Global Conductive Silicon Carbide Wafer Market 2025 by Manufacturers, Regions, Type and Application, Forecast to 2031
Description
According to our (Global Info Research) latest study, the global Conductive Silicon Carbide Wafer market size was valued at US$ 814 million in 2024 and is forecast to a readjusted size of USD 2112 million by 2031 with a CAGR of 14.7% during review period.
Silicon carbide is an inorganic substance with the chemical formula SiC. It is made of raw materials such as quartz sand, petroleum coke (or coal coke), and sawdust (salt is needed to produce green silicon carbide) through high-temperature smelting in a resistance furnace. Silicon carbide is a semiconductor that exists in nature in the form of the extremely rare mineral moissanite. Since 1893, it has been mass-produced as powder and crystals for use as abrasives, etc. Among non-oxide high-tech refractory raw materials such as C, N, and B, silicon carbide is the most widely used and economical one, which can be called diamond sand or refractory sand.
Wafer refers to the cutting, grinding, and polishing of crystals along a specific crystal direction to obtain a clean single wafer with specific crystal planes and appropriate electrical, optical, and mechanical properties for growing epitaxial layers. Silicon carbide wafer is the core material of the newly developed wide bandgap semiconductor. The devices made with it have the characteristics of high temperature resistance, high voltage resistance, high frequency, high power, and radiation resistance. It has the advantages of fast switching speed and high efficiency, which can greatly reduce product power consumption, improve energy conversion efficiency, and reduce product volume.
Conductive silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of conductive silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based power devices through homoepitaxial growth, wafer manufacturing, packaging and testing, and are important basic materials for the development of the third-generation semiconductor industry. Conductive silicon carbide wafers can be used to manufacture power devices such as SiC diodes and metal-oxide semiconductor field-effect transistors (MOSFETs) through homoepitaxial growth and device manufacturing processes. These devices are widely used in new energy vehicles, photovoltaic power generation, rail transportation, smart grids, aerospace and other fields.
According to the survey and statistics of our company's "Semiconductor Research Center", silicon carbide substrate manufacturers are currently mainly distributed in the United States, Europe, Japan and China, especially in the Chinese market. In recent years, investment in silicon carbide related projects has been very active. It is expected that in the next few years, Chinese manufacturers will play an important role in all links of the silicon carbide industry chain. Conductive substrates are widely used in power devices. Fields such as new energy vehicles, photovoltaics, high-speed rail, and industrial power supplies are its downstream markets. Power devices are very important basic components in the power electronics industry. Conductive silicon carbide substrates are mainly used to manufacture power devices. This type of power device is widely used in many aspects such as power conversion and circuit control of power equipment, and is related to all aspects of economy and life. Silicon carbide power devices can withstand high voltage, high temperature, and low loss. These excellent properties are in line with the requirements of power devices, so they have been rapidly promoted and applied in new energy vehicles, photovoltaic power generation and other fields in recent years.
This report is a detailed and comprehensive analysis for global Conductive Silicon Carbide Wafer market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Conductive Silicon Carbide Wafer market size and forecasts, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Conductive Silicon Carbide Wafer market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Conductive Silicon Carbide Wafer market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Conductive Silicon Carbide Wafer market shares of main players, shipments in revenue ($ Million), sales quantity (K Pcs), and ASP (US$/Pcs), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Conductive Silicon Carbide Wafer
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Conductive Silicon Carbide Wafer market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Wolfspeed, SK Siltron, ROHM Group (SiCrystal), Coherent, Resonac, STMicroelectronics, TankeBlue, SICC, Hebei Synlight Crystal, CETC, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Conductive Silicon Carbide Wafer market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
4 Inch SiC Wafer
6 Inch SiC Wafer
8 Inch SiC Wafer
Market segment by Application
New Energy Vehicles
Charging Piles
Photovoltaic and Wind Power
Others
Major players covered
Wolfspeed
SK Siltron
ROHM Group (SiCrystal)
Coherent
Resonac
STMicroelectronics
TankeBlue
SICC
Hebei Synlight Crystal
CETC
San'an Optoelectronics
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Conductive Silicon Carbide Wafer product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Conductive Silicon Carbide Wafer, with price, sales quantity, revenue, and global market share of Conductive Silicon Carbide Wafer from 2020 to 2025.
Chapter 3, the Conductive Silicon Carbide Wafer competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Conductive Silicon Carbide Wafer breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Conductive Silicon Carbide Wafer market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Conductive Silicon Carbide Wafer.
Chapter 14 and 15, to describe Conductive Silicon Carbide Wafer sales channel, distributors, customers, research findings and conclusion.
Silicon carbide is an inorganic substance with the chemical formula SiC. It is made of raw materials such as quartz sand, petroleum coke (or coal coke), and sawdust (salt is needed to produce green silicon carbide) through high-temperature smelting in a resistance furnace. Silicon carbide is a semiconductor that exists in nature in the form of the extremely rare mineral moissanite. Since 1893, it has been mass-produced as powder and crystals for use as abrasives, etc. Among non-oxide high-tech refractory raw materials such as C, N, and B, silicon carbide is the most widely used and economical one, which can be called diamond sand or refractory sand.
Wafer refers to the cutting, grinding, and polishing of crystals along a specific crystal direction to obtain a clean single wafer with specific crystal planes and appropriate electrical, optical, and mechanical properties for growing epitaxial layers. Silicon carbide wafer is the core material of the newly developed wide bandgap semiconductor. The devices made with it have the characteristics of high temperature resistance, high voltage resistance, high frequency, high power, and radiation resistance. It has the advantages of fast switching speed and high efficiency, which can greatly reduce product power consumption, improve energy conversion efficiency, and reduce product volume.
Conductive silicon carbide substrates are single crystal slices formed by cutting, grinding, polishing, cleaning and other processes of conductive silicon carbide crystals. As an important raw material for the third-generation semiconductors, single crystal substrate slices can be made into silicon carbide-based power devices through homoepitaxial growth, wafer manufacturing, packaging and testing, and are important basic materials for the development of the third-generation semiconductor industry. Conductive silicon carbide wafers can be used to manufacture power devices such as SiC diodes and metal-oxide semiconductor field-effect transistors (MOSFETs) through homoepitaxial growth and device manufacturing processes. These devices are widely used in new energy vehicles, photovoltaic power generation, rail transportation, smart grids, aerospace and other fields.
According to the survey and statistics of our company's "Semiconductor Research Center", silicon carbide substrate manufacturers are currently mainly distributed in the United States, Europe, Japan and China, especially in the Chinese market. In recent years, investment in silicon carbide related projects has been very active. It is expected that in the next few years, Chinese manufacturers will play an important role in all links of the silicon carbide industry chain. Conductive substrates are widely used in power devices. Fields such as new energy vehicles, photovoltaics, high-speed rail, and industrial power supplies are its downstream markets. Power devices are very important basic components in the power electronics industry. Conductive silicon carbide substrates are mainly used to manufacture power devices. This type of power device is widely used in many aspects such as power conversion and circuit control of power equipment, and is related to all aspects of economy and life. Silicon carbide power devices can withstand high voltage, high temperature, and low loss. These excellent properties are in line with the requirements of power devices, so they have been rapidly promoted and applied in new energy vehicles, photovoltaic power generation and other fields in recent years.
This report is a detailed and comprehensive analysis for global Conductive Silicon Carbide Wafer market. Both quantitative and qualitative analyses are presented by manufacturers, by region & country, by Type and by Application. As the market is constantly changing, this report explores the competition, supply and demand trends, as well as key factors that contribute to its changing demands across many markets. Company profiles and product examples of selected competitors, along with market share estimates of some of the selected leaders for the year 2025, are provided.
Key Features:
Global Conductive Silicon Carbide Wafer market size and forecasts, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Conductive Silicon Carbide Wafer market size and forecasts by region and country, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Conductive Silicon Carbide Wafer market size and forecasts, by Type and by Application, in consumption value ($ Million), sales quantity (K Pcs), and average selling prices (US$/Pcs), 2020-2031
Global Conductive Silicon Carbide Wafer market shares of main players, shipments in revenue ($ Million), sales quantity (K Pcs), and ASP (US$/Pcs), 2020-2025
The Primary Objectives in This Report Are:
To determine the size of the total market opportunity of global and key countries
To assess the growth potential for Conductive Silicon Carbide Wafer
To forecast future growth in each product and end-use market
To assess competitive factors affecting the marketplace
This report profiles key players in the global Conductive Silicon Carbide Wafer market based on the following parameters - company overview, sales quantity, revenue, price, gross margin, product portfolio, geographical presence, and key developments. Key companies covered as a part of this study include Wolfspeed, SK Siltron, ROHM Group (SiCrystal), Coherent, Resonac, STMicroelectronics, TankeBlue, SICC, Hebei Synlight Crystal, CETC, etc.
This report also provides key insights about market drivers, restraints, opportunities, new product launches or approvals.
Market Segmentation
Conductive Silicon Carbide Wafer market is split by Type and by Application. For the period 2020-2031, the growth among segments provides accurate calculations and forecasts for consumption value by Type, and by Application in terms of volume and value. This analysis can help you expand your business by targeting qualified niche markets.
Market segment by Type
4 Inch SiC Wafer
6 Inch SiC Wafer
8 Inch SiC Wafer
Market segment by Application
New Energy Vehicles
Charging Piles
Photovoltaic and Wind Power
Others
Major players covered
Wolfspeed
SK Siltron
ROHM Group (SiCrystal)
Coherent
Resonac
STMicroelectronics
TankeBlue
SICC
Hebei Synlight Crystal
CETC
San'an Optoelectronics
Market segment by region, regional analysis covers
North America (United States, Canada, and Mexico)
Europe (Germany, France, United Kingdom, Russia, Italy, and Rest of Europe)
Asia-Pacific (China, Japan, Korea, India, Southeast Asia, and Australia)
South America (Brazil, Argentina, Colombia, and Rest of South America)
Middle East & Africa (Saudi Arabia, UAE, Egypt, South Africa, and Rest of Middle East & Africa)
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Conductive Silicon Carbide Wafer product scope, market overview, market estimation caveats and base year.
Chapter 2, to profile the top manufacturers of Conductive Silicon Carbide Wafer, with price, sales quantity, revenue, and global market share of Conductive Silicon Carbide Wafer from 2020 to 2025.
Chapter 3, the Conductive Silicon Carbide Wafer competitive situation, sales quantity, revenue, and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Conductive Silicon Carbide Wafer breakdown data are shown at the regional level, to show the sales quantity, consumption value, and growth by regions, from 2020 to 2031.
Chapter 5 and 6, to segment the sales by Type and by Application, with sales market share and growth rate by Type, by Application, from 2020 to 2031.
Chapter 7, 8, 9, 10 and 11, to break the sales data at the country level, with sales quantity, consumption value, and market share for key countries in the world, from 2020 to 2025.and Conductive Silicon Carbide Wafer market forecast, by regions, by Type, and by Application, with sales and revenue, from 2026 to 2031.
Chapter 12, market dynamics, drivers, restraints, trends, and Porters Five Forces analysis.
Chapter 13, the key raw materials and key suppliers, and industry chain of Conductive Silicon Carbide Wafer.
Chapter 14 and 15, to describe Conductive Silicon Carbide Wafer sales channel, distributors, customers, research findings and conclusion.
Table of Contents
109 Pages
- 1 Market Overview
- 2 Manufacturers Profiles
- 3 Competitive Environment: Conductive Silicon Carbide Wafer by Manufacturer
- 4 Consumption Analysis by Region
- 5 Market Segment by Type
- 6 Market Segment by Application
- 7 North America
- 8 Europe
- 9 Asia-Pacific
- 10 South America
- 11 Middle East & Africa
- 12 Market Dynamics
- 13 Raw Material and Industry Chain
- 14 Shipments by Distribution Channel
- 15 Research Findings and Conclusion
- 16 Appendix
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