3D NAND Flash Memory Market by Type (Single-Level Cell, Multi-Level Cell, and Triple-Level Cell), Application (Camera, Laptops & PCs, Smartphones & Tablets, and Others), and End User (Automotive, Consumer Electronics, Enterprise, Healthcare, and Others): Global Opportunity Analysis and Industry Forecast, 2021–2030
The global 3D NAND flash memory market size was valued at $12.38 billion in 2020, and is projected to reach $78.42 billion by 2030, registering a CAGR of 20.3% from 2021 to 2030. 3D NAND, also known as vertical NAND, is a form of non-volatile flash memory in which flash memory cells on a transistor die are stacked vertically to increase storage mass.
The growth of the global 3D NAND flash memory market is majorly driven by rise in space constraints on the semiconductor wafer paired with high performance & low latency of 3D NAND flash memory. Moreover, increase in demand for data centres is anticipated to drive the growth of 3D NAND flash memory. However, precision required at the time of manufacturing and high manufacturing cost are acting as a prime restraint of the global 3D NAND flash memory market. On the contrary, rise in penetrations of Internet of Things application is anticipated to provide lucrative opportunities for the 3D NAND flash memory industry during the forecast period.
The 3D NAND flash memory market is segmented on the basis of type, product type, application, and region. The type segment includes single-level cell, multi-level cell, and triple-level cell. By application, the market is classified into camera, laptops & PCs, smartphones & tablets. By end user, it is categorized into automotive, consumer electronics, enterprise, healthcare, and others. Region-wise, the 3D NAND flash memory market trends are analyzed across North America (the U.S., Canada, and Mexico), Europe (the UK, Germany, France, and the rest of the Europe), Asia-Pacific (China, Japan, India, South Korea, and the rest of the Asia-Pacific), and LAMEA (Latin America, the Middle East, and Africa).
The key players operating in the market include 3D NAND flash memory market players, such as Samsung Electronics Co., Ltd., Toshiba Corporation, SK Hynix Semiconductor, Inc., Micron Technology, Inc., Intel Corporation, Apple Inc., Lenovo Group Ltd., Advanced Micro Devices, STMicroelectronics, and SanDisk Corporation.
Key Market Segments
By Type
Single-level Cell
Multi-level Cell
Triple-level Cell
By Product Type
Camera
Laptops and PCs
Smartphones & Tablets
Others
By Application
Automotive
Consumer Electronics
Enterprise
Healthcare
Others
By Region
North America
U.S.
Canada
Mexico
Europe
UK
Germany
France
Rest of Europe
Asia-Pacific
China
Japan
India
South Korea
Rest of Asia-Pacific
LAMEA
Latin America
Middle East
Africa
Key Market Players
Samsung Electronics Co., Ltd.,
Toshiba Corporation
SK Hynix Semiconductor, Inc.
Micron Technology, Inc.,
Intel Corporation
Apple Inc.
Lenovo Group Ltd.,
Advanced Micro Devices
STMicroelectronics
SanDisk Corporation
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