Material for Next-Generation Lithography

Global Material for Next-Generation Lithography Market to Reach US$293.3 Million by 2030

The global market for Material for Next-Generation Lithography estimated at US$103.4 Million in the year 2024, is expected to reach US$293.3 Million by 2030, growing at a CAGR of 19.0% over the analysis period 2024-2030. Photoresist Material, one of the segments analyzed in the report, is expected to record a 17.2% CAGR and reach US$177.8 Million by the end of the analysis period. Growth in the Ancillary Material segment is estimated at 22.0% CAGR over the analysis period.

The U.S. Market is Estimated at US$28.2 Million While China is Forecast to Grow at 24.6% CAGR

The Material for Next-Generation Lithography market in the U.S. is estimated at US$28.2 Million in the year 2024. China, the world`s second largest economy, is forecast to reach a projected market size of US$65.1 Million by the year 2030 trailing a CAGR of 24.6% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 14.3% and 17.0% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 15.1% CAGR.

Global Material for Next-Generation Lithography Market – Key Trends & Drivers Summarized

Why Are Specialized Materials Crucial to the Future of Semiconductor Lithography?

Materials for next-generation lithography (NGL) are critical enablers of sub-7nm semiconductor manufacturing technologies, particularly in processes such as extreme ultraviolet (EUV) lithography and directed self-assembly (DSA). As conventional photolithography approaches their physical and optical limits, these advanced materials—comprising resists, underlayers, anti-reflective coatings, and pellicles—ensure precise pattern transfer, line edge roughness control, and high sensitivity at nanoscale dimensions. With demand for more powerful, compact, and energy-efficient chips continuing to rise, next-generation materials are shaping the future of high-performance computing, 5G, AI processors, and advanced memory devices.

Unlike earlier nodes that relied heavily on chemically amplified resists for deep ultraviolet (DUV) lithography, NGL processes require materials that can withstand EUV’s short 13.5 nm wavelength and high-energy photon bombardment. This demands not only enhanced photoresist chemistries but also improved substrate interfaces, underlayer uniformity, and contamination-free pellicle membranes. These advanced materials ensure pattern fidelity and process reliability, especially as fabs move into high-volume EUV production for logic and DRAM devices.

How Are Material Science Innovations Advancing Lithographic Precision and Efficiency?

Material suppliers are investing heavily in developing novel resist formulations with higher quantum efficiency, low line width roughness (LWR), and excellent etch resistance under EUV exposure. Metal-oxide resists, hybrid organic-inorganic compounds, and low-volume polymer blends are being evaluated to overcome the stochastic effects and resolution challenges introduced at such small feature sizes. These new materials allow for finer pitch scaling and reduce pattern collapse during post-exposure bake and development.

Beyond resists, anti-reflective coatings (BARCs) and planarization layers are being optimized for compatibility with EUV optics and pattern transfer requirements. Materials that prevent pattern distortion due to photon scattering and outgassing are essential for mask integrity and yield performance. Pellicles made from ultra-thin, EUV-transparent membranes—such as carbon-based films or silicon nitride composites—are being developed to protect photomasks from particle contamination during exposure. These innovations collectively support higher throughput, lower defect rates, and improved cost-efficiency in EUV lithography.

Which Segments and Applications Are Driving the Need for NGL-Compatible Materials?

The primary demand for next-generation lithography materials originates from advanced semiconductor fabrication, particularly for logic ICs at 5nm, 3nm, and below. Leading foundries and integrated device manufacturers (IDMs) are adopting EUV to produce complex, high-density system-on-chip (SoC) and high-bandwidth memory (HBM) components. Key applications include mobile processors, graphics chips, and AI accelerators, where performance per watt is a competitive differentiator.

The DRAM industry is also transitioning toward EUV-based lithography for improved cell scaling and bit density. As back-end packaging techniques like 2.5D and 3D integration become mainstream, material compatibility with heterogeneous chiplets and high aspect-ratio structures becomes essential. Advanced packaging, FOWLP (fan-out wafer-level packaging), and high-density interconnects rely on precision materials that maintain lithographic accuracy across varying topographies. In all these areas, material performance is tightly coupled to overall yield and device functionality.

The Growth in the Material for Next-Generation Lithography Market Is Driven by Several Factors…

The growth in the material for next-generation lithography market is driven by several factors including the rapid miniaturization of semiconductor nodes, accelerated EUV adoption, and increased demand for high-precision patterning in advanced packaging. A key growth driver is the global investment in cutting-edge semiconductor fabs, particularly in Asia, the U.S., and Europe, aimed at securing supply chain resilience and advancing chip design leadership.

The need for ultra-sensitive, low-defect resists, advanced pellicles, and EUV-compatible ancillaries is being amplified by rising design complexity in logic and memory chips. Collaborative innovation between fabs, equipment makers, and material suppliers is fostering the development of node-specific chemistries and tailored formulations. Furthermore, regulatory emphasis on sustainability and yield optimization is encouraging the adoption of materials with lower volatility, better recyclability, and minimal outgassing—solidifying their role in next-generation semiconductor manufacturing ecosystems.

SCOPE OF STUDY:

The report analyzes the Material for Next-Generation Lithography market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:
Material (Photoresist Material, Ancillary Material); Application (Automotive, Consumer Electronics, IT & Telecommunications, Other Applications)

Geographic Regions/Countries:
World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

Select Competitors (Total 43 Featured) -

• Allresist GmbH
• Avantor Performance Materials Inc.
• Brewer Science, Inc.
• Carl Zeiss SMT GmbH
• DJ MicroLaminates, Inc.
• Dongjin Semichem Co., Ltd.
• DuPont de Nemours, Inc.
• Fujifilm Corporation
• Irresistible Materials Ltd
• JSR Corporation
• Kayaku Advanced Materials, Inc.
• KemLab Inc.
• Merck KGaA
• micro resist technology GmbH
• SACHEM, Inc.
• Shin-Etsu Chemical Co., Ltd.
• Sumitomo Chemical Co., Ltd.
• Tokyo Ohka Kogyo Co., Ltd. (TOK)
• Weifang Startech Microelectronic Materials Co., Ltd.
• Zeon Corporation

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