Global SiC and GaN Power Devices Market Research Report 2025(Status and Outlook)
Description
Report Overview
Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices are wide-bandgap (WBG) semiconductors that offer significant advantages over traditional silicon-based devices, particularly in high-efficiency, high-temperature, and high-voltage applications. SiC power devices are characterized by their high breakdown voltage, superior thermal conductivity, and fast switching capabilities, making them ideal for applications such as electric vehicles (EVs), industrial motors, and high-voltage power supplies. GaN power devices, on the other hand, excel in high-frequency and high-efficiency operations due to their low on-resistance and fast switching performance, which are especially advantageous in data centers, wireless chargers, and power adapters. Together, these devices represent a major technological leap in power electronics by enabling smaller, lighter, and more energy-efficient systems, which are increasingly essential in the global push toward electrification and energy efficiency.
The SiC and GaN power device market reached an estimated valuation of approximately USD 40.18 billion in 2023, driven by rapid adoption in electric vehicles, renewable energy systems, and data center infrastructure. Looking ahead, the market is projected to grow at a robust CAGR of around 6.50% from 2024 to 2033. This substantial growth is underpinned by a combination of technological advances, regulatory support for energy efficiency, and the global electrification trend. In addition, OEMs across various industries are actively shifting from silicon-based solutions to WBG semiconductors to meet higher performance and miniaturization requirements. At the same time, increased investment in 5G networks, artificial intelligence, and industrial automation further propels the demand for high-efficiency power devices.
This report provides a deep insight into the global SiC and GaN Power Devices market covering all its essential aspects. This ranges from a macro overview of the market to micro details of the market size, competitive landscape, development trend, niche market, key market drivers and challenges, SWOT analysis, value chain analysis, etc.
The analysis helps the reader to shape the competition within the industries and strategies for the competitive environment to enhance the potential profit. Furthermore, it provides a simple framework for evaluating and accessing the position of the business organization. The report structure also focuses on the competitive landscape of the Global SiC and GaN Power Devices Market, this report introduces in detail the market share, market performance, product situation, operation situation, etc. of the main players, which helps the readers in the industry to identify the main competitors and deeply understand the competition pattern of the market.
In a word, this report is a must-read for industry players, investors, researchers, consultants, business strategists, and all those who have any kind of stake or are planning to foray into the SiC and GaN Power Devices market in any manner.
Global SiC and GaN Power Devices Market: Market Segmentation Analysis
The research report includes specific segments by region (country), manufacturers, Type, and Application. Market segmentation creates subsets of a market based on product type, end-user or application, Geographic, and other factors. By understanding the market segments, the decision-maker can leverage this targeting in the product, sales, and marketing strategies. Market segments can power your product development cycles by informing how you create product offerings for different segments.
Key Company
Infineon Technologies
ON Semiconductor
STMicroelectronics
Littelfuse
Microsemi
Diodes
ROHM Co., Ltd
Wolfspeed
Navitas Semiconductor
Norstel AB
Texas Instruments
Microchip Technology
Nexperia
Hangzhou Silan Microelectronics Co., Ltd
Zhuzhou CRRC Times Electric Co., Ltd
StarPower Semiconductor Ltd
China Resources Microelectronics Limited
BYD Semiconductor Co., Ltd
Yangzhou Yangjie Electronic Technology Co., Ltd
Wuxi NCE Power Co., Ltd
Jiangsu Jiejie Microelectronics Co., Ltd
Suzhou Oriental Semiconductor Co., Ltd
Macmic Science & Technology Co., Ltd
Suzhou Good-ark Electronics Co., Ltd
Changzhou Galaxy Century Microelectronics Co., Ltd
Power Integrations
ALPHA & OMEGA Semiconductor
Avogy
Cambridge Electronics
Efficient Power Conversion (EPC)
Market Segmentation (by Type)
SiC Power Devices
GaN Power Devices
Market Segmentation (by Application)
Automotive
Industrial
Consumer Electronics
Others
Geographic Segmentation
North America (USA, Canada, Mexico)
Europe (Germany, UK, France, Russia, Italy, Rest of Europe)
Asia-Pacific (China, Japan, South Korea, India, Southeast Asia, Rest of Asia-Pacific)
South America (Brazil, Argentina, Columbia, Rest of South America)
The Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria, South Africa, Rest of MEA)
Key Benefits of This Market Research:
Industry drivers, restraints, and opportunities covered in the study
Neutral perspective on the market performance
Recent industry trends and developments
Competitive landscape & strategies of key players
Potential & niche segments and regions exhibiting promising growth covered
Historical, current, and projected market size, in terms of value
In-depth analysis of the SiC and GaN Power Devices Market
Overview of the regional outlook of the SiC and GaN Power Devices Market:
Chapter Outline
Chapter 1 mainly introduces the statistical scope of the report, market division standards, and market research methods.
Chapter 2 is an executive summary of different market segments (by region, product type, application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the SiC and GaN Power Devices Market and its likely evolution in the short to mid-term, and long term.
Chapter 3 makes a detailed analysis of the market's competitive landscape of the market and provides the market share, capacity, output, price, latest development plan, merger, and acquisition information of the main manufacturers in the market.
Chapter 4 is the analysis of the whole market industrial chain, including the upstream and downstream of the industry, as well as Porter's five forces analysis.
Chapter 5 introduces the latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 6 provides the analysis of various market segments according to product types, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 7 provides the analysis of various market segments according to application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 8 provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and capacity of each country in the world.
Chapter 9 shares the main producing countries of SiC and GaN Power Devices, their output value, profit level, regional supply, production capacity layout, etc. from the supply side.
Chapter 10 introduces the basic situation of the main companies in the market in detail, including product sales revenue, sales volume, price, gross profit margin, market share, product introduction, recent development, etc.
Chapter 11 provides a quantitative analysis of the market size and development potential of each region in the next five years.
Chapter 12 provides a quantitative analysis of the market size and development potential of each market segment in the next five years.
Chapter 13 is the main points and conclusions of the report.
Key Reasons to Buy this Report:
Access to date statistics compiled by our researchers. These provide you with historical and forecast data, which is analyzed to tell you why your market is set to change
This enables you to anticipate market changes to remain ahead of your competitors
You will be able to copy data from the Excel spreadsheet straight into your marketing plans, business presentations, or other strategic documents
The concise analysis, clear graph, and table format will enable you to pinpoint the information you require quickly
Provision of market value data for each segment and sub-segment
Indicates the region and segment that is expected to witness the fastest growth as well as to dominate the market
Analysis by geography highlighting the consumption of the product/service in the region as well as indicating the factors that are affecting the market within each region
Competitive landscape which incorporates the market ranking of the major players, along with new service/product launches, partnerships, business expansions, and acquisitions in the past five years of companies profiled
Extensive company profiles comprising of company overview, company insights, product benchmarking, and SWOT analysis for the major market players
The current as well as the future market outlook of the industry concerning recent developments which involve growth opportunities and drivers as well as challenges and restraints of both emerging as well as developed regions
Includes in-depth analysis of the market from various perspectives through Porter’s five forces analysis
Provides insight into the market through Value Chain
Market dynamics scenario, along with growth opportunities of the market in the years to come
Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices are wide-bandgap (WBG) semiconductors that offer significant advantages over traditional silicon-based devices, particularly in high-efficiency, high-temperature, and high-voltage applications. SiC power devices are characterized by their high breakdown voltage, superior thermal conductivity, and fast switching capabilities, making them ideal for applications such as electric vehicles (EVs), industrial motors, and high-voltage power supplies. GaN power devices, on the other hand, excel in high-frequency and high-efficiency operations due to their low on-resistance and fast switching performance, which are especially advantageous in data centers, wireless chargers, and power adapters. Together, these devices represent a major technological leap in power electronics by enabling smaller, lighter, and more energy-efficient systems, which are increasingly essential in the global push toward electrification and energy efficiency.
The SiC and GaN power device market reached an estimated valuation of approximately USD 40.18 billion in 2023, driven by rapid adoption in electric vehicles, renewable energy systems, and data center infrastructure. Looking ahead, the market is projected to grow at a robust CAGR of around 6.50% from 2024 to 2033. This substantial growth is underpinned by a combination of technological advances, regulatory support for energy efficiency, and the global electrification trend. In addition, OEMs across various industries are actively shifting from silicon-based solutions to WBG semiconductors to meet higher performance and miniaturization requirements. At the same time, increased investment in 5G networks, artificial intelligence, and industrial automation further propels the demand for high-efficiency power devices.
This report provides a deep insight into the global SiC and GaN Power Devices market covering all its essential aspects. This ranges from a macro overview of the market to micro details of the market size, competitive landscape, development trend, niche market, key market drivers and challenges, SWOT analysis, value chain analysis, etc.
The analysis helps the reader to shape the competition within the industries and strategies for the competitive environment to enhance the potential profit. Furthermore, it provides a simple framework for evaluating and accessing the position of the business organization. The report structure also focuses on the competitive landscape of the Global SiC and GaN Power Devices Market, this report introduces in detail the market share, market performance, product situation, operation situation, etc. of the main players, which helps the readers in the industry to identify the main competitors and deeply understand the competition pattern of the market.
In a word, this report is a must-read for industry players, investors, researchers, consultants, business strategists, and all those who have any kind of stake or are planning to foray into the SiC and GaN Power Devices market in any manner.
Global SiC and GaN Power Devices Market: Market Segmentation Analysis
The research report includes specific segments by region (country), manufacturers, Type, and Application. Market segmentation creates subsets of a market based on product type, end-user or application, Geographic, and other factors. By understanding the market segments, the decision-maker can leverage this targeting in the product, sales, and marketing strategies. Market segments can power your product development cycles by informing how you create product offerings for different segments.
Key Company
Infineon Technologies
ON Semiconductor
STMicroelectronics
Littelfuse
Microsemi
Diodes
ROHM Co., Ltd
Wolfspeed
Navitas Semiconductor
Norstel AB
Texas Instruments
Microchip Technology
Nexperia
Hangzhou Silan Microelectronics Co., Ltd
Zhuzhou CRRC Times Electric Co., Ltd
StarPower Semiconductor Ltd
China Resources Microelectronics Limited
BYD Semiconductor Co., Ltd
Yangzhou Yangjie Electronic Technology Co., Ltd
Wuxi NCE Power Co., Ltd
Jiangsu Jiejie Microelectronics Co., Ltd
Suzhou Oriental Semiconductor Co., Ltd
Macmic Science & Technology Co., Ltd
Suzhou Good-ark Electronics Co., Ltd
Changzhou Galaxy Century Microelectronics Co., Ltd
Power Integrations
ALPHA & OMEGA Semiconductor
Avogy
Cambridge Electronics
Efficient Power Conversion (EPC)
Market Segmentation (by Type)
SiC Power Devices
GaN Power Devices
Market Segmentation (by Application)
Automotive
Industrial
Consumer Electronics
Others
Geographic Segmentation
North America (USA, Canada, Mexico)
Europe (Germany, UK, France, Russia, Italy, Rest of Europe)
Asia-Pacific (China, Japan, South Korea, India, Southeast Asia, Rest of Asia-Pacific)
South America (Brazil, Argentina, Columbia, Rest of South America)
The Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria, South Africa, Rest of MEA)
Key Benefits of This Market Research:
Industry drivers, restraints, and opportunities covered in the study
Neutral perspective on the market performance
Recent industry trends and developments
Competitive landscape & strategies of key players
Potential & niche segments and regions exhibiting promising growth covered
Historical, current, and projected market size, in terms of value
In-depth analysis of the SiC and GaN Power Devices Market
Overview of the regional outlook of the SiC and GaN Power Devices Market:
Chapter Outline
Chapter 1 mainly introduces the statistical scope of the report, market division standards, and market research methods.
Chapter 2 is an executive summary of different market segments (by region, product type, application, etc), including the market size of each market segment, future development potential, and so on. It offers a high-level view of the current state of the SiC and GaN Power Devices Market and its likely evolution in the short to mid-term, and long term.
Chapter 3 makes a detailed analysis of the market's competitive landscape of the market and provides the market share, capacity, output, price, latest development plan, merger, and acquisition information of the main manufacturers in the market.
Chapter 4 is the analysis of the whole market industrial chain, including the upstream and downstream of the industry, as well as Porter's five forces analysis.
Chapter 5 introduces the latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 6 provides the analysis of various market segments according to product types, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 7 provides the analysis of various market segments according to application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 8 provides a quantitative analysis of the market size and development potential of each region and its main countries and introduces the market development, future development prospects, market space, and capacity of each country in the world.
Chapter 9 shares the main producing countries of SiC and GaN Power Devices, their output value, profit level, regional supply, production capacity layout, etc. from the supply side.
Chapter 10 introduces the basic situation of the main companies in the market in detail, including product sales revenue, sales volume, price, gross profit margin, market share, product introduction, recent development, etc.
Chapter 11 provides a quantitative analysis of the market size and development potential of each region in the next five years.
Chapter 12 provides a quantitative analysis of the market size and development potential of each market segment in the next five years.
Chapter 13 is the main points and conclusions of the report.
Key Reasons to Buy this Report:
Access to date statistics compiled by our researchers. These provide you with historical and forecast data, which is analyzed to tell you why your market is set to change
This enables you to anticipate market changes to remain ahead of your competitors
You will be able to copy data from the Excel spreadsheet straight into your marketing plans, business presentations, or other strategic documents
The concise analysis, clear graph, and table format will enable you to pinpoint the information you require quickly
Provision of market value data for each segment and sub-segment
Indicates the region and segment that is expected to witness the fastest growth as well as to dominate the market
Analysis by geography highlighting the consumption of the product/service in the region as well as indicating the factors that are affecting the market within each region
Competitive landscape which incorporates the market ranking of the major players, along with new service/product launches, partnerships, business expansions, and acquisitions in the past five years of companies profiled
Extensive company profiles comprising of company overview, company insights, product benchmarking, and SWOT analysis for the major market players
The current as well as the future market outlook of the industry concerning recent developments which involve growth opportunities and drivers as well as challenges and restraints of both emerging as well as developed regions
Includes in-depth analysis of the market from various perspectives through Porter’s five forces analysis
Provides insight into the market through Value Chain
Market dynamics scenario, along with growth opportunities of the market in the years to come
Table of Contents
222 Pages
- 1 Research Methodology and Statistical Scope
- 1.1 Market Definition and Statistical Scope of SiC and GaN Power Devices
- 1.2 Key Market Segments
- 1.2.1 SiC and GaN Power Devices Segment by Type
- 1.2.2 SiC and GaN Power Devices Segment by Application
- 1.3 Methodology & Sources of Information
- 1.3.1 Research Methodology
- 1.3.2 Research Process
- 1.3.3 Market Breakdown and Data Triangulation
- 1.3.4 Base Year
- 1.3.5 Report Assumptions & Caveats
- 2 SiC and GaN Power Devices Market Overview
- 2.1 Global Market Overview
- 2.1.1 Global SiC and GaN Power Devices Market Size (M USD) Estimates and Forecasts (2020-2033)
- 2.1.2 Global SiC and GaN Power Devices Sales Estimates and Forecasts (2020-2033)
- 2.2 Market Segment Executive Summary
- 2.3 Global Market Size by Region
- 3 SiC and GaN Power Devices Market Competitive Landscape
- 3.1 Company Assessment Quadrant
- 3.2 Global SiC and GaN Power Devices Product Life Cycle
- 3.3 Global SiC and GaN Power Devices Sales by Manufacturers (2020-2025)
- 3.4 Global SiC and GaN Power Devices Revenue Market Share by Manufacturers (2020-2025)
- 3.5 SiC and GaN Power Devices Market Share by Company Type (Tier 1, Tier 2, and Tier 3)
- 3.6 Global SiC and GaN Power Devices Average Price by Manufacturers (2020-2025)
- 3.7 Manufacturers’ Manufacturing Sites, Areas Served, and Product Types
- 3.8 SiC and GaN Power Devices Market Competitive Situation and Trends
- 3.8.1 SiC and GaN Power Devices Market Concentration Rate
- 3.8.2 Global 5 and 10 Largest SiC and GaN Power Devices Players Market Share by Revenue
- 3.8.3 Mergers & Acquisitions, Expansion
- 4 SiC and GaN Power Devices Industry Chain Analysis
- 4.1 SiC and GaN Power Devices Industry Chain Analysis
- 4.2 Market Overview of Key Raw Materials
- 4.3 Midstream Market Analysis
- 4.4 Downstream Customer Analysis
- 5 The Development and Dynamics of SiC and GaN Power Devices Market
- 5.1 Key Development Trends
- 5.2 Driving Factors
- 5.3 Market Challenges
- 5.4 Industry News
- 5.4.1 New Product Developments
- 5.4.2 Mergers & Acquisitions
- 5.4.3 Expansions
- 5.4.4 Collaboration/Supply Contracts
- 5.5 PEST Analysis
- 5.5.1 Industry Policies Analysis
- 5.5.2 Economic Environment Analysis
- 5.5.3 Social Environment Analysis
- 5.5.4 Technological Environment Analysis
- 5.6 Global SiC and GaN Power Devices Market Porter's Five Forces Analysis
- 5.6.1 Global Trade Frictions
- 5.6.2 U.S. Tariff Policy – April 2025
- 5.6.3 Global Trade Frictions and Their Impacts to SiC and GaN Power Devices Market
- 5.7 ESG Ratings of Leading Companies
- 6 SiC and GaN Power Devices Market Segmentation by Type
- 6.1 Evaluation Matrix of Segment Market Development Potential (Type)
- 6.2 Global SiC and GaN Power Devices Sales Market Share by Type (2020-2025)
- 6.3 Global SiC and GaN Power Devices Market Size Market Share by Type (2020-2025)
- 6.4 Global SiC and GaN Power Devices Price by Type (2020-2025)
- 7 SiC and GaN Power Devices Market Segmentation by Application
- 7.1 Evaluation Matrix of Segment Market Development Potential (Application)
- 7.2 Global SiC and GaN Power Devices Market Sales by Application (2020-2025)
- 7.3 Global SiC and GaN Power Devices Market Size (M USD) by Application (2020-2025)
- 7.4 Global SiC and GaN Power Devices Sales Growth Rate by Application (2020-2025)
- 8 SiC and GaN Power Devices Market Sales by Region
- 8.1 Global SiC and GaN Power Devices Sales by Region
- 8.1.1 Global SiC and GaN Power Devices Sales by Region
- 8.1.2 Global SiC and GaN Power Devices Sales Market Share by Region
- 8.2 Global SiC and GaN Power Devices Market Size by Region
- 8.2.1 Global SiC and GaN Power Devices Market Size by Region
- 8.2.2 Global SiC and GaN Power Devices Market Size Market Share by Region
- 8.3 North America
- 8.3.1 North America SiC and GaN Power Devices Sales by Country
- 8.3.2 North America SiC and GaN Power Devices Market Size by Country
- 8.3.3 U.S. Market Overview
- 8.3.4 Canada Market Overview
- 8.3.5 Mexico Market Overview
- 8.4 Europe
- 8.4.1 Europe SiC and GaN Power Devices Sales by Country
- 8.4.2 Europe SiC and GaN Power Devices Market Size by Country
- 8.4.3 Germany Market Overview
- 8.4.4 France Market Overview
- 8.4.5 U.K. Market Overview
- 8.4.6 Italy Market Overview
- 8.4.7 Spain Market Overview
- 8.5 Asia Pacific
- 8.5.1 Asia Pacific SiC and GaN Power Devices Sales by Region
- 8.5.2 Asia Pacific SiC and GaN Power Devices Market Size by Region
- 8.5.3 China Market Overview
- 8.5.4 Japan Market Overview
- 8.5.5 South Korea Market Overview
- 8.5.6 India Market Overview
- 8.5.7 Southeast Asia Market Overview
- 8.6 South America
- 8.6.1 South America SiC and GaN Power Devices Sales by Country
- 8.6.2 South America SiC and GaN Power Devices Market Size by Country
- 8.6.3 Brazil Market Overview
- 8.6.4 Argentina Market Overview
- 8.6.5 Columbia Market Overview
- 8.7 Middle East and Africa
- 8.7.1 Middle East and Africa SiC and GaN Power Devices Sales by Region
- 8.7.2 Middle East and Africa SiC and GaN Power Devices Market Size by Region
- 8.7.3 Saudi Arabia Market Overview
- 8.7.4 UAE Market Overview
- 8.7.5 Egypt Market Overview
- 8.7.6 Nigeria Market Overview
- 8.7.7 South Africa Market Overview
- 9 SiC and GaN Power Devices Market Production by Region
- 9.1 Global Production of SiC and GaN Power Devices by Region(2020-2025)
- 9.2 Global SiC and GaN Power Devices Revenue Market Share by Region (2020-2025)
- 9.3 Global SiC and GaN Power Devices Production, Revenue, Price and Gross Margin (2020-2025)
- 9.4 North America SiC and GaN Power Devices Production
- 9.4.1 North America SiC and GaN Power Devices Production Growth Rate (2020-2025)
- 9.4.2 North America SiC and GaN Power Devices Production, Revenue, Price and Gross Margin (2020-2025)
- 9.5 Europe SiC and GaN Power Devices Production
- 9.5.1 Europe SiC and GaN Power Devices Production Growth Rate (2020-2025)
- 9.5.2 Europe SiC and GaN Power Devices Production, Revenue, Price and Gross Margin (2020-2025)
- 9.6 Japan SiC and GaN Power Devices Production (2020-2025)
- 9.6.1 Japan SiC and GaN Power Devices Production Growth Rate (2020-2025)
- 9.6.2 Japan SiC and GaN Power Devices Production, Revenue, Price and Gross Margin (2020-2025)
- 9.7 China SiC and GaN Power Devices Production (2020-2025)
- 9.7.1 China SiC and GaN Power Devices Production Growth Rate (2020-2025)
- 9.7.2 China SiC and GaN Power Devices Production, Revenue, Price and Gross Margin (2020-2025)
- 10 Key Companies Profile
- 10.1 Infineon Technologies
- 10.1.1 Infineon Technologies Basic Information
- 10.1.2 Infineon Technologies SiC and GaN Power Devices Product Overview
- 10.1.3 Infineon Technologies SiC and GaN Power Devices Product Market Performance
- 10.1.4 Infineon Technologies Business Overview
- 10.1.5 Infineon Technologies SWOT Analysis
- 10.1.6 Infineon Technologies Recent Developments
- 10.2 ON Semiconductor
- 10.2.1 ON Semiconductor Basic Information
- 10.2.2 ON Semiconductor SiC and GaN Power Devices Product Overview
- 10.2.3 ON Semiconductor SiC and GaN Power Devices Product Market Performance
- 10.2.4 ON Semiconductor Business Overview
- 10.2.5 ON Semiconductor SWOT Analysis
- 10.2.6 ON Semiconductor Recent Developments
- 10.3 STMicroelectronics
- 10.3.1 STMicroelectronics Basic Information
- 10.3.2 STMicroelectronics SiC and GaN Power Devices Product Overview
- 10.3.3 STMicroelectronics SiC and GaN Power Devices Product Market Performance
- 10.3.4 STMicroelectronics Business Overview
- 10.3.5 STMicroelectronics SWOT Analysis
- 10.3.6 STMicroelectronics Recent Developments
- 10.4 Littelfuse
- 10.4.1 Littelfuse Basic Information
- 10.4.2 Littelfuse SiC and GaN Power Devices Product Overview
- 10.4.3 Littelfuse SiC and GaN Power Devices Product Market Performance
- 10.4.4 Littelfuse Business Overview
- 10.4.5 Littelfuse Recent Developments
- 10.5 Microsemi
- 10.5.1 Microsemi Basic Information
- 10.5.2 Microsemi SiC and GaN Power Devices Product Overview
- 10.5.3 Microsemi SiC and GaN Power Devices Product Market Performance
- 10.5.4 Microsemi Business Overview
- 10.5.5 Microsemi Recent Developments
- 10.6 Diodes
- 10.6.1 Diodes Basic Information
- 10.6.2 Diodes SiC and GaN Power Devices Product Overview
- 10.6.3 Diodes SiC and GaN Power Devices Product Market Performance
- 10.6.4 Diodes Business Overview
- 10.6.5 Diodes Recent Developments
- 10.7 ROHM Co., Ltd
- 10.7.1 ROHM Co., Ltd Basic Information
- 10.7.2 ROHM Co., Ltd SiC and GaN Power Devices Product Overview
- 10.7.3 ROHM Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.7.4 ROHM Co., Ltd Business Overview
- 10.7.5 ROHM Co., Ltd Recent Developments
- 10.8 Wolfspeed
- 10.8.1 Wolfspeed Basic Information
- 10.8.2 Wolfspeed SiC and GaN Power Devices Product Overview
- 10.8.3 Wolfspeed SiC and GaN Power Devices Product Market Performance
- 10.8.4 Wolfspeed Business Overview
- 10.8.5 Wolfspeed Recent Developments
- 10.9 Navitas Semiconductor
- 10.9.1 Navitas Semiconductor Basic Information
- 10.9.2 Navitas Semiconductor SiC and GaN Power Devices Product Overview
- 10.9.3 Navitas Semiconductor SiC and GaN Power Devices Product Market Performance
- 10.9.4 Navitas Semiconductor Business Overview
- 10.9.5 Navitas Semiconductor Recent Developments
- 10.10 Norstel AB
- 10.10.1 Norstel AB Basic Information
- 10.10.2 Norstel AB SiC and GaN Power Devices Product Overview
- 10.10.3 Norstel AB SiC and GaN Power Devices Product Market Performance
- 10.10.4 Norstel AB Business Overview
- 10.10.5 Norstel AB Recent Developments
- 10.11 Texas Instruments
- 10.11.1 Texas Instruments Basic Information
- 10.11.2 Texas Instruments SiC and GaN Power Devices Product Overview
- 10.11.3 Texas Instruments SiC and GaN Power Devices Product Market Performance
- 10.11.4 Texas Instruments Business Overview
- 10.11.5 Texas Instruments Recent Developments
- 10.12 Microchip Technology
- 10.12.1 Microchip Technology Basic Information
- 10.12.2 Microchip Technology SiC and GaN Power Devices Product Overview
- 10.12.3 Microchip Technology SiC and GaN Power Devices Product Market Performance
- 10.12.4 Microchip Technology Business Overview
- 10.12.5 Microchip Technology Recent Developments
- 10.13 Nexperia
- 10.13.1 Nexperia Basic Information
- 10.13.2 Nexperia SiC and GaN Power Devices Product Overview
- 10.13.3 Nexperia SiC and GaN Power Devices Product Market Performance
- 10.13.4 Nexperia Business Overview
- 10.13.5 Nexperia Recent Developments
- 10.14 Hangzhou Silan Microelectronics Co., Ltd
- 10.14.1 Hangzhou Silan Microelectronics Co., Ltd Basic Information
- 10.14.2 Hangzhou Silan Microelectronics Co., Ltd SiC and GaN Power Devices Product Overview
- 10.14.3 Hangzhou Silan Microelectronics Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.14.4 Hangzhou Silan Microelectronics Co., Ltd Business Overview
- 10.14.5 Hangzhou Silan Microelectronics Co., Ltd Recent Developments
- 10.15 Zhuzhou CRRC Times Electric Co., Ltd
- 10.15.1 Zhuzhou CRRC Times Electric Co., Ltd Basic Information
- 10.15.2 Zhuzhou CRRC Times Electric Co., Ltd SiC and GaN Power Devices Product Overview
- 10.15.3 Zhuzhou CRRC Times Electric Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.15.4 Zhuzhou CRRC Times Electric Co., Ltd Business Overview
- 10.15.5 Zhuzhou CRRC Times Electric Co., Ltd Recent Developments
- 10.16 StarPower Semiconductor Ltd
- 10.16.1 StarPower Semiconductor Ltd Basic Information
- 10.16.2 StarPower Semiconductor Ltd SiC and GaN Power Devices Product Overview
- 10.16.3 StarPower Semiconductor Ltd SiC and GaN Power Devices Product Market Performance
- 10.16.4 StarPower Semiconductor Ltd Business Overview
- 10.16.5 StarPower Semiconductor Ltd Recent Developments
- 10.17 China Resources Microelectronics Limited
- 10.17.1 China Resources Microelectronics Limited Basic Information
- 10.17.2 China Resources Microelectronics Limited SiC and GaN Power Devices Product Overview
- 10.17.3 China Resources Microelectronics Limited SiC and GaN Power Devices Product Market Performance
- 10.17.4 China Resources Microelectronics Limited Business Overview
- 10.17.5 China Resources Microelectronics Limited Recent Developments
- 10.18 BYD Semiconductor Co., Ltd
- 10.18.1 BYD Semiconductor Co., Ltd Basic Information
- 10.18.2 BYD Semiconductor Co., Ltd SiC and GaN Power Devices Product Overview
- 10.18.3 BYD Semiconductor Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.18.4 BYD Semiconductor Co., Ltd Business Overview
- 10.18.5 BYD Semiconductor Co., Ltd Recent Developments
- 10.19 Yangzhou Yangjie Electronic Technology Co., Ltd
- 10.19.1 Yangzhou Yangjie Electronic Technology Co., Ltd Basic Information
- 10.19.2 Yangzhou Yangjie Electronic Technology Co., Ltd SiC and GaN Power Devices Product Overview
- 10.19.3 Yangzhou Yangjie Electronic Technology Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.19.4 Yangzhou Yangjie Electronic Technology Co., Ltd Business Overview
- 10.19.5 Yangzhou Yangjie Electronic Technology Co., Ltd Recent Developments
- 10.20 Wuxi NCE Power Co., Ltd
- 10.20.1 Wuxi NCE Power Co., Ltd Basic Information
- 10.20.2 Wuxi NCE Power Co., Ltd SiC and GaN Power Devices Product Overview
- 10.20.3 Wuxi NCE Power Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.20.4 Wuxi NCE Power Co., Ltd Business Overview
- 10.20.5 Wuxi NCE Power Co., Ltd Recent Developments
- 10.21 Jiangsu Jiejie Microelectronics Co., Ltd
- 10.21.1 Jiangsu Jiejie Microelectronics Co., Ltd Basic Information
- 10.21.2 Jiangsu Jiejie Microelectronics Co., Ltd SiC and GaN Power Devices Product Overview
- 10.21.3 Jiangsu Jiejie Microelectronics Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.21.4 Jiangsu Jiejie Microelectronics Co., Ltd Business Overview
- 10.21.5 Jiangsu Jiejie Microelectronics Co., Ltd Recent Developments
- 10.22 Suzhou Oriental Semiconductor Co., Ltd
- 10.22.1 Suzhou Oriental Semiconductor Co., Ltd Basic Information
- 10.22.2 Suzhou Oriental Semiconductor Co., Ltd SiC and GaN Power Devices Product Overview
- 10.22.3 Suzhou Oriental Semiconductor Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.22.4 Suzhou Oriental Semiconductor Co., Ltd Business Overview
- 10.22.5 Suzhou Oriental Semiconductor Co., Ltd Recent Developments
- 10.23 Macmic Science and Technology Co., Ltd
- 10.23.1 Macmic Science and Technology Co., Ltd Basic Information
- 10.23.2 Macmic Science and Technology Co., Ltd SiC and GaN Power Devices Product Overview
- 10.23.3 Macmic Science and Technology Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.23.4 Macmic Science and Technology Co., Ltd Business Overview
- 10.23.5 Macmic Science and Technology Co., Ltd Recent Developments
- 10.24 Suzhou Good-ark Electronics Co., Ltd
- 10.24.1 Suzhou Good-ark Electronics Co., Ltd Basic Information
- 10.24.2 Suzhou Good-ark Electronics Co., Ltd SiC and GaN Power Devices Product Overview
- 10.24.3 Suzhou Good-ark Electronics Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.24.4 Suzhou Good-ark Electronics Co., Ltd Business Overview
- 10.24.5 Suzhou Good-ark Electronics Co., Ltd Recent Developments
- 10.25 Changzhou Galaxy Century Microelectronics Co., Ltd
- 10.25.1 Changzhou Galaxy Century Microelectronics Co., Ltd Basic Information
- 10.25.2 Changzhou Galaxy Century Microelectronics Co., Ltd SiC and GaN Power Devices Product Overview
- 10.25.3 Changzhou Galaxy Century Microelectronics Co., Ltd SiC and GaN Power Devices Product Market Performance
- 10.25.4 Changzhou Galaxy Century Microelectronics Co., Ltd Business Overview
- 10.25.5 Changzhou Galaxy Century Microelectronics Co., Ltd Recent Developments
- 10.26 Power Integrations
- 10.26.1 Power Integrations Basic Information
- 10.26.2 Power Integrations SiC and GaN Power Devices Product Overview
- 10.26.3 Power Integrations SiC and GaN Power Devices Product Market Performance
- 10.26.4 Power Integrations Business Overview
- 10.26.5 Power Integrations Recent Developments
- 10.27 ALPHA and OMEGA Semiconductor
- 10.27.1 ALPHA and OMEGA Semiconductor Basic Information
- 10.27.2 ALPHA and OMEGA Semiconductor SiC and GaN Power Devices Product Overview
- 10.27.3 ALPHA and OMEGA Semiconductor SiC and GaN Power Devices Product Market Performance
- 10.27.4 ALPHA and OMEGA Semiconductor Business Overview
- 10.27.5 ALPHA and OMEGA Semiconductor Recent Developments
- 10.28 Avogy
- 10.28.1 Avogy Basic Information
- 10.28.2 Avogy SiC and GaN Power Devices Product Overview
- 10.28.3 Avogy SiC and GaN Power Devices Product Market Performance
- 10.28.4 Avogy Business Overview
- 10.28.5 Avogy Recent Developments
- 10.29 Cambridge Electronics
- 10.29.1 Cambridge Electronics Basic Information
- 10.29.2 Cambridge Electronics SiC and GaN Power Devices Product Overview
- 10.29.3 Cambridge Electronics SiC and GaN Power Devices Product Market Performance
- 10.29.4 Cambridge Electronics Business Overview
- 10.29.5 Cambridge Electronics Recent Developments
- 10.30 Efficient Power Conversion (EPC)
- 10.30.1 Efficient Power Conversion (EPC) Basic Information
- 10.30.2 Efficient Power Conversion (EPC) SiC and GaN Power Devices Product Overview
- 10.30.3 Efficient Power Conversion (EPC) SiC and GaN Power Devices Product Market Performance
- 10.30.4 Efficient Power Conversion (EPC) Business Overview
- 10.30.5 Efficient Power Conversion (EPC) Recent Developments
- 11 SiC and GaN Power Devices Market Forecast by Region
- 11.1 Global SiC and GaN Power Devices Market Size Forecast
- 11.2 Global SiC and GaN Power Devices Market Forecast by Region
- 11.2.1 North America Market Size Forecast by Country
- 11.2.2 Europe SiC and GaN Power Devices Market Size Forecast by Country
- 11.2.3 Asia Pacific SiC and GaN Power Devices Market Size Forecast by Region
- 11.2.4 South America SiC and GaN Power Devices Market Size Forecast by Country
- 11.2.5 Middle East and Africa Forecasted Sales of SiC and GaN Power Devices by Country
- 12 Forecast Market by Type and by Application (2026-2033)
- 12.1 Global SiC and GaN Power Devices Market Forecast by Type (2026-2033)
- 12.1.1 Global Forecasted Sales of SiC and GaN Power Devices by Type (2026-2033)
- 12.1.2 Global SiC and GaN Power Devices Market Size Forecast by Type (2026-2033)
- 12.1.3 Global Forecasted Price of SiC and GaN Power Devices by Type (2026-2033)
- 12.2 Global SiC and GaN Power Devices Market Forecast by Application (2026-2033)
- 12.2.1 Global SiC and GaN Power Devices Sales (K Units) Forecast by Application
- 12.2.2 Global SiC and GaN Power Devices Market Size (M USD) Forecast by Application (2026-2033)
- 13 Conclusion and Key Findings
Pricing
Currency Rates
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