become the mainstream application in application fields such as home lighting, outdoor lighting, industrial lighting, commercial lighting, landscape lighting, backlight display, etc. The market penetration rate of LED lighting products replacing traditional lighting products continues to increase, and market demand continues to grow. There are still many difficulties in the development and industrialization of Micro-LED display technology. At the same time, Micro-LED epitaxy has stricter requirements on defects and uniformity than traditional LEDs. In the future, the penetration of gallium nitride technology in the LED optoelectronic field will gradually expand.
This report studies the global GaN Epitaxial production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for GaN Epitaxial and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of GaN Epitaxial that contribute to its increasing demand across many markets.
Highlights and key features of the study
Global GaN Epitaxial total production and demand, 2021-2032, (Units)
Global GaN Epitaxial total production value, 2021-2032, (USD Million)
Global GaN Epitaxial production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (Units), (based on production site)
Global GaN Epitaxial consumption by region & country, CAGR, 2021-2032 & (Units)
U.S. VS China: GaN Epitaxial domestic production, consumption, key domestic manufacturers and share
Global GaN Epitaxial production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (Units)
Global GaN Epitaxial production by Type, production, value, CAGR, 2021-2032, (USD Million) & (Units)
Global GaN Epitaxial production by Application, production, value, CAGR, 2021-2032, (USD Million) & (Units)
This report profiles key players in the global GaN Epitaxial market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include NTT AT, Wolfspeed, SCIOCS (Sumitomo), EpiGaN (Soitec), DOWA Electronics Materials, IQE, Enkris Semiconductor Inc, CorEnergy, GLC, Genettice, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World GaN Epitaxial market
Detailed Segmentation:
Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (Units) and average price (US$/Unit) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.
Global GaN Epitaxial Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World
Global GaN Epitaxial Market, Segmentation by Type:
GaN-on-Sapphire
GaN-On-Si
GaN-On-SiC
GaN-on-GaN
Other
Global GaN Epitaxial Market, Segmentation by Application:
Photoelectric
Electronic Power
RF
Companies Profiled:
NTT AT
Wolfspeed
SCIOCS (Sumitomo)
EpiGaN (Soitec)
DOWA Electronics Materials
IQE
Enkris Semiconductor Inc
CorEnergy
GLC
Genettice
Suzhou Nanowin
Episil-Precision Inc
Xinguan Technology
Shanxi Yuteng
Key Questions Answered:
1. How big is the global GaN Epitaxial market?
2. What is the demand of the global GaN Epitaxial market?
3. What is the year over year growth of the global GaN Epitaxial market?
4. What is the production and production value of the global GaN Epitaxial market?
5. Who are the key producers in the global GaN Epitaxial market?
6. What are the growth factors driving the market demand?
Epitaxial wafer refers to a product formed by growing a layer of new single crystal on a single crystal substrate. Epitaxial wafer determines about 70% of the performance of the device and is an important raw material for semiconductor chips. As a semiconductor raw material, epitaxial wafer is located at the upstream of the semiconductor industry chain and is a supporting industry for the semiconductor manufacturing industry. Epitaxial wafer manufacturers use CVD (Chemical Vapor Deposition) equipment, MBE (Molecular Beam Epitaxy) equipment, HVPE equipment, etc. to perform crystal epitaxial growth on substrate materials to make epitaxial wafers. Epitaxial wafers are then made into wafers through manufacturing links such as lithography, thin film deposition, and etching. Wafers are further cut into bare chips, and bare chips are finally made into chips through packaging links such as fixing on the substrate, adding a protective shell, connecting the chip circuit pins with the external substrate with wires, and testing links such as circuit testing and performance testing. The above chip production links need to interact with the chip design link to ensure that the final chip meets the chip design requirements.
Based on the performance of gallium nitride, gallium nitride epitaxial wafers are mainly suitable for applications under high power, high frequency, medium and low voltage, which are specifically reflected in: 1) High bandgap width: The high bandgap width improves the voltage resistance level of gallium nitride devices and can output higher power than gallium arsenide devices, which is particularly suitable for 5G communication base stations, military radars and other fields; 2) High conversion efficiency: The on-resistance of gallium nitride switching power electronic devices is 3 orders of magnitude lower than that of silicon devices, which can significantly reduce switching conduction losses; 3) High thermal conductivity: The high thermal conductivity of gallium nitride gives it excellent heat dissipation performance, which is suitable for the production of devices in high power, high temperature and other fields; 4) Breakdown electric field strength: Although the breakdown electric field strength of gallium nitride is close to that of silicon nitride, it is affected by factors such as semiconductor technology and material lattice mismatch. The voltage tolerance of gallium nitride devices is usually around 1000V, and the safe operating voltage is usually below 650V.
GaN devices can conduct electrons more efficiently than silicon devices and can withstand higher electric fields. It exceeds the performance of silicon devices in terms of speed, temperature and power, and has gradually replaced silicon-based devices in power conversion and RF applications. Due to the higher efficiency, significantly reduced size, lighter weight and better heat dissipation performance of GaN-based systems, it has begun to replace traditional silicon devices on the market and has enabled new applications such as lidar and RF envelope tracking.
With the continuous update and generation of LED chip technology and process, the luminous efficiency, technical performance, product quality and cost-effectiveness of LED lighting products have been greatly improved; coupled with the increasing number of related enterprises and investments in the industrial chain, the production and manufacturing technology of LED light source manufacturing and supporting industries has been continuously upgraded, and the cost-effectiveness of large-scale production of terminal products has been further improved. At present, LED lighting products have become the mainstream application in application fields such as home lighting, outdoor lighting, industrial lighting, commercial lighting, landscape lighting, backlight display, etc. The market penetration rate of LED lighting products replacing traditional lighting products continues to increase, and market demand continues to grow. There are still many difficulties in the development and industrialization of Micro-LED display technology. At the same time, Micro-LED epitaxy has stricter requirements on defects and uniformity than traditional LEDs. In the future, the penetration of gallium nitride technology in the LED optoelectronic field will gradually expand.
This report studies the global GaN Epitaxial production, demand, key manufacturers, and key regions.
This report is a detailed and comprehensive analysis of the world market for GaN Epitaxial and provides market size (US$ million) and Year-over-Year (YoY) Growth, considering 2025 as the base year. This report explores demand trends and competition, as well as details the characteristics of GaN Epitaxial that contribute to its increasing demand across many markets.
Highlights and key features of the study
Global GaN Epitaxial total production and demand, 2021-2032, (Units)
Global GaN Epitaxial total production value, 2021-2032, (USD Million)
Global GaN Epitaxial production by region & country, production, value, CAGR, 2021-2032, (USD Million) & (Units), (based on production site)
Global GaN Epitaxial consumption by region & country, CAGR, 2021-2032 & (Units)
U.S. VS China: GaN Epitaxial domestic production, consumption, key domestic manufacturers and share
Global GaN Epitaxial production by manufacturer, production, price, value and market share 2021-2026, (USD Million) & (Units)
Global GaN Epitaxial production by Type, production, value, CAGR, 2021-2032, (USD Million) & (Units)
Global GaN Epitaxial production by Application, production, value, CAGR, 2021-2032, (USD Million) & (Units)
This report profiles key players in the global GaN Epitaxial market based on the following parameters - company overview, production, value, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include NTT AT, Wolfspeed, SCIOCS (Sumitomo), EpiGaN (Soitec), DOWA Electronics Materials, IQE, Enkris Semiconductor Inc, CorEnergy, GLC, Genettice, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Stakeholders would have ease in decision-making through various strategy matrices used in analyzing the World GaN Epitaxial market
Detailed Segmentation:
Each section contains quantitative market data including market by value (US$ Millions), volume (production, consumption) & (Units) and average price (US$/Unit) by manufacturer, by Type, and by Application. Data is given for the years 2021-2032 by year with 2025 as the base year, 2026 as the estimate year, and 2027-2032 as the forecast year.
Global GaN Epitaxial Market, By Region:
United States
China
Europe
Japan
South Korea
ASEAN
India
Rest of World
Global GaN Epitaxial Market, Segmentation by Type:
GaN-on-Sapphire
GaN-On-Si
GaN-On-SiC
GaN-on-GaN
Other
Global GaN Epitaxial Market, Segmentation by Application:
Photoelectric
Electronic Power
RF
Companies Profiled:
NTT AT
Wolfspeed
SCIOCS (Sumitomo)
EpiGaN (Soitec)
DOWA Electronics Materials
IQE
Enkris Semiconductor Inc
CorEnergy
GLC
Genettice
Suzhou Nanowin
Episil-Precision Inc
Xinguan Technology
Shanxi Yuteng
Key Questions Answered:
1. How big is the global GaN Epitaxial market?
2. What is the demand of the global GaN Epitaxial market?
3. What is the year over year growth of the global GaN Epitaxial market?
4. What is the production and production value of the global GaN Epitaxial market?
5. Who are the key producers in the global GaN Epitaxial market?
6. What are the growth factors driving the market demand?
Table of Contents
130 Pages
- 1 Supply Summary
- 2 Demand Summary
- 3 World Manufacturers Competitive Analysis
- 4 United States VS China VS Rest of the World
- 5 Market Analysis by Type
- 6 Market Analysis by Application
- 7 Company Profiles
- 8 Industry Chain Analysis
- 9 Research Findings and Conclusion
- 10 Appendix
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