GaN Industrial Devices

Global GaN Industrial Devices Market to Reach US$3.4 Billion by 2030

The global market for GaN Industrial Devices estimated at US$1.8 Billion in the year 2024, is expected to reach US$3.4 Billion by 2030, growing at a CAGR of 11.4% over the analysis period 2024-2030. Optoelectronics GaN Devices, one of the segments analyzed in the report, is expected to record a 9.5% CAGR and reach US$1.7 Billion by the end of the analysis period. Growth in the Power GaN Devices segment is estimated at 14.1% CAGR over the analysis period.

The U.S. Market is Estimated at US$478.4 Million While China is Forecast to Grow at 15.1% CAGR

The GaN Industrial Devices market in the U.S. is estimated at US$478.4 Million in the year 2024. China, the world`s second largest economy, is forecast to reach a projected market size of US$686.3 Million by the year 2030 trailing a CAGR of 15.1% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 8.5% and 10.0% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 9.0% CAGR.

Global GaN Industrial Devices Market - Key Trends & Drivers Summarized

Why Are GaN Devices Transforming Industrial Power Systems?

Gallium nitride (GaN) devices are gaining momentum across industrial applications due to their superior switching speed, thermal efficiency, and compact design compared to traditional silicon-based power electronics. GaN transistors and diodes are widely used in industrial converters, motor drives, power inverters, and wireless power transfer systems. Their ability to operate at higher voltages and frequencies with lower power loss makes them ideal for energy-intensive and space-constrained environments.

Industrial systems increasingly demand higher efficiency and power density, especially in segments such as robotics, factory automation, heavy machinery, and industrial lighting. GaN-based components are being adopted to support high-speed switching, reduce passive component size, and enable simplified thermal management. As electrification advances across industrial sectors, GaN devices are becoming critical to achieving reduced footprint, improved energy savings, and increased system reliability.

What Technological Innovations Are Advancing Device Capabilities?

GaN-on-silicon substrates are the dominant platform, offering a cost-effective path to scale GaN technology using established silicon manufacturing processes. Enhancements in epitaxial growth and packaging technologies are improving device consistency, thermal conductivity, and integration with standard control circuits. Surface passivation and robust gate protection structures are also being refined to meet industrial durability standards.

Design integration is another focus area. GaN devices are increasingly available in half-bridge or full-bridge configurations with embedded gate drivers and protection circuitry. These integrated power modules simplify board design and reduce electromagnetic interference. Compact surface-mount packaging formats such as PQFN are enabling higher power density in confined industrial enclosures. GaN components are also being tailored for harsh operating conditions, including temperature and vibration resilience in automotive and energy systems.

How Are Industrial Use Cases and Power System Designs Evolving?

GaN devices are being deployed across a broad spectrum of industrial applications, including motor control units, power factor correction (PFC) circuits, and DC-DC converters for automation and robotics systems. High-frequency operation allows for reduced magnetics and compact cooling systems, which is especially beneficial in mobile or modular industrial equipment. In renewable energy, GaN inverters are enabling more compact and efficient solar power optimizers and energy storage interfaces.

Electric vehicle (EV) charging infrastructure also benefits from GaN’s fast switching and compact size. Charging stations, onboard chargers, and bidirectional converters are being redesigned to meet efficiency targets using GaN switches. Industrial uninterruptible power supply (UPS) systems and telecommunications power modules are adopting GaN to achieve higher load response rates and better thermal performance. These applications require scalable, high-efficiency power conversion that GaN materials are well-suited to deliver.

Growth in the GaN Industrial Devices Market Is Driven by Several Factors…

Growth in the GaN industrial devices market is driven by several factors including demand for higher energy efficiency, miniaturization of industrial power systems, and adoption of high-frequency switching architectures. Increasing electrification in industrial automation, robotics, and energy management systems supports integration of GaN-based power devices. Improvements in GaN-on-silicon production, packaging, and integrated module design reduce costs and facilitate adoption. Expanding use in EV charging, solar inverters, and factory power supply units further boosts demand. As industrial design requirements evolve toward greater power density, thermal control, and digital integration, GaN devices offer performance advantages that continue to drive market growth across multiple application domains.

SCOPE OF STUDY:

The report analyzes the GaN Industrial Devices market in terms of units by the following Segments, and Geographic Regions/Countries:

Segments:
Type (Optoelectronics GaN Devices, Power GaN Devices, RF GaN Devices); Application (RF Power Amplifier Application, Microwave & Millimeter Wave Circuits Application, Radar Sensing Equipment Application, Tactical Radios Application, Communications Satellite Equipment Application, Other Applications); End-Use, Aerospace & Defense End-Use, Automotive End-Use, IT & Telecommunications End-Use, Other End-Uses)

Geographic Regions/Countries:
World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; Spain; Russia; and Rest of Europe); Asia-Pacific (Australia; India; South Korea; and Rest of Asia-Pacific); Latin America (Argentina; Brazil; Mexico; and Rest of Latin America); Middle East (Iran; Israel; Saudi Arabia; United Arab Emirates; and Rest of Middle East); and Africa.

Select Competitors (Total 36 Featured) -

• Aixtron SE
• Analog Devices, Inc.
• Efficient Power Conversion (EPC)
• Enkris Semiconductor
• EPCOS (TDK Corporation)
• GaN Systems
• Infineon Technologies AG
• IQE plc
• MACOM Technology Solutions
• Mitsubishi Electric
• NXP Semiconductors
• Navitas Semiconductor
• Qorvo, Inc.
• ROHM Semiconductor
• STMicroelectronics
• Sumitomo Electric
• Transphorm, Inc.
• Texas Instruments
• Toyota Tsusho Corporation
• Wolfspeed, Inc.

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