Global IGBT & Thyristor Market Size, Share & Forecast, by Packaging Type (IGBT Discrete and IGBT Module), by Power Rating (Medium Power IGBT and High Power IGBT), by Voltage (Below 400V and 600-650V), by Application (Power Transmission Systems and Motor D

The Global IGBT & Thyristor Market is valued approximately at USD 6.34 billion in 2024 and is projected to expand at a CAGR of 4.60% over the forecast period of 2025–2035. IGBT (Insulated Gate Bipolar Transistor) and Thyristor technologies represent the backbone of modern power electronics, forming the cornerstone of high-efficiency energy conversion systems used across automotive, industrial, and power transmission sectors. These semiconductors facilitate precise control of electrical power, enabling energy-efficient operations in renewable energy systems, electric vehicles, and motor drives. The global market is experiencing remarkable growth, driven primarily by the accelerating transition toward electrification and the mounting need for efficient power management across industrial ecosystems. Furthermore, the rising integration of renewable power generation sources such as wind and solar into national grids has heightened demand for high-performance switching devices like IGBTs and thyristors that can handle rapid voltage fluctuations and deliver superior efficiency.

As industries continue their digital and energy transitions, the market for IGBT and Thyristor devices is being redefined by continuous advancements in semiconductor design and fabrication technologies. The convergence of high-power electronics with intelligent control systems has resulted in enhanced switching speeds, reduced power losses, and improved thermal stability—making these devices indispensable to next-generation smart grids and transportation systems. According to the International Energy Agency (IEA), global electricity demand is anticipated to surge by over 25% by 2030, propelling the need for efficient transmission infrastructure. In this context, IGBT and Thyristor components play a critical role in stabilizing power flow and minimizing energy dissipation in long-distance transmission. However, the market faces challenges such as high manufacturing costs and complex integration processes in compact electronic modules. Nonetheless, with the rapid evolution of silicon carbide (SiC) and gallium nitride (GaN) technologies, new avenues of innovation and performance enhancement are emerging, paving the way for expanded adoption in both industrial and consumer domains.

The detailed segments and sub-segments included in the report are:

By Packaging Type:
• IGBT Discrete
• IGBT Module

By Power Rating:
• Medium Power IGBT
• High Power IGBT

By Voltage:
• Below 400V
• 600–650V

By Application:
• Power Transmission Systems
• Motor Drives

By Region:

North America
• U.S.
• Canada

Europe
• UK
• Germany
• France
• Spain
• Italy
• Rest of Europe

Asia Pacific
• China
• India
• Japan
• Australia
• South Korea
• Rest of Asia Pacific

Latin America
• Brazil
• Mexico

Middle East & Africa
• UAE
• Saudi Arabia
• South Africa
• Rest of Middle East & Africa

IGBT Module Segment is Expected to Dominate the Market

Among packaging types, the IGBT Module segment is expected to dominate the market throughout the forecast period. IGBT Modules are designed to manage higher power levels, providing excellent thermal conductivity and reliability in demanding industrial conditions. Their modular design allows for compact integration into power systems, supporting applications such as electric locomotives, wind turbines, and industrial motor drives. The ability of IGBT Modules to offer superior switching performance and reduced losses positions them as the preferred choice in large-scale power electronics. Meanwhile, discrete IGBTs continue to hold steady in small- to medium-scale applications, particularly where flexibility and low-cost operation are prioritized. The shift toward high-voltage, compact module-based solutions underscores the growing industrial emphasis on energy efficiency and power density optimization.

Motor Drives Lead in Revenue Contribution

By application, the Motor Drives segment currently generates the highest revenue within the global IGBT & Thyristor market. These components are indispensable in controlling electric motors used across manufacturing, transportation, and energy systems. As industries embrace automation and energy-efficient production systems, the need for reliable and responsive motor control solutions has intensified. IGBT and Thyristor technologies enable precise torque and speed regulation, enhancing performance while curbing energy wastage. Conversely, Power Transmission Systems are projected to witness the fastest growth, driven by the expansion of renewable power generation networks and grid modernization projects. The increasing deployment of smart grids and high-voltage direct current (HVDC) systems globally is accelerating the integration of IGBTs and Thyristors in large-scale power flow management.

The key regions considered for the Global IGBT & Thyristor Market study include North America, Europe, Asia Pacific, Latin America, and the Middle East & Africa. Asia Pacific dominated the market in 2025, accounting for the largest revenue share due to its expanding manufacturing base, surging electric vehicle production, and large-scale renewable energy projects across China, Japan, and India. North America follows closely, driven by strong investments in grid automation, electric mobility infrastructure, and advanced power electronics research. Europe remains a vital market, bolstered by the region’s stringent energy efficiency mandates and emphasis on sustainable transportation systems. Meanwhile, Latin America and the Middle East & Africa are emerging as promising regions, supported by growing electricity demand, industrialization, and infrastructure upgrades aimed at energy diversification.

Major market players included in this report are:
• Infineon Technologies AG
• Mitsubishi Electric Corporation
• ABB Ltd.
• Toshiba Corporation
• Fuji Electric Co., Ltd.
• ON Semiconductor Corporation
• STMicroelectronics N.V.
• Hitachi Energy Ltd.
• ROHM Semiconductor
• Semikron Danfoss
• Vishay Intertechnology Inc.
• Renesas Electronics Corporation
• Littelfuse, Inc.
• NXP Semiconductors N.V.
• Dynex Semiconductor Ltd.

Global IGBT & Thyristor Market Report Scope:
• Historical Data – 2023, 2024
• Base Year for Estimation – 2024
• Forecast period – 2025–2035
• Report Coverage – Revenue forecast, Company Ranking, Competitive Landscape, Growth factors, and Trends
• Regional Scope – North America; Europe; Asia Pacific; Latin America; Middle East & Africa

The objective of the study is to define market sizes of different segments and countries in recent years and to forecast the values for the coming years. The report is designed to incorporate both qualitative and quantitative aspects of the industry within the countries involved in the study. The report also provides detailed information about crucial aspects, such as driving factors and challenges, which will define the future growth of the market. Additionally, it incorporates potential opportunities in micro-markets for stakeholders to invest, along with a detailed analysis of the competitive landscape and product offerings of key players. The detailed segments and sub-segments of the market are explained above.

Key Takeaways:
• Market Estimates & Forecast for 10 years from 2025 to 2035.
• Annualized revenues and regional-level analysis for each market segment.
• Detailed analysis of the geographical landscape with country-level analysis of major regions.
• Competitive landscape with information on major players in the market.
• Analysis of key business strategies and recommendations on future market approach.
• Analysis of the competitive structure of the market.
• Demand side and supply side analysis of the market. Show more