Gate-All-Around FET (GAAFET)

Global Gate-All-Around FET (GAAFET) Market to Reach US$248.6 Million by 2030

The global market for Gate-All-Around FET (GAAFET) estimated at US$65.4 Million in the year 2024, is expected to reach US$248.6 Million by 2030, growing at a CAGR of 24.9% over the analysis period 2024-2030. 2nm Size, one of the segments analyzed in the report, is expected to record a 22.1% CAGR and reach US$133.1 Million by the end of the analysis period. Growth in the 3nm Size segment is estimated at 28.8% CAGR over the analysis period.

The U.S. Market is Estimated at US$17.8 Million While China is Forecast to Grow at 32.5% CAGR

The Gate-All-Around FET (GAAFET) market in the U.S. is estimated at US$17.8 Million in the year 2024. China, the world`s second largest economy, is forecast to reach a projected market size of US$59.6 Million by the year 2030 trailing a CAGR of 32.5% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 20.3% and 22.2% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 20.9% CAGR.

Global Gate-All-Around FET (GAAFET) Market - Key Trends & Drivers Summarized

Why Is Gate-All-Around FET Architecture Reshaping Advanced Semiconductor Nodes?

Gate-All-Around Field Effect Transistors (GAAFETs) are emerging as the next major advancement in transistor architecture for nanoscale semiconductor processes. Unlike FinFETs, which control current from three sides of the channel, GAAFETs surround the channel with gate material on all sides, providing enhanced electrostatic control. This configuration improves performance, reduces leakage, and supports further device scaling below 3 nanometers.

As traditional planar and FinFET structures approach physical and electrical limits, GAAFETs offer improved short-channel behavior and better threshold voltage control. Foundries are transitioning to GAAFETs to continue Moore’s Law scaling and deliver high-performance, low-power chips for mobile processors, AI accelerators, and high-speed networking. The architecture allows more compact layouts while supporting variations in gate width, offering enhanced design flexibility for power-performance optimization.

How Are Fabrication Processes and Materials Evolving to Enable GAAFET Adoption?

GAAFET implementation requires significant changes in materials and process flow. Key fabrication steps include epitaxial growth of stacked nanosheets or nanowires, precision etching, and conformal gate deposition. Gate length uniformity, nanosheet spacing, and inner spacer formation are critical for maintaining electrical characteristics and yield. High-k metal gate stacks, advanced lithography, and atomic layer deposition are used to maintain dimensional accuracy.

Device manufacturers are also leveraging strain engineering and dielectric engineering to enhance carrier mobility and reduce variability. Multi-Vt GAAFET libraries are being developed to offer broader design coverage across power envelopes. EDA toolchains are adapting to GAAFET topologies, with updated modeling and verification flows to support parasitic extraction and electrothermal simulation. These process and design adaptations are necessary for smooth integration into 2 nm and sub-2 nm logic nodes.

Where Are GAAFETs Expected to Be Deployed First and Which End-Uses Are Targeted?

Initial GAAFET adoption is focused on mobile SoCs, data center CPUs, and AI chips where power efficiency and density are critical. Leading semiconductor foundries and IDMs are planning commercial deployment of GAAFET-based nodes starting with 2 nm-class production. High-performance computing applications benefit from GAAFET’s low leakage and reduced variability, especially in multi-core architectures and advanced packaging environments.

Beyond logic chips, there is ongoing research into GAAFET application in memory, RF, and sensor integration. Their superior electrostatics support tighter device packing, enabling improved energy efficiency in edge computing, AR/VR processors, and autonomous systems. Adoption will accelerate as design flows, IP ecosystems, and foundry support mature. Integration into heterogeneous 3D ICs and chiplets is expected to follow as thermal and interconnect challenges are addressed.

What Is Driving Growth in the Gate-All-Around FET Market?

Growth in the GAAFET market is driven by several factors related to transistor scaling, power efficiency requirements, and advanced node readiness. Demand for sub-3 nm semiconductors in mobile, AI, and high-performance computing is pushing adoption of gate-all-around architecture. Advances in nanosheet fabrication, spacer engineering, and gate material deposition are enabling commercial viability. Growth is also supported by foundry transitions to GAAFET platforms, increasing need for performance-density tradeoffs, and continued development of design enablement tools and process integration strategies. As FinFET limitations intensify, GAAFET becomes essential for sustaining performance and energy scaling in next-generation semiconductor devices.

SCOPE OF STUDY:

The report analyzes the Gate-All-Around FET (GAAFET) market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:
Size (2nm Size, 3nm Size); Application (Inverters & UPS Application, Consumer Electronics Application, Industrial Systems Application)

Geographic Regions/Countries:
World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

Select Competitors (Total 39 Featured) -

• Applied Materials
• ASML Holding
• Cadence Design Systems
• GlobalFoundries
• IBM
• Imec
• Infineon Technologies
• Intel Corporation
• Lam Research Corporation
• MediaTek Inc.
• Micron Technology
• NXP Semiconductors
• Qualcomm Incorporated
• Samsung Electronics
• Semiconductor Manufacturing International Corporation (SMIC)
• Synopsis, Inc.
• Taiwan Semiconductor Manufacturing Company (TSMC)
• Texas Instruments
• Tokyo Electron Limited
• Western Digital

AI INTEGRATIONS
We`re transforming market and competitive intelligence with validated expert content and AI tools.

Instead of following the general norm of querying LLMs and Industry-specific SLMs, we built repositories of content curated from domain experts worldwide including video transcripts, blogs, search engines research, and massive amounts of enterprise, product/service, and market data.

TARIFF IMPACT FACTOR
Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by increasing the Cost of Goods Sold (COGS), reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.

Please note: Reports are sold as single-site single-user licenses. Electronic versions require 24-48 hours as each copy is customized to the client with digital controls and custom watermarks. The Publisher uses digital controls protecting against copying and printing is restricted to one full copy to be used at the same location.

The latest version of Adobe Acrobat Reader is required to view the report. Upon ordering an electronic version, the Publisher will provide a link to download the purchased report.

Prior to fulfillment of an order, the client will be required to sign a document detailing the purchase terms for a publication from this publisher. Show more