Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Market Global Report 2026

Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Market Global Report 2026 from The Business Research Company provides strategists, marketers and senior management with the critical information they need to assess the market.

This report focuses silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) market which is experiencing strong growth. The report gives a guide to the trends which will be shaping the market over the next ten years and beyond.

Reasons to Purchase

• Gain a truly global perspective with the most comprehensive report available on this market covering 16 geographies.
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• Create regional and country strategies on the basis of local data and analysis.
• Identify growth segments for investment.
• Outperform competitors using forecast data and the drivers and trends shaping the market.
• Understand customers based on end user analysis.
• Benchmark performance against key competitors based on market share, innovation, and brand strength.
• Evaluate the total addressable market (TAM) and market attractiveness scoring to measure market potential.
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Description:

Where is the largest and fastest growing market for silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) ? How does the market relate to the overall economy, demography and other similar markets? What forces will shape the market going forward, including technological disruption, regulatory shifts, and changing consumer preferences? The silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) market global report from the Business Research Company answers all these questions and many more.

The report covers market characteristics, size and growth, segmentation, regional and country breakdowns, total addressable market (TAM), market attractiveness score (MAS), competitive landscape, market shares, company scoring matrix, trends and strategies for this market. It traces the market’s historic and forecast market growth by geography.

• The market characteristics section of the report defines and explains the market. This section also examines key products and services offered in the market, evaluates brand-level differentiation, compares product features, and highlights major innovation and product development trends.
• The supply chain analysis section provides an overview of the entire value chain, including key raw materials, resources, and supplier analysis. It also provides a list competitor at each level of the supply chain.
• The updated trends and strategies section analyses the shape of the market as it evolves and highlights emerging technology trends such as digital transformation, automation, sustainability initiatives, and AI-driven innovation. It suggests how companies can leverage these advancements to strengthen their market position and achieve competitive differentiation.
• The regulatory and investment landscape section provides an overview of the key regulatory frameworks, regularity bodies, associations, and government policies influencing the market. It also examines major investment flows, incentives, and funding trends shaping industry growth and innovation.
• The market size section gives the market size ($b) covering both the historic growth of the market, and forecasting its development.
• The forecasts are made after considering the major factors currently impacting the market. These include the technological advancements such as AI and automation, Russia-Ukraine war, trade tariffs (government-imposed import/export duties), elevated inflation and interest rates.
• The total addressable market (TAM) analysis section defines and estimates the market potential compares it with the current market size, and provides strategic insights and growth opportunities based on this evaluation.
• The market attractiveness scoring section evaluates the market based on a quantitative scoring framework that considers growth potential, competitive dynamics, strategic fit, and risk profile. It also provides interpretive insights and strategic implications for decision-makers.
• Market segmentations break down the market into sub markets.
• The regional and country breakdowns section gives an analysis of the market in each geography and the size of the market by geography and compares their historic and forecast growth.
• Expanded geographical coverage includes Taiwan and Southeast Asia, reflecting recent supply chain realignments and manufacturing shifts in the region. This section analyzes how these markets are becoming increasingly important hubs in the global value chain.
• The competitive landscape chapter gives a description of the competitive nature of the market, market shares, and a description of the leading companies. Key financial deals which have shaped the market in recent years are identified.
• The company scoring matrix section evaluates and ranks leading companies based on a multi-parameter framework that includes market share or revenues, product innovation, and brand recognition.

Scope

Markets Covered:1) By Type: Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Modules; Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Discretes

2) By Breakdown Voltage: 650 - 900 Volts; 900 - 1200 Volts; 1200 - 1700 Volts; Above 1700 Volts

3) By Technology: 200 Millimeter (mm) Wafer Technology; 150 Millimeter (mm) Wafer Technology

4) By Application: Power Supplies; Electric Vehicles (EVs); Renewable Energy Systems; Motor Drives; Industrial Equipment

5) By End-Use Industry: Automotive; Industrial; Consumer Electronics; Telecommunications; Other End Use Industries

Subsegments:

1) By Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Modules: Half-Bridge Modules; Full-Bridge Modules; Six-Pack Modules; Buck Or Boost Converter Modules; Power Integrated Modules; Intelligent Power Modules; Custom Power Modules

2) By Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Discretes: N-Channel Metal-Oxide-Semiconductor Field-Effect Transistors; P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors; Enhancement-Mode Metal-Oxide-Semiconductor Field-Effect Transistors; Depletion-Mode Metal-Oxide-Semiconductor Field-Effect Transistors; Low Drain-To-Source On-Resistance Metal-Oxide-Semiconductor Field-Effect Transistors; High-Voltage Metal-Oxide-Semiconductor Field-Effect Transistors; Automotive-Grade Metal-Oxide-Semiconductor Field-Effect Transistors

Companies Mentioned: Mitsubishi Electric Corporation; Toshiba Corporation; Texas Instruments Incorporated; STMicoelectronics N.V.; Infineon Technologies AG; ON Semiconductor Corporation; Fuji Electric Co. Ltd.; Microchip Technology Inc.; Qorvo Inc.; ROHM Co. Ltd.; Vishay Intertechnology Inc.; Littelfuse Inc.; Alpha and Omega Semiconductor; Wolfspeed Inc.; Semikron Danfoss; Sansha Electric Manufacturing Co. Ltd.; Navitas Semiconductor; WeEn Semiconductors; Micro Commercial Components (MCC); Solitron Devices Inc.

Countries: Australia; Brazil; China; France; Germany; India; Indonesia; Japan; Taiwan; Russia; South Korea; UK; USA; Canada; Italy; Spain.

Regions: Asia-Pacific; South East Asia; Western Europe; Eastern Europe; North America; South America; Middle East; Africa

Time Series: Five years historic and ten years forecast.

Data: Ratios of market size and growth to related markets, GDP proportions, expenditure per capita,

Data Segmentations: country and regional historic and forecast data, market share of competitors, market segments.

Sourcing and Referencing: Data and analysis throughout the report is sourced using end notes.

Please Note: Report will be updated with the latest data and delivered to you within 3-5 working days of order. Show more