Global SiC & GaN Power Devices Market Research Report, Competitive, Technology and Forecast Analysis 2025-2032

Market Overview

According to DIResearch＇s in-depth investigation and research, the global SiC & GaN Power Devices market size will reach 6,937.45 Million USD in 2025 and is projected to reach 25,384.88 Million USD by 2032, with a CAGR of 20.36% (2025-2032). Notably, the China SiC & GaN Power Devices market has changed rapidly in the past few years. By 2025, China＇s market size is expected to be  Million USD, representing approximately  % of the global market share.

Research Summary

SiC (silicon carbide) and GaN (gallium nitride) power devices are advanced semiconductor technologies used in power electronics applications for efficient energy conversion. SiC and GaN power devices offer several advantages over traditional silicon-based devices, including higher breakdown voltages, lower on-resistance, faster switching speeds, and better thermal conductivity. These properties enable SiC and GaN devices to operate at higher frequencies and temperatures while achieving greater energy efficiency and power density. SiC devices are particularly well-suited for high-power applications such as electric vehicles, renewable energy systems, and industrial motor drives, where their high voltage capability and low switching losses improve system performance and reliability. GaN devices, on the other hand, excel in high-frequency and low-voltage applications such as wireless power transfer, telecommunications, and consumer electronics, where their superior switching speed and efficiency enable compact and lightweight designs. Overall, SiC and GaN power devices represent significant advancements in power electronics technology, offering improved performance, size, and efficiency compared to conventional silicon devices.

The major global  manufacturers of SiC & GaN Power Devices include Infineon, Rohm, Mitsubishi, STMicro, Fuji, Toshiba, Microchip Technology, United Silicon Carbide, Efficient Power Conversion (EPC), GeneSic, GaN Systems, VisIC Technologies, etc. The global players competition landscape in this report is divided into three tiers. The first tier comprises global leading enterprises that command a substantial market share, hold a dominant industry position, possess strong competitiveness and influence, and generate significant revenue. The second tier includes companies with a notable market presence and reputation; these firms actively follow industry leaders in product, service, or technological innovation and maintain a moderate revenue scale. The third tier consists of smaller companies with limited market share and lower brand recognition, primarily focused on local markets and generating comparatively lower revenue.

This report studies the market size, price trends and future development prospects of SiC & GaN Power Devices. Focus on analysing the market share, product portfolio, prices, sales, revenue and gross profit margin of global major manufacturers, as well as the market status and trends of different product types and applications in the global SiC & GaN Power Devices market. The report data covers historical data from 2020 to 2024, based year in 2025 and forecast data from 2026 to 2032.

The regions and countries in the report include US, Germany, Japan, China, France, UK, South Korea, Canada, Italy, Russia, Mexico, Brazil, India, Vietnam, Thailand, South Africa and other regions, covering the SiC & GaN Power Devices market conditions and future development trends of key regions and countries, combined with industry-related policies and the latest technological developments, analyze the development characteristics of SiC & GaN Power Devices industries in various regions and countries, help companies understand the development characteristics of each region, help companies formulate business strategies, and achieve the ultimate goal of the company's global development strategy.    

The data sources of this report mainly include the National Bureau of Statistics, customs databases, industry associations, corporate financial reports, third-party databases, etc. Among them, macroeconomic data mainly comes from the National Bureau of Statistics, International Economic Research Organization; industry statistical data mainly come from industry associations; company data mainly comes from interviews, public information collection, third-party reliable databases, and price data mainly comes from various markets monitoring database.

Global Key Manufacturers of SiC & GaN Power Devices Include:

Infineon

Rohm

Mitsubishi

STMicro

Fuji

Toshiba

Microchip Technology

United Silicon Carbide

Efficient Power Conversion (EPC)

GeneSic

GaN Systems

VisIC Technologies

SiC & GaN Power Devices Product Segment Include:

GaN Power Devices

SiC Power Devices

SiC & GaN Power Devices Product Application Include:

Consumer Electronics

Automotive & Transportation

Industrial

Others

Chapter Scope

Chapter 1: Product Research Range, Product Types and Applications, Market Overview, Market Situation and Trend

Chapter 2: Global SiC & GaN Power Devices Industry PESTEL Analysis

Chapter 3: Global SiC & GaN Power Devices Industry Porter's Five Forces Analysis

Chapter 4: Global SiC & GaN Power Devices Major Regional Market Size (Sales, Revenue, Price) and Forecast Analysis

Chapter 5: Global SiC & GaN Power Devices Competitive Analysis of Key Manufacturers (Sales, Revenue, Market Share, Price, Regional Distribution and Industry Concentration)

Chapter 6: Global SiC & GaN Power Devices Sales, Revenue, Price and Forecast by Product Type

Chapter 7: Key Company Profiles (Product Portfolio, Sales, Revenue, Price and Gross Margin)

Chapter 8: Industrial Chain Analysis, SiC & GaN Power Devices Different Application Market Analysis (Sales and Revenue), Sales Channel Analysis

Chapter 9: Research Findings and Conclusion

Chapter 10: Methodology and Data Sources