High-k and ALD/CVD Metal Precursors

Global High-k and ALD/CVD Metal Precursors Market to Reach US$841.8 Million by 2030

The global market for High-k and ALD/CVD Metal Precursors estimated at US$588.0 Million in the year 2024, is expected to reach US$841.8 Million by 2030, growing at a CAGR of 6.2% over the analysis period 2024-2030. Interconnect, one of the segments analyzed in the report, is expected to record a 5.7% CAGR and reach US$424.0 Million by the end of the analysis period. Growth in the Capacitor segment is estimated at 6.2% CAGR over the analysis period.

Global High-k and ALD/CVD Metal Precursors Market - Key Trends & Drivers Summarized

High-κ metal precursors refer to chemical compounds utilized for the deposition of materials with a high dielectric constant (κ) onto substrates through thin-film deposition technologies like Atomic Layer Deposition (ALD) and Chemical Vapor Deposition (CVD).  High-κ represents a material with higher dielectric constant. ‘k’ in high-κ refers to kappa. High-κ Materials possess high dielectric constant in comparison to silicon dioxide, and hence are poised to replace the latter particularly in microelectronic components. A material`s dielectric constant is indicative of its capacity to store electrical charges, with high-κ substances being superior in this capacity compared to conventional silicon dioxide. This characteristic is especially beneficial in semiconductor technology, enabling the miniaturization of semiconductor devices such as transistors and capacitors by reducing gate leakage and allowing for smaller device footprints without sacrificing performance. Predominant examples of high-κ materials include hafnium oxide (HfO2), zirconium oxide (ZrO2), and aluminum oxide (Al2O3), which are extensively used in the semiconductor industry, particularly as gate dielectrics in transistors.

ALD and CVD processes rely on metal precursors, which are chemical compounds that decompose to form the desired thin films. In ALD, precursors are introduced in a sequential manner, ensuring a self-limiting reaction that creates a monolayer of material per cycle. This results in exceptional control over film thickness and composition, which is crucial for applications in modern semiconductor manufacturing. CVD, on the other hand, involves the continuous flow of precursors and reactant gases, allowing for the deposition of high-purity and dense films. Precursors for these processes must exhibit properties such as high volatility, thermal stability, and the ability to decompose cleanly without leaving contaminants. Common metal precursors include metal halides, alkyls, and amides.

The global market for high-κ an ALD/CVD metal precursors is poised for high growth in the coming years, led by growing trend towards miniaturization and rising demand for highly efficient electronic and semiconductor devices. Lack of deposition uniformity in phase change materials deposition when traditional methods like physical vapor deposition are used is driving market growth. ALD/CVD thin film deposition techniques also enabled several major developments in electronic semiconductor devices, LEDs, magnetic recording media, optical coatings and many other areas. As the semiconductor industry pushes towards sub-7nm technology nodes, the need for precise and reliable deposition techniques becomes critical. Additionally, the rise of new applications in areas such as artificial intelligence, 5G technology, and the Internet of Things (IoT) is fueling the demand for advanced semiconductor devices, thereby boosting the market for high-k dielectrics and metal precursors. Further improvements in nanotechnology and advancements in insulators, high dielectric constants and LED technology are also expected to boost market growth. Growing focus on R&D initiatives and the rising adoption of nanotechnology in electronics and semiconductors industry is expected to bolster market growth. Furthermore, continuous advancements in precursor chemistry and deposition technologies are enhancing the performance and applicability of these materials, making them indispensable in the semiconductor fabrication process. These factors collectively ensure robust growth in the high-k and ALD/CVD metal precursors market, meeting the evolving needs of the semiconductor industry.

SCOPE OF STUDY:

The report analyzes the High-k and ALD/CVD Metal Precursors market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:
Technology (Interconnect, Capacitor, Gates)

Geographic Regions/Countries:
World; USA; Japan; China; Europe; France; Germany; Italy; UK; Rest of Europe; Asia-Pacific; South Korea; Taiwan; Rest of Asia-Pacific; Rest of World.

Select Competitors (Total 34 Featured) -

• ADEKA Corporation
• Air Liquide Electronics Systems
• Colnatec LLC
• DuPont de Nemours, Inc.
• Entegris, Inc.
• Linde plc
• Merck KGaA
• Strem Catalog
• Tri Chemical Laboratories Inc.
• UP Chemical Co., Ltd.

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