GaN Power Device Market by Device Type (Diodes, Integrated Circuits, Rectifiers), Voltage Ratings (High Voltage (More Than 1200V), Low Voltage (Less Than 600V), Moderate Voltage (600V - 1200V)), Material Type, End-Users - Global Forecast 2025-2032
Description
The GaN Power Device Market was valued at USD 381.18 million in 2024 and is projected to grow to USD 470.76 million in 2025, with a CAGR of 24.98%, reaching USD 2,270.38 million by 2032.
An incisive introduction that frames gallium nitride power devices as a disruptive force reshaping efficiency, miniaturization, and electrification strategies across multiple industries
Gallium nitride (GaN) power devices have emerged as a transformative technology within power electronics, offering material-level advantages that enable higher efficiency, faster switching, and reduced form factors compared with traditional silicon solutions. These intrinsic properties position GaN as an enabling platform for next-generation converters, inverters, and power delivery systems across a diverse set of industries. The reduced switching losses and higher frequency operation translate into tangible system-level benefits, including smaller passive components, lighter thermal management systems, and improved overall energy efficiency.
As commercialization progresses, the GaN landscape is transitioning from early-adopter niche applications toward broader adoption across automotive, data center, industrial, and consumer sectors. This shift is driven by converging trends in electrification, miniaturization, and the decarbonization agenda, which collectively increase the demand for compact, high-efficiency power conversion. From an engineering and procurement perspective, understanding GaN’s design trade-offs-such as reliability considerations under ruggedized use and the implications for packaging and test flows-is essential to unlocking its value. Consequently, stakeholders must integrate technological readiness assessments with supply-chain due diligence to convert GaN’s promise into scalable product platforms.
A strategic overview of the key transformative shifts in GaN power devices driven by substrate advances, packaging innovation, and ecosystem maturation influencing adoption pathways
The GaN power device landscape is undergoing a series of transformative shifts that are redefining technical roadmaps and commercial positioning. First, advancements in wafer-scale processing and epitaxial growth techniques have expanded the practical choices between GaN-on-Silicon and GaN-on-Sapphire substrates, enabling manufacturers to balance cost and performance in novel ways. As production yields improve, the geometry and packaging innovations-such as low-inductance layouts and integrated gate drivers-are accelerating system-level adoption by simplifying integration for power-system designers.
In parallel, the ecosystem of foundries, third-party IP providers, and specialized test houses is maturing, which reduces time-to-market for companies without in-house GaN process capability. This trend fosters a more competitive supplier environment and broadens the pool of potential integrators. Moreover, cross-industry demands-driven by fast-charging for electric vehicles, high-efficiency server power supplies, and compact consumer adapters-are raising functional performance bars and incentivizing closer alignment between device roadmaps and application requirements. Ultimately, these shifts create both opportunities and new imperatives: supply-chain robustness, qualification rigor, and clearer value articulation to system OEMs become critical differentiators.
A rigorous assessment of how United States tariff developments in 2025 are reshaping supply-chain strategies, sourcing decisions, and manufacturing location incentives in the GaN ecosystem
The evolving tariff environment in the United States in 2025 has introduced additional strategic complexity for GaN power device supply chains and commercial decisions. Tariff-related duties and trade restrictions can increase landed costs for components sourced from certain regions, prompting buyers to reassess sourcing strategies, allocate greater budgets to inventory buffer, and accelerate qualification of alternate suppliers. In practice, such adjustments can lengthen procurement cycles and raise the bar for supplier selection, making resilience and geographic diversification essential procurement criteria.
Beyond immediate cost implications, tariffs influence longer-term location decisions for manufacturing investments and partnerships. Some firms may accelerate nearshoring or expand production footprint in tariff-favored jurisdictions to insulate margins, while others may pursue consolidated long-term contracts with tier-one suppliers to stabilize supply and pricing. It is important to note that tariff measures also have secondary effects on research collaborations, capital allocation, and joint-venture structures, as cross-border constraints introduce governance and IP-risk considerations. Consequently, organizations must treat tariff scenarios as a persistent strategic variable-integrating scenario planning into product roadmaps, supplier scorecards, and contractual frameworks to protect timelines and preserve commercial flexibility.
A detailed segmentation insight that connects device types, voltage tiers, substrate choices, and end-user verticals to practical product and commercialization strategies for GaN
Segment-focused clarity is essential for discerning performance expectations and go-to-market priorities in this technology area. When examining device-level distinctions, there is a clear separation between discrete diodes, integrated circuits, rectifiers, and transistors; within diodes, design choices bifurcate into Schottky-type devices and Zener configurations, while rectifier strategies contrast gallium nitride rectifier approaches against legacy silicon rectifier solutions, and transistors are evaluated across high electron mobility transistor architectures and multi-gate transistor topologies. These device-level choices drive electrical characteristics, thermal management needs, and test and qualification pathways.
Voltage profile segmentation further refines application targeting, spanning high-voltage applications above 1200 volts, moderate voltage bands between 600 and 1200 volts, and low-voltage spaces below 600 volts. Material platform decisions also shape cost-performance trade-offs, with GaN-on-Sapphire and GaN-on-Silicon substrates each presenting distinct advantages for yield, thermal conductivity, and cost structure. Finally, understanding end-user domains such as aerospace and defense, automotive, consumer electronics, energy, industrial, and telecommunications allows product teams to tailor reliability regimes, certification processes, and packaging variants. By integrating device type, voltage rating, material selection, and end-user requirements, stakeholders can prioritize development pathways that align with system-level value and commercial readiness.
A comprehensive regional perspective on how Americas, Europe Middle East & Africa, and Asia-Pacific dynamics shape adoption, manufacturing, and qualification strategies for GaN devices
Regional dynamics exert a material influence on supply-chain resilience, design-in cycles, and commercialization strategies for GaN power devices. In the Americas, close proximity to major automotive OEMs and a robust power-systems design community fosters early adoption in EV powertrains and data-center power architectures, while localized manufacturing investments and vertically integrated testing capabilities support rapid qualification for demanding applications. Conversely, Europe, the Middle East & Africa encompass a diverse set of market drivers: European decarbonization policies and strong industrial automation sectors emphasize reliability and regulatory compliance, whereas EMEA’s varied procurement environments require segmented commercial approaches and flexible logistics solutions.
In the Asia-Pacific region, concentration of semiconductor manufacturing, assembly, and supply-chain services creates both advantages and dependencies. The region remains the principal hub for wafer fabs, component integration, and packaging volumes, which accelerates product iteration speed but also heightens exposure to regional policy shifts and logistics disruptions. Taken together, these regional characteristics suggest that successful commercialization strategies will combine localized engagement, multi-region supplier portfolios, and targeted qualification campaigns aligned to the dominant end-user needs within each geography.
An analytical view of competitive strategies, innovation focus, and partnership models that define market leadership and differentiation in GaN power devices
Competitive positioning in the GaN power device space is defined by a combination of technological depth, manufacturing scale, and approaches to ecosystem partnerships. Leading device developers are leveraging differentiated process know-how, vertical integration of package and driver solutions, and strategic alliances with foundries and module makers to accelerate design wins. Some companies emphasize high-frequency performance and reference designs that simplify customer integration, while others prioritize ruggedness and automotive-grade qualification pathways to gain traction in electrified mobility markets.
Beyond product engineering, successful players are investing in comprehensive validation regimes, long-term supply agreements, and co-development initiatives with system OEMs. These tactics reduce friction during qualification and enhance trust where reliability is mission-critical. In addition, a subset of firms pursue an OEM-focused strategy, providing integrated power modules and developer support to shorten time-to-market for customers. Across competitive landscapes, the ability to marry device-level performance with system-level cost improvements and robust post-sale technical support is increasingly the differentiator that determines who secures strategic design wins.
Actionable strategic recommendations for technology, procurement, and partnerships to accelerate GaN adoption while safeguarding supply resilience and product qualification timelines
Industry leaders should adopt a multi-dimensional strategy that balances immediate commercialization needs with long-term technology leadership. First, prioritize qualification efforts in high-value applications where GaN’s efficiency and size advantages translate into clear system-level benefits, thereby accelerating value capture and building reference case momentum. Concurrently, invest in flexible sourcing strategies that combine regional supply partners with contingency capacity to mitigate tariff- and logistics-driven disruptions.
Next, enhance downstream support by providing application-specific reference designs, thermal and reliability data packages, and co-development resources to reduce integration risk for system OEMs. From a product roadmap perspective, concentrate R&D on substrate and packaging innovations that improve thermal performance and manufacturability while striving to lower total cost of ownership. Finally, strengthen commercial relationships through long-term agreements, collaborative qualification timelines, and transparent roadmaps that align device development with customer product cycles. Executed together, these actions create a durable competitive moat and reduce time-to-scale for GaN-enabled systems.
A transparent description of the multi-method research approach combining primary interviews, technical literature synthesis, supplier disclosures, and scenario validation to ensure analytical rigor
The research methodology underpinning this analysis integrated a combination of primary interviews, targeted technical literature review, and cross-validation of supplier and OEM disclosures. Primary engagements included structured interviews with device engineers, procurement leads, and system architects to surface technical pain points, qualification hurdles, and procurement preferences. These conversations were complemented by a systematic review of peer-reviewed materials, conference proceedings, and authoritative technical white papers to confirm device-level performance characteristics and materials science developments.
To ensure rigor, findings were triangulated using supplier roadmaps, public product specifications, and anonymized feedback from end-user integrations. The approach also incorporated scenario analysis to stress-test the implications of tariff shifts, supply disruptions, and rapid scaling of production. Quality controls included interview coding consistency checks, reproducibility testing for technical claims, and an explicit statement of assumptions where data gaps existed. This layered methodology supports a robust, defensible view of technological trajectories and commercial levers within the GaN power device ecosystem.
A concise and forward-looking conclusion that synthesizes the technical promise, commercialization challenges, and strategic priorities required to scale GaN power device adoption
In conclusion, gallium nitride power devices represent a pivotal technology vector for improving energy efficiency, reducing system size, and enabling new power architectures across multiple sectors. The convergence of improved manufacturing processes, richer ecosystem support, and accelerating application demand is driving GaN from niche adoption toward mainstream consideration for high-performance power systems. However, the road to scale is not uniform: device-level choices, voltage tier targeting, substrate selection, and end-user requirements all materially affect commercialization complexity and qualification timelines.
Consequently, organizations that succeed will combine focused technical development with resilient supply strategies and customer-centric deployment models. By aligning R&D priorities to address thermal management, packaging, and reliability, while simultaneously pursuing diversified sourcing and strong OEM partnerships, stakeholders can translate GaN’s technical advantages into durable commercial returns. Continued vigilance around policy shifts, tariff scenarios, and regional manufacturing dynamics will be essential to maintain momentum and protect go-to-market timelines.
Please Note: PDF & Excel + Online Access - 1 Year
An incisive introduction that frames gallium nitride power devices as a disruptive force reshaping efficiency, miniaturization, and electrification strategies across multiple industries
Gallium nitride (GaN) power devices have emerged as a transformative technology within power electronics, offering material-level advantages that enable higher efficiency, faster switching, and reduced form factors compared with traditional silicon solutions. These intrinsic properties position GaN as an enabling platform for next-generation converters, inverters, and power delivery systems across a diverse set of industries. The reduced switching losses and higher frequency operation translate into tangible system-level benefits, including smaller passive components, lighter thermal management systems, and improved overall energy efficiency.
As commercialization progresses, the GaN landscape is transitioning from early-adopter niche applications toward broader adoption across automotive, data center, industrial, and consumer sectors. This shift is driven by converging trends in electrification, miniaturization, and the decarbonization agenda, which collectively increase the demand for compact, high-efficiency power conversion. From an engineering and procurement perspective, understanding GaN’s design trade-offs-such as reliability considerations under ruggedized use and the implications for packaging and test flows-is essential to unlocking its value. Consequently, stakeholders must integrate technological readiness assessments with supply-chain due diligence to convert GaN’s promise into scalable product platforms.
A strategic overview of the key transformative shifts in GaN power devices driven by substrate advances, packaging innovation, and ecosystem maturation influencing adoption pathways
The GaN power device landscape is undergoing a series of transformative shifts that are redefining technical roadmaps and commercial positioning. First, advancements in wafer-scale processing and epitaxial growth techniques have expanded the practical choices between GaN-on-Silicon and GaN-on-Sapphire substrates, enabling manufacturers to balance cost and performance in novel ways. As production yields improve, the geometry and packaging innovations-such as low-inductance layouts and integrated gate drivers-are accelerating system-level adoption by simplifying integration for power-system designers.
In parallel, the ecosystem of foundries, third-party IP providers, and specialized test houses is maturing, which reduces time-to-market for companies without in-house GaN process capability. This trend fosters a more competitive supplier environment and broadens the pool of potential integrators. Moreover, cross-industry demands-driven by fast-charging for electric vehicles, high-efficiency server power supplies, and compact consumer adapters-are raising functional performance bars and incentivizing closer alignment between device roadmaps and application requirements. Ultimately, these shifts create both opportunities and new imperatives: supply-chain robustness, qualification rigor, and clearer value articulation to system OEMs become critical differentiators.
A rigorous assessment of how United States tariff developments in 2025 are reshaping supply-chain strategies, sourcing decisions, and manufacturing location incentives in the GaN ecosystem
The evolving tariff environment in the United States in 2025 has introduced additional strategic complexity for GaN power device supply chains and commercial decisions. Tariff-related duties and trade restrictions can increase landed costs for components sourced from certain regions, prompting buyers to reassess sourcing strategies, allocate greater budgets to inventory buffer, and accelerate qualification of alternate suppliers. In practice, such adjustments can lengthen procurement cycles and raise the bar for supplier selection, making resilience and geographic diversification essential procurement criteria.
Beyond immediate cost implications, tariffs influence longer-term location decisions for manufacturing investments and partnerships. Some firms may accelerate nearshoring or expand production footprint in tariff-favored jurisdictions to insulate margins, while others may pursue consolidated long-term contracts with tier-one suppliers to stabilize supply and pricing. It is important to note that tariff measures also have secondary effects on research collaborations, capital allocation, and joint-venture structures, as cross-border constraints introduce governance and IP-risk considerations. Consequently, organizations must treat tariff scenarios as a persistent strategic variable-integrating scenario planning into product roadmaps, supplier scorecards, and contractual frameworks to protect timelines and preserve commercial flexibility.
A detailed segmentation insight that connects device types, voltage tiers, substrate choices, and end-user verticals to practical product and commercialization strategies for GaN
Segment-focused clarity is essential for discerning performance expectations and go-to-market priorities in this technology area. When examining device-level distinctions, there is a clear separation between discrete diodes, integrated circuits, rectifiers, and transistors; within diodes, design choices bifurcate into Schottky-type devices and Zener configurations, while rectifier strategies contrast gallium nitride rectifier approaches against legacy silicon rectifier solutions, and transistors are evaluated across high electron mobility transistor architectures and multi-gate transistor topologies. These device-level choices drive electrical characteristics, thermal management needs, and test and qualification pathways.
Voltage profile segmentation further refines application targeting, spanning high-voltage applications above 1200 volts, moderate voltage bands between 600 and 1200 volts, and low-voltage spaces below 600 volts. Material platform decisions also shape cost-performance trade-offs, with GaN-on-Sapphire and GaN-on-Silicon substrates each presenting distinct advantages for yield, thermal conductivity, and cost structure. Finally, understanding end-user domains such as aerospace and defense, automotive, consumer electronics, energy, industrial, and telecommunications allows product teams to tailor reliability regimes, certification processes, and packaging variants. By integrating device type, voltage rating, material selection, and end-user requirements, stakeholders can prioritize development pathways that align with system-level value and commercial readiness.
A comprehensive regional perspective on how Americas, Europe Middle East & Africa, and Asia-Pacific dynamics shape adoption, manufacturing, and qualification strategies for GaN devices
Regional dynamics exert a material influence on supply-chain resilience, design-in cycles, and commercialization strategies for GaN power devices. In the Americas, close proximity to major automotive OEMs and a robust power-systems design community fosters early adoption in EV powertrains and data-center power architectures, while localized manufacturing investments and vertically integrated testing capabilities support rapid qualification for demanding applications. Conversely, Europe, the Middle East & Africa encompass a diverse set of market drivers: European decarbonization policies and strong industrial automation sectors emphasize reliability and regulatory compliance, whereas EMEA’s varied procurement environments require segmented commercial approaches and flexible logistics solutions.
In the Asia-Pacific region, concentration of semiconductor manufacturing, assembly, and supply-chain services creates both advantages and dependencies. The region remains the principal hub for wafer fabs, component integration, and packaging volumes, which accelerates product iteration speed but also heightens exposure to regional policy shifts and logistics disruptions. Taken together, these regional characteristics suggest that successful commercialization strategies will combine localized engagement, multi-region supplier portfolios, and targeted qualification campaigns aligned to the dominant end-user needs within each geography.
An analytical view of competitive strategies, innovation focus, and partnership models that define market leadership and differentiation in GaN power devices
Competitive positioning in the GaN power device space is defined by a combination of technological depth, manufacturing scale, and approaches to ecosystem partnerships. Leading device developers are leveraging differentiated process know-how, vertical integration of package and driver solutions, and strategic alliances with foundries and module makers to accelerate design wins. Some companies emphasize high-frequency performance and reference designs that simplify customer integration, while others prioritize ruggedness and automotive-grade qualification pathways to gain traction in electrified mobility markets.
Beyond product engineering, successful players are investing in comprehensive validation regimes, long-term supply agreements, and co-development initiatives with system OEMs. These tactics reduce friction during qualification and enhance trust where reliability is mission-critical. In addition, a subset of firms pursue an OEM-focused strategy, providing integrated power modules and developer support to shorten time-to-market for customers. Across competitive landscapes, the ability to marry device-level performance with system-level cost improvements and robust post-sale technical support is increasingly the differentiator that determines who secures strategic design wins.
Actionable strategic recommendations for technology, procurement, and partnerships to accelerate GaN adoption while safeguarding supply resilience and product qualification timelines
Industry leaders should adopt a multi-dimensional strategy that balances immediate commercialization needs with long-term technology leadership. First, prioritize qualification efforts in high-value applications where GaN’s efficiency and size advantages translate into clear system-level benefits, thereby accelerating value capture and building reference case momentum. Concurrently, invest in flexible sourcing strategies that combine regional supply partners with contingency capacity to mitigate tariff- and logistics-driven disruptions.
Next, enhance downstream support by providing application-specific reference designs, thermal and reliability data packages, and co-development resources to reduce integration risk for system OEMs. From a product roadmap perspective, concentrate R&D on substrate and packaging innovations that improve thermal performance and manufacturability while striving to lower total cost of ownership. Finally, strengthen commercial relationships through long-term agreements, collaborative qualification timelines, and transparent roadmaps that align device development with customer product cycles. Executed together, these actions create a durable competitive moat and reduce time-to-scale for GaN-enabled systems.
A transparent description of the multi-method research approach combining primary interviews, technical literature synthesis, supplier disclosures, and scenario validation to ensure analytical rigor
The research methodology underpinning this analysis integrated a combination of primary interviews, targeted technical literature review, and cross-validation of supplier and OEM disclosures. Primary engagements included structured interviews with device engineers, procurement leads, and system architects to surface technical pain points, qualification hurdles, and procurement preferences. These conversations were complemented by a systematic review of peer-reviewed materials, conference proceedings, and authoritative technical white papers to confirm device-level performance characteristics and materials science developments.
To ensure rigor, findings were triangulated using supplier roadmaps, public product specifications, and anonymized feedback from end-user integrations. The approach also incorporated scenario analysis to stress-test the implications of tariff shifts, supply disruptions, and rapid scaling of production. Quality controls included interview coding consistency checks, reproducibility testing for technical claims, and an explicit statement of assumptions where data gaps existed. This layered methodology supports a robust, defensible view of technological trajectories and commercial levers within the GaN power device ecosystem.
A concise and forward-looking conclusion that synthesizes the technical promise, commercialization challenges, and strategic priorities required to scale GaN power device adoption
In conclusion, gallium nitride power devices represent a pivotal technology vector for improving energy efficiency, reducing system size, and enabling new power architectures across multiple sectors. The convergence of improved manufacturing processes, richer ecosystem support, and accelerating application demand is driving GaN from niche adoption toward mainstream consideration for high-performance power systems. However, the road to scale is not uniform: device-level choices, voltage tier targeting, substrate selection, and end-user requirements all materially affect commercialization complexity and qualification timelines.
Consequently, organizations that succeed will combine focused technical development with resilient supply strategies and customer-centric deployment models. By aligning R&D priorities to address thermal management, packaging, and reliability, while simultaneously pursuing diversified sourcing and strong OEM partnerships, stakeholders can translate GaN’s technical advantages into durable commercial returns. Continued vigilance around policy shifts, tariff scenarios, and regional manufacturing dynamics will be essential to maintain momentum and protect go-to-market timelines.
Please Note: PDF & Excel + Online Access - 1 Year
Table of Contents
197 Pages
- 1. Preface
- 1.1. Objectives of the Study
- 1.2. Market Segmentation & Coverage
- 1.3. Years Considered for the Study
- 1.4. Currency
- 1.5. Language
- 1.6. Stakeholders
- 2. Research Methodology
- 3. Executive Summary
- 4. Market Overview
- 5. Market Insights
- 5.1. Increasing adoption of GaN power amplifiers in 5G infrastructure for enhanced efficiency and power density
- 5.2. Rising integration of GaN devices in electric vehicle charging systems to reduce charging times and system size
- 5.3. Advancements in GaN-on-SiC substrates driving higher thermal performance and reliability in power modules
- 5.4. Growing investment in GaN-based fast chargers for consumer electronics to support rapid charging demands
- 5.5. Emergence of compact GaN power devices in aerospace applications for weight and energy savings at altitude
- 5.6. Development of GaN power transistors for data center power supplies to improve energy efficiency and reduce cooling needs
- 5.7. Strategic partnerships between semiconductor manufacturers and automotive OEMs for GaN adoption in EV powertrains
- 5.8. Progress in wafer-scale testing and defective yield improvement techniques for large-scale GaN production
- 5.9. Expansion of gallium nitride material supply chains to meet surging demand across multiple high-power applications
- 5.10. Regulatory advancements and testing standards for GaN power devices accelerating market entry and certification
- 6. Cumulative Impact of United States Tariffs 2025
- 7. Cumulative Impact of Artificial Intelligence 2025
- 8. GaN Power Device Market, by Device Type
- 8.1. Diodes
- 8.1.1. Schottky Diodes
- 8.1.2. Zener Diodes
- 8.2. Integrated Circuits
- 8.3. Rectifiers
- 8.3.1. Gallium Nitride Rectifiers
- 8.3.2. Silicon Rectifiers
- 8.4. Transistors
- 8.4.1. High Electron Mobility Transistors
- 8.4.2. Multi-Gate Transistors
- 9. GaN Power Device Market, by Voltage Ratings
- 9.1. High Voltage (More Than 1200V)
- 9.2. Low Voltage (Less Than 600V)
- 9.3. Moderate Voltage (600V - 1200V)
- 10. GaN Power Device Market, by Material Type
- 10.1. Gallium Nitride-on-Sapphire
- 10.2. Gallium Nitride-on-Silicon
- 11. GaN Power Device Market, by End-Users
- 11.1. Aerospace & Defense
- 11.2. Automotive
- 11.3. Consumer Electronics
- 11.4. Energy
- 11.5. Industrial
- 11.6. Telecommunications
- 12. GaN Power Device Market, by Region
- 12.1. Americas
- 12.1.1. North America
- 12.1.2. Latin America
- 12.2. Europe, Middle East & Africa
- 12.2.1. Europe
- 12.2.2. Middle East
- 12.2.3. Africa
- 12.3. Asia-Pacific
- 13. GaN Power Device Market, by Group
- 13.1. ASEAN
- 13.2. GCC
- 13.3. European Union
- 13.4. BRICS
- 13.5. G7
- 13.6. NATO
- 14. GaN Power Device Market, by Country
- 14.1. United States
- 14.2. Canada
- 14.3. Mexico
- 14.4. Brazil
- 14.5. United Kingdom
- 14.6. Germany
- 14.7. France
- 14.8. Russia
- 14.9. Italy
- 14.10. Spain
- 14.11. China
- 14.12. India
- 14.13. Japan
- 14.14. Australia
- 14.15. South Korea
- 15. Competitive Landscape
- 15.1. Market Share Analysis, 2024
- 15.2. FPNV Positioning Matrix, 2024
- 15.3. Competitive Analysis
- 15.3.1. AIXTRON SE
- 15.3.2. Analog Devices, Inc.
- 15.3.3. Broadcom Inc.
- 15.3.4. Efficient Power Conversion Corporation
- 15.3.5. GaNPower International Inc.
- 15.3.6. Infineon Technologies AG
- 15.3.7. Infinitum Electric
- 15.3.8. Kemet Corporation
- 15.3.9. MaxLinear, Inc.
- 15.3.10. Microchip Technology Incorporated
- 15.3.11. Mitsubishi Electric Corporation
- 15.3.12. Navitas Semiconductor
- 15.3.13. Nexperia B.V.
- 15.3.14. NXP Semiconductors N.V.
- 15.3.15. ON Semiconductor Corporation
- 15.3.16. Oxford Instruments PLC
- 15.3.17. Qorvo, Inc.
- 15.3.18. Renesas Electronics Corporation
- 15.3.19. ROHM Semiconductor
- 15.3.20. Sanken Electric Co., Ltd.
- 15.3.21. STMicroelectronics N.V.
- 15.3.22. Texas Instruments Incorporated
- 15.3.23. Toshiba Corporation
- 15.3.24. Vishay Intertechnology, Inc.
- 15.3.25. Wolfspeed, Inc.
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