Silicon Carbide (SiC) MOSFET Chips and Modules

Global Silicon Carbide (SiC) MOSFET Chips and Modules Market to Reach US$2.1 Billion by 2030

The global market for Silicon Carbide (SiC) MOSFET Chips and Modules estimated at US$698.6 Million in the year 2024, is expected to reach US$2.1 Billion by 2030, growing at a CAGR of 20.2% over the analysis period 2024-2030. SiC MOSFET Chip & Device, one of the segments analyzed in the report, is expected to record a 18.1% CAGR and reach US$1.2 Billion by the end of the analysis period. Growth in the SiC MOSFET Module segment is estimated at 23.4% CAGR over the analysis period.

The U.S. Market is Estimated at US$183.6 Million While China is Forecast to Grow at 19.2% CAGR

The Silicon Carbide (SiC) MOSFET Chips and Modules market in the U.S. is estimated at US$183.6 Million in the year 2024. China, the world`s second largest economy, is forecast to reach a projected market size of US$324.8 Million by the year 2030 trailing a CAGR of 19.2% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 18.1% and 17.6% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 14.0% CAGR.

Global Silicon Carbide (SiC) MOSFET Chips and Modules Market – Key Trends & Drivers Summarized

Why Are SiC MOSFET Chips and Modules Emerging as the Next Frontier in Power Electronics?

Silicon carbide (SiC) MOSFET chips and modules are rapidly becoming the cornerstone of next-generation power electronics due to their ability to operate at higher voltages, temperatures, and frequencies than traditional silicon-based components. These devices are revolutionizing how energy is managed and converted across industries, offering significant efficiency gains and size reductions in applications that demand robust and reliable power solutions. Unlike conventional silicon MOSFETs, SiC MOSFETs exhibit superior characteristics such as lower on-resistance, faster switching speeds, and higher breakdown voltage, making them ideal for high-power, high-temperature environments. Their application spans across electric vehicles, renewable energy systems, industrial motor drives, aerospace, and power grids, where they help reduce energy loss, enhance performance, and extend system life. In electric mobility, SiC MOSFETs are instrumental in improving battery usage, increasing driving range, and supporting compact inverter designs. In solar and wind energy installations, these modules contribute to better power conversion efficiency and lower thermal losses. With the growing global focus on energy conservation and decarbonization, the demand for SiC-based solutions is rising sharply. Their unique material properties and ability to outperform legacy technologies are positioning SiC MOSFET chips and modules as essential components in the shift toward smarter, more efficient, and more sustainable energy systems.

How Are Technological Innovations Enhancing the Performance and Scalability of SiC MOSFETs?

Ongoing innovations in material processing, device architecture, and packaging technologies are playing a crucial role in improving the performance, reliability, and manufacturability of silicon carbide MOSFETs. Manufacturers are leveraging advanced crystal growth techniques to produce higher-purity SiC wafers, which reduce defects and improve device yields. New trench and planar gate structures are being implemented to further lower on-resistance and gate charge, enabling faster switching and reduced conduction losses. These enhancements not only increase energy efficiency but also reduce the need for bulky cooling systems and passive components, resulting in more compact and lightweight designs. In the area of packaging, innovations such as double-sided cooling, sintered joints, and low-inductance layouts are extending the thermal and mechanical performance of SiC modules. This is especially important for high-current applications like EV traction inverters or utility-scale energy storage. Integrated gate drivers and fault protection mechanisms are being added to ensure stable operation under harsh conditions and to simplify system design. Moreover, improvements in wafer size from 4-inch to 6-inch and potentially 8-inch are helping drive down production costs, making SiC solutions more accessible to mass-market applications. These technological strides are enabling SiC MOSFETs to deliver greater performance while meeting the growing demand for cost-effective, energy-efficient semiconductor devices.

Which End-Use Industries Are Driving the Global Adoption of SiC MOSFET Chips and Modules?

The adoption of SiC MOSFET chips and modules is being propelled by a broad spectrum of industries that demand high-efficiency power conversion and compact system design. The electric vehicle sector stands out as the most significant driver, with automakers and component suppliers integrating SiC-based devices into traction inverters, onboard chargers, and DC-DC converters to increase efficiency and extend battery range. Renewable energy is another key area, particularly in photovoltaic inverters and wind turbine systems, where SiC MOSFETs improve energy harvesting and reduce thermal stress on components. The industrial automation sector is increasingly adopting SiC modules for high-performance motor drives and robotics, where faster switching and better thermal management enhance responsiveness and uptime. Rail and aerospace applications benefit from the lightweight and high-temperature capabilities of SiC devices, especially in power distribution and propulsion systems. Data centers and telecommunications infrastructure are turning to SiC power modules for power supply units and battery backup systems that require high-density, efficient, and reliable performance. Additionally, grid modernization efforts and smart energy systems are using SiC technology to support bidirectional energy flow and efficient power conditioning. As more industries transition to electrified and digitalized systems, SiC MOSFETs are becoming a foundational technology that supports innovation across a range of high-growth sectors.

What Market Dynamics and Global Trends Are Accelerating SiC MOSFET Industry Growth?

The global silicon carbide MOSFET market is experiencing accelerated growth due to a convergence of policy shifts, technological progress, and industry transformation. Increasing regulations aimed at reducing carbon emissions are pushing industries toward electrification, making high-efficiency power semiconductors like SiC MOSFETs a strategic priority. Government incentives for electric vehicles, clean energy adoption, and smart grid development are driving investment into power electronics infrastructure, further supporting demand. Supply chain expansion and vertical integration by major semiconductor manufacturers are improving capacity and reducing cost barriers, enabling greater scalability. Strategic partnerships between automotive OEMs, semiconductor companies, and research institutions are facilitating co-development of application-specific SiC solutions, ensuring alignment with performance and regulatory requirements. The rising cost of energy and the global push for energy independence are creating urgency for technologies that can deliver greater energy savings without compromising performance. In parallel, the shift to wide bandgap semiconductors is gaining industry-wide momentum, with SiC gaining a technological edge over gallium nitride (GaN) in high-voltage, high-power applications. As economies emerge from post-pandemic slowdowns, infrastructure investments in transportation, energy, and industrial automation are providing a strong foundation for SiC market growth. These converging trends are establishing SiC MOSFET chips and modules not only as a premium solution but increasingly as a mainstream standard for future-proof power electronics.

SCOPE OF STUDY:

The report analyzes the Silicon Carbide (SiC) MOSFET Chips and Modules market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:
Type (SiC MOSFET Chip & Device, SiC MOSFET Module); Application (Car Application, Industrial Application, Photovoltaic Application, Other Applications)

Geographic Regions/Countries:
World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.

Select Competitors (Total 42 Featured) -

• Aehr Test Systems
• Alpha & Omega Semiconductor
• Coherent Corp. (formerly II-VI Inc.)
• Fuji Electric Co., Ltd.
• GeneSiC Semiconductor Inc.
• Hitachi Power Semiconductor Device Ltd.
• Infineon Technologies AG
• IXYS Corporation
• Littelfuse, Inc.
• Microchip Technology Inc.
• Mitsubishi Electric Corporation
• Navitas Semiconductor
• ON Semiconductor
• Renesas Electronics Corporation
• ROHM Semiconductor
• Semikron Danfoss
• STMicroelectronics
• Toshiba Electronic Devices & Storage Corporation
• Vishay Intertechnology, Inc.
• Wolfspeed, Inc.

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