GaN & SiC Power Semiconductor

Global GaN & SiC Power Semiconductor Market to Reach US$4.8 Billion by 2030

The global market for GaN & SiC Power Semiconductor estimated at US$1.5 Billion in the year 2024, is expected to reach US$4.8 Billion by 2030, growing at a CAGR of 21.2% over the analysis period 2024-2030. SIC Power Modules, one of the segments analyzed in the report, is expected to record a 19.0% CAGR and reach US$2.2 Billion by the end of the analysis period. Growth in the GaN Power Modules segment is estimated at 24.8% CAGR over the analysis period.

The U.S. Market is Estimated at US$413.0 Million While China is Forecast to Grow at 28.1% CAGR

The GaN & SiC Power Semiconductor market in the U.S. is estimated at US$413.0 Million in the year 2024. China, the world`s second largest economy, is forecast to reach a projected market size of US$1.1 Billion by the year 2030 trailing a CAGR of 28.1% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 17.3% and 18.9% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 17.8% CAGR.

Global GaN & SiC Power Semiconductor Market – Key Trends & Drivers Summarized

Why Are GaN & SiC Power Semiconductors Transforming Power Electronics?

Gallium Nitride (GaN) and Silicon Carbide (SiC) power semiconductors have emerged as game-changing technologies in power electronics, offering superior efficiency, higher operating frequencies, and greater thermal stability compared to traditional silicon-based power devices. These wide-bandgap (WBG) semiconductors are enabling advancements in high-power applications, including electric vehicles (EVs), renewable energy systems, data centers, and high-frequency telecommunications. As industries push for more compact, energy-efficient, and high-performance power solutions, GaN and SiC semiconductors have become essential components in next-generation power management systems.

One of the primary advantages of GaN and SiC semiconductors is their ability to operate at higher voltages and temperatures with significantly lower energy losses. This makes them particularly valuable in applications requiring high power density, such as fast-charging EV infrastructure, solar inverters, and industrial motor drives. Additionally, the ability of these materials to switch at higher frequencies enables the miniaturization of power conversion systems, reducing the size and weight of power modules while increasing efficiency. As governments and corporations prioritize sustainability and energy conservation, the demand for GaN and SiC power semiconductors is expected to grow, driving innovations in electrification and power management.

How Are GaN & SiC Advancing Power Semiconductor Technology?

Technological advancements in material science, fabrication techniques, and power module design have significantly improved the performance and scalability of GaN and SiC power semiconductors. Innovations in epitaxial growth, particularly in SiC wafer production, have enhanced the quality and yield of SiC substrates, making them more commercially viable for high-power applications. Similarly, improvements in GaN-on-Silicon (GaN-on-Si) and GaN-on-GaN fabrication methods have led to increased device efficiency and cost reductions, making GaN power semiconductors more accessible to mass-market applications.

The integration of GaN and SiC into high-power switching devices, such as MOSFETs, Schottky diodes, and power modules, has further improved system performance in high-voltage applications. Additionally, advancements in packaging technologies, including chip-scale packaging (CSP) and advanced thermal management solutions, have enhanced the reliability and durability of GaN and SiC power components. The development of AI-driven power management algorithms is also optimizing the efficiency of GaN and SiC-based power systems, enabling real-time power optimization and predictive maintenance. As research continues to refine these semiconductor technologies, their adoption in next-generation power applications is expected to accelerate.

Which Industries and Market Segments Are Driving Demand for GaN & SiC Power Semiconductors?

The electric vehicle (EV) industry is one of the largest adopters of GaN and SiC power semiconductors, leveraging their high efficiency and fast-switching capabilities for EV inverters, onboard chargers, and DC-DC converters. Compared to conventional silicon-based power devices, SiC inverters significantly improve EV battery efficiency, leading to extended range and reduced charging times. Similarly, GaN power transistors are being used in compact, lightweight fast-charging solutions for EVs, supporting the global transition toward sustainable transportation.

The renewable energy sector is another major driver of GaN and SiC power semiconductor adoption, particularly in solar inverters and wind power conversion systems. These semiconductors enable higher energy conversion efficiencies, reducing power losses in photovoltaic (PV) installations and wind turbines. Additionally, data centers and telecommunications infrastructure are increasingly integrating GaN and SiC devices to improve power efficiency and reduce energy consumption in high-frequency power supply systems. With the expansion of 5G networks and AI-driven computing applications, the demand for high-efficiency power solutions is expected to rise, further boosting market growth for GaN and SiC semiconductors.

What Key Factors Are Driving Market Growth?

The growth in the GaN & SiC power semiconductor market is driven by several factors, including increasing demand for high-efficiency power electronics, advancements in semiconductor fabrication, and the expansion of electric vehicles and renewable energy installations. The shift toward electrification in transportation and industrial sectors has accelerated the need for high-performance power devices that reduce energy losses and improve system reliability. Additionally, regulatory mandates promoting energy efficiency and carbon footprint reduction have further propelled the adoption of GaN and SiC power solutions.

The expansion of semiconductor manufacturing capacity and the development of cost-effective production techniques, such as GaN-on-Si technology, have also contributed to market growth by making these semiconductors more affordable. Furthermore, the increasing adoption of AI-driven power management and smart grid technologies has enhanced the efficiency of GaN and SiC-based systems, optimizing energy distribution in industrial and residential applications. As industries continue to transition toward energy-efficient power solutions, GaN and SiC semiconductors are expected to play a crucial role in shaping the future of high-performance power electronics.

SCOPE OF STUDY:

The report analyzes the GaN & SiC Power Semiconductor market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:
Product (SIC Power Modules, GaN Power Modules, Discrete SIC, Discrete GaN); Application (Power Supplies Application, Industrial Motor Drives Application, Hybrid / Electric Vehicles Application, Photovoltaic Inverters Application, Traction Application, Other Applications)

Geographic Regions/Countries:
World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

Select Competitors (Total 44 Featured) -

• Alpha and Omega Semiconductor Limited
• Ampleon
• Fuji Electric Co., Ltd.
• GaN Systems Inc.
• GeneSiC Semiconductor Inc.
• Infineon Technologies AG
• Littelfuse, Inc.
• Mitsubishi Electric Corporation
• Navitas Semiconductor
• Nexperia
• NXP Semiconductors N.V.
• ON Semiconductor Corporation
• Qorvo, Inc.
• ROHM Semiconductor
• STMicroelectronics N.V.
• Texas Instruments Incorporated
• Transphorm Inc.
• United Silicon Carbide Inc.
• VisIC Technologies Ltd.
• Wolfspeed, Inc.

TARIFF IMPACT FACTOR

Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by artificially increasing the COGS, reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.

We are diligently following expert opinions of leading Chief Economists (14,949), Think Tanks (62), Trade & Industry bodies (171) worldwide, as they assess impact and address new market realities for their ecosystems. Experts and economists from every major country are tracked for their opinions on tariffs and how they will impact their countries.

We expect this chaos to play out over the next 2-3 months and a new world order is established with more clarity. We are tracking these developments on a real time basis.

As we release this report, U.S. Trade Representatives are pushing their counterparts in 183 countries for an early closure to bilateral tariff negotiations. Most of the major trading partners also have initiated trade agreements with other key trading nations, outside of those in the works with the United States. We are tracking such secondary fallouts as supply chains shift.

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APRIL 2025: NEGOTIATION PHASE

Our April release addresses the impact of tariffs on the overall global market and presents market adjustments by geography. Our trajectories are based on historic data and evolving market impacting factors.

JULY 2025 FINAL TARIFF RESET

Complimentary Update: Our clients will also receive a complimentary update in July after a final reset is announced between nations. The final updated version incorporates clearly defined Tariff Impact Analyses.

Reciprocal and Bilateral Trade & Tariff Impact Analyses:

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INDIA
176 OTHER COUNTRIES.

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